Spatially resolved cathodoluminescence of semiconductors

C. Trager-Cowan; A. Kean; F. Yang; B. Henderson; K. P. O'Donnell

doi:10.1016/0921-4526(93)90254-4

Spatially resolved cathodoluminescence of semiconductors

C. Trager-Cowan^*
, A. Kean
, F. Yang
, B. Henderson
, K. P. O'Donnell

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.

Original language	English
Pages (from-to)	319-324
Number of pages	6
Journal	Physica B: Physics of Condensed Matter
Volume	185
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(93)90254-4
Publication status	Published - 1 Apr 1993

Funding

We would like to thank Khalid Shahzad of Philips Laboratories, North American Philips Corporation for providing the ZnSe epilayer and Deepak Uttamchandani of the Department of Electronic and Electrical Engineering, Strath-Clyde University for providing the porous silicon. We would also like to thank Kathleen Apperson, Vicki Stevenson, Stephen Trotter and David Clark for their work in the laboratory. Finally, we are grateful to Professor E. C. Lightowlers and Dr A. T. Collins of King’s College, London for the loan of the cathodoluminescencsey stem used in this work. C. Trager-Cowan was supported by a SERC Research Fellowship during part of this work.

Keywords

semiconductor materials
quantum wells
porus silicon

Access to Document

10.1016/0921-4526(93)90254-4

Cite this

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title = "Spatially resolved cathodoluminescence of semiconductors",

abstract = "The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.",

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AU - Trager-Cowan, C.

AU - Kean, A.

AU - Yang, F.

AU - Henderson, B.

AU - O'Donnell, K. P.

PY - 1993/4/1

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N2 - The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.

AB - The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.

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KW - porus silicon

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DO - 10.1016/0921-4526(93)90254-4

M3 - Article

AN - SCOPUS:0027579188

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JO - Physica B: Physics of Condensed Matter

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Spatially resolved cathodoluminescence of semiconductors

Abstract

Funding

Keywords

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Pharmaceutical Drying Monitoring using Spatially Offset Raman Spectroscopy: An industrial compound case study for advancing solvent monitoring

Enhancing Pharmaceutical Drying Monitoring Through Depth-Resolved Raman Spectroscopy: A novel Spatially Offset Raman Spectroscopy (SORS) probe for in-line process monitoring

Cite this

Spatially resolved cathodoluminescence of semiconductors

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Activities

Pharmaceutical Drying Monitoring using Spatially Offset Raman Spectroscopy: An industrial compound case study for advancing solvent monitoring

Enhancing Pharmaceutical Drying Monitoring Through Depth-Resolved Raman Spectroscopy: A novel Spatially Offset Raman Spectroscopy (SORS) probe for in-line process monitoring

Cite this