Spatially resolved cathodoluminescence of semiconductors

C. Trager-Cowan, A. Kean, F. Yang, B. Henderson, K. P. O'Donnell

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.

LanguageEnglish
Pages319-324
Number of pages6
JournalPhysica B: Physics of Condensed Matter
Volume185
Issue number1-4
DOIs
Publication statusPublished - 1 Apr 1993

Fingerprint

Cathodoluminescence
Epilayers
Porous silicon
Silicon
versatility
cathodoluminescence
porous silicon
Semiconductor quantum wells
aluminum gallium arsenides
quantum wells
Semiconductor materials
silicon
gallium arsenide

Keywords

  • semiconductor materials
  • quantum wells
  • porus silicon

Cite this

Trager-Cowan, C. ; Kean, A. ; Yang, F. ; Henderson, B. ; O'Donnell, K. P. / Spatially resolved cathodoluminescence of semiconductors. In: Physica B: Physics of Condensed Matter. 1993 ; Vol. 185, No. 1-4. pp. 319-324.
@article{d7150fe97c2d4dfc8d124f47936327f7,
title = "Spatially resolved cathodoluminescence of semiconductors",
abstract = "The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.",
keywords = "semiconductor materials, quantum wells, porus silicon",
author = "C. Trager-Cowan and A. Kean and F. Yang and B. Henderson and O'Donnell, {K. P.}",
year = "1993",
month = "4",
day = "1",
doi = "10.1016/0921-4526(93)90254-4",
language = "English",
volume = "185",
pages = "319--324",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
number = "1-4",

}

Spatially resolved cathodoluminescence of semiconductors. / Trager-Cowan, C.; Kean, A.; Yang, F.; Henderson, B.; O'Donnell, K. P.

In: Physica B: Physics of Condensed Matter, Vol. 185, No. 1-4, 01.04.1993, p. 319-324.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Spatially resolved cathodoluminescence of semiconductors

AU - Trager-Cowan, C.

AU - Kean, A.

AU - Yang, F.

AU - Henderson, B.

AU - O'Donnell, K. P.

PY - 1993/4/1

Y1 - 1993/4/1

N2 - The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.

AB - The versatility of e-beam characterisation of semiconductor materials is emphasised by describing work on a range of samples: a GaAs-AlGaAs multiple quantum well, a strained ZnSe epilayer, and a porous silicon overlayer on bulk silicon.

KW - semiconductor materials

KW - quantum wells

KW - porus silicon

UR - http://www.scopus.com/inward/record.url?scp=0027579188&partnerID=8YFLogxK

U2 - 10.1016/0921-4526(93)90254-4

DO - 10.1016/0921-4526(93)90254-4

M3 - Article

VL - 185

SP - 319

EP - 324

JO - Physica B: Condensed Matter

T2 - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1-4

ER -