Abstract
| Original language | English |
|---|---|
| Article number | 044512 |
| Number of pages | 6 |
| Journal | Journal of Applied Physics |
| Volume | 116 |
| Issue number | 4 |
| Early online date | 29 Jul 2014 |
| DOIs | |
| Publication status | Published - 2014 |
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Keywords
- light emitting diode
- charge injection
- gold
Cite this
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Size-dependent capacitance study on InGaN-based micro-light-emitting diodes. / Yang, Wei; Zhang, Shuailong; McKendry, Jonathan; Herrnsdorf, Johannes; Tian, Pengfei; Gong, Zheng; Ji, Qingbin; Watson, Ian; Gu, Erdan; Dawson, Martin; Feng, Liefeng; Wang, Cunda; Hu, Xiaodong.
In: Journal of Applied Physics, Vol. 116, No. 4, 044512, 2014.Research output: Contribution to journal › Article
TY - JOUR
T1 - Size-dependent capacitance study on InGaN-based micro-light-emitting diodes
AU - Yang, Wei
AU - Zhang, Shuailong
AU - McKendry, Jonathan
AU - Herrnsdorf, Johannes
AU - Tian, Pengfei
AU - Gong, Zheng
AU - Ji, Qingbin
AU - Watson, Ian
AU - Gu, Erdan
AU - Dawson, Martin
AU - Feng, Liefeng
AU - Wang, Cunda
AU - Hu, Xiaodong
PY - 2014
Y1 - 2014
N2 - We report a detailed study on size-dependent capacitance, especially the negative capacitance (NC), in InGaN-based micro-pixelated light-emitting diodes (μLEDs). Similar to conventional broad-area LEDs, μLEDs show NC under large forward bias. In the conventional depletion and diffusion capacitance regimes, a good linear relationship of capacitance with device size is observed. However, the NC under high forward bias shows slight deviation from above-mentioned linear relationship with device size. This behaviour can be understood if the effects of current density and junction temperature on NC are considered. The measured temperature dependence and frequency dispersion of the capacitance underpin this point of view. The NCs of two reference broad-area LEDs were also measured and compared with that of μLED clusters with the same total size. A stronger NC effect is observed in the μLED clusters, which is attributed to the increased number of sidewall defects during fabrication process.
AB - We report a detailed study on size-dependent capacitance, especially the negative capacitance (NC), in InGaN-based micro-pixelated light-emitting diodes (μLEDs). Similar to conventional broad-area LEDs, μLEDs show NC under large forward bias. In the conventional depletion and diffusion capacitance regimes, a good linear relationship of capacitance with device size is observed. However, the NC under high forward bias shows slight deviation from above-mentioned linear relationship with device size. This behaviour can be understood if the effects of current density and junction temperature on NC are considered. The measured temperature dependence and frequency dispersion of the capacitance underpin this point of view. The NCs of two reference broad-area LEDs were also measured and compared with that of μLED clusters with the same total size. A stronger NC effect is observed in the μLED clusters, which is attributed to the increased number of sidewall defects during fabrication process.
KW - light emitting diode
KW - charge injection
KW - gold
UR - http://scitation.aip.org/content/aip/journal/jap
U2 - 10.1063/1.4891233
DO - 10.1063/1.4891233
M3 - Article
VL - 116
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 4
M1 - 044512
ER -