Spatially resolved cathodoluminescence of semiconductors

C. Trager-Cowan; A. Kean; F. Yang; B. Henderson; K. P. O'Donnell

doi:10.1016/0921-4526(93)90254-4

Spatially resolved cathodoluminescence of semiconductors

C. Trager-Cowan^*, A. Kean, F. Yang, B. Henderson, K. P. O'Donnell

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.

Original language	English
Pages (from-to)	319-324
Number of pages	6
Journal	Physica B: Physics of Condensed Matter
Volume	185
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(93)90254-4
Publication status	Published - 1 Apr 1993

Keywords

semiconductor materials
quantum wells
porus silicon

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10.1016/0921-4526(93)90254-4

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title = "Spatially resolved cathodoluminescence of semiconductors",

abstract = "The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.",

keywords = "semiconductor materials, quantum wells, porus silicon",

author = "C. Trager-Cowan and A. Kean and F. Yang and B. Henderson and O'Donnell, {K. P.}",

year = "1993",

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doi = "10.1016/0921-4526(93)90254-4",

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T1 - Spatially resolved cathodoluminescence of semiconductors

AU - Trager-Cowan, C.

AU - Kean, A.

AU - Yang, F.

AU - Henderson, B.

AU - O'Donnell, K. P.

PY - 1993/4/1

Y1 - 1993/4/1

N2 - The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.

AB - The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.

KW - semiconductor materials

KW - quantum wells

KW - porus silicon

UR - http://www.scopus.com/inward/record.url?scp=0027579188&partnerID=8YFLogxK

U2 - 10.1016/0921-4526(93)90254-4

DO - 10.1016/0921-4526(93)90254-4

M3 - Article

AN - SCOPUS:0027579188

SN - 0921-4526

VL - 185

SP - 319

EP - 324

JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

IS - 1-4

ER -

Spatially resolved cathodoluminescence of semiconductors

Abstract

Keywords

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