Site multiplicity of rare earth ions in III-nitrides

K. P. O'Donnell, V. Katchkanov, K. Wang, R. W. Martin, P. R. Edwards, B. Hourahine, E. Nogales, J. F.W. Mosselmans, B. De Vries

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


This presentation reviews recent lattice location studies of rare earth (RE) ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the well-documented richness of optical spectra of GaN:RE 3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the RE Ga defect.

Original languageEnglish
Article numberE9.6
Pages (from-to)527-536
Number of pages10
JournalMaterials Research Society Symposium Proceedings
Publication statusPublished - 25 Aug 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: 29 Nov 20043 Dec 2004


  • rare earth (RE) ions
  • lattice location studies
  • lectron emission channelling (EC)
  • X-ray absorption fine structure (XAFS) techniques


Dive into the research topics of 'Site multiplicity of rare earth ions in III-nitrides'. Together they form a unique fingerprint.

Cite this