Spatially resolved cathodoluminescence of semiconductors

C. Trager-Cowan, A. Kean, F. Yang, B. Henderson, K. P. O'Donnell

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.

Original languageEnglish
Pages (from-to)319-324
Number of pages6
JournalPhysica B: Physics of Condensed Matter
Volume185
Issue number1-4
DOIs
Publication statusPublished - 1 Apr 1993

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Keywords

  • semiconductor materials
  • quantum wells
  • porus silicon

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