Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N

Gunnar Kusch, M. Nouf-Allehiani, Frank Mehnke, Christian Kuhn, Paul R. Edwards, Tim Wernicke, Arne Knauer, Viola Kueller, G. Naresh-Kumar, Markus Weyers, Michael Kneissl, Carol Trager-Cowan, Robert W. Martin

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A series of Si-doped AlN-rich AlGaN layers with low resistivities was characterized by a combination of nanoscale imaging techniques. Utilizing the capability of scanning electron microscopy to reliably investigate the same sample area with different techniques, it was possible to determine the effect of doping concentration, defect distribution, and morphology on the luminescence properties of these layers. Cathodoluminescence shows that the dominant defect luminescence depends on the Si-doping concentration. For lower doped samples, the most intense peak was centered between 3.36 eV and 3.39 eV, while an additional, stronger peak appears at 3 eV for the highest doped sample. These peaks were attributed to the (VIII-ON)2− complex and the VIII3− vacancy, respectively. Multimode imaging using cathodoluminescence, secondary electrons, electron channeling contrast, and atomic force microscopy demonstrates that the luminescence intensity of these peaks is not homogeneously distributed but shows a strong dependence on the topography and on the distribution of screw dislocations.
LanguageEnglish
Article number072103
Number of pages4
JournalApplied Physics Letters
Volume107
Issue number7
DOIs
Publication statusPublished - 17 Aug 2015

Fingerprint

luminescence
electrical resistivity
defects
cathodoluminescence
screw dislocations
imaging techniques
topography
electrons
atomic force microscopy
scanning electron microscopy

Keywords

  • nanoscale imaging
  • cathodoluminescence
  • multimode imaging

Cite this

Kusch, Gunnar ; Nouf-Allehiani, M. ; Mehnke, Frank ; Kuhn, Christian ; Edwards, Paul R. ; Wernicke, Tim ; Knauer, Arne ; Kueller, Viola ; Naresh-Kumar, G. ; Weyers, Markus ; Kneissl, Michael ; Trager-Cowan, Carol ; Martin, Robert W. / Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N. In: Applied Physics Letters. 2015 ; Vol. 107, No. 7.
@article{ed88f2a9ebf14454bd6e253f2b97ddb4,
title = "Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N",
abstract = "A series of Si-doped AlN-rich AlGaN layers with low resistivities was characterized by a combination of nanoscale imaging techniques. Utilizing the capability of scanning electron microscopy to reliably investigate the same sample area with different techniques, it was possible to determine the effect of doping concentration, defect distribution, and morphology on the luminescence properties of these layers. Cathodoluminescence shows that the dominant defect luminescence depends on the Si-doping concentration. For lower doped samples, the most intense peak was centered between 3.36 eV and 3.39 eV, while an additional, stronger peak appears at 3 eV for the highest doped sample. These peaks were attributed to the (VIII-ON)2− complex and the VIII3− vacancy, respectively. Multimode imaging using cathodoluminescence, secondary electrons, electron channeling contrast, and atomic force microscopy demonstrates that the luminescence intensity of these peaks is not homogeneously distributed but shows a strong dependence on the topography and on the distribution of screw dislocations.",
keywords = "nanoscale imaging, cathodoluminescence, multimode imaging",
author = "Gunnar Kusch and M. Nouf-Allehiani and Frank Mehnke and Christian Kuhn and Edwards, {Paul R.} and Tim Wernicke and Arne Knauer and Viola Kueller and G. Naresh-Kumar and Markus Weyers and Michael Kneissl and Carol Trager-Cowan and Martin, {Robert W.}",
year = "2015",
month = "8",
day = "17",
doi = "10.1063/1.4928667",
language = "English",
volume = "107",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "7",

}

Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N. / Kusch, Gunnar; Nouf-Allehiani, M.; Mehnke, Frank; Kuhn, Christian; Edwards, Paul R.; Wernicke, Tim; Knauer, Arne; Kueller, Viola; Naresh-Kumar, G.; Weyers, Markus; Kneissl, Michael; Trager-Cowan, Carol; Martin, Robert W.

In: Applied Physics Letters, Vol. 107, No. 7, 072103, 17.08.2015.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N

AU - Kusch, Gunnar

AU - Nouf-Allehiani, M.

AU - Mehnke, Frank

AU - Kuhn, Christian

AU - Edwards, Paul R.

AU - Wernicke, Tim

AU - Knauer, Arne

AU - Kueller, Viola

AU - Naresh-Kumar, G.

AU - Weyers, Markus

AU - Kneissl, Michael

AU - Trager-Cowan, Carol

AU - Martin, Robert W.

PY - 2015/8/17

Y1 - 2015/8/17

N2 - A series of Si-doped AlN-rich AlGaN layers with low resistivities was characterized by a combination of nanoscale imaging techniques. Utilizing the capability of scanning electron microscopy to reliably investigate the same sample area with different techniques, it was possible to determine the effect of doping concentration, defect distribution, and morphology on the luminescence properties of these layers. Cathodoluminescence shows that the dominant defect luminescence depends on the Si-doping concentration. For lower doped samples, the most intense peak was centered between 3.36 eV and 3.39 eV, while an additional, stronger peak appears at 3 eV for the highest doped sample. These peaks were attributed to the (VIII-ON)2− complex and the VIII3− vacancy, respectively. Multimode imaging using cathodoluminescence, secondary electrons, electron channeling contrast, and atomic force microscopy demonstrates that the luminescence intensity of these peaks is not homogeneously distributed but shows a strong dependence on the topography and on the distribution of screw dislocations.

AB - A series of Si-doped AlN-rich AlGaN layers with low resistivities was characterized by a combination of nanoscale imaging techniques. Utilizing the capability of scanning electron microscopy to reliably investigate the same sample area with different techniques, it was possible to determine the effect of doping concentration, defect distribution, and morphology on the luminescence properties of these layers. Cathodoluminescence shows that the dominant defect luminescence depends on the Si-doping concentration. For lower doped samples, the most intense peak was centered between 3.36 eV and 3.39 eV, while an additional, stronger peak appears at 3 eV for the highest doped sample. These peaks were attributed to the (VIII-ON)2− complex and the VIII3− vacancy, respectively. Multimode imaging using cathodoluminescence, secondary electrons, electron channeling contrast, and atomic force microscopy demonstrates that the luminescence intensity of these peaks is not homogeneously distributed but shows a strong dependence on the topography and on the distribution of screw dislocations.

KW - nanoscale imaging

KW - cathodoluminescence

KW - multimode imaging

U2 - 10.1063/1.4928667

DO - 10.1063/1.4928667

M3 - Article

VL - 107

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 072103

ER -