Site multiplicity of rare earth ions in III-nitrides

K.P. O'Donnell, V. Katchkanov, K. Wang, R.W. Martin, B. Hourahine, P.R. Edwards, E. Nogales, J.F.W. Mosselmans, B. De-Vries

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Abstract

This presentation reviews recent lattice location studies of RE ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the welldocumented richness of optical spectra of GaN:RE3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the REGa defect.
Original languageEnglish
Pages (from-to)527-535
Number of pages9
JournalMRS Online Proceedings Library
Volume831
DOIs
Publication statusPublished - 3 Dec 2004
EventSymposium on GaN, AIN, InN and Their Alloys held at the 2004 MRS Fall Meeting - Boston, United States
Duration: 29 Nov 20043 Dec 2004

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Nitrides
Rare earths
nitrides
rare earth elements
Ions
Electron emission
X ray absorption
Ion implantation
electron emission
equivalence
ion implantation
optical spectrum
Luminescence
low concentrations
ions
fine structure
luminescence
Defects
defects
x rays

Keywords

  • site multiplicity
  • rare earth ions
  • III-nitrides
  • nanoscience

Cite this

O'Donnell, K.P. ; Katchkanov, V. ; Wang, K. ; Martin, R.W. ; Hourahine, B. ; Edwards, P.R. ; Nogales, E. ; Mosselmans, J.F.W. ; De-Vries, B. / Site multiplicity of rare earth ions in III-nitrides. In: MRS Online Proceedings Library . 2004 ; Vol. 831. pp. 527-535.
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Site multiplicity of rare earth ions in III-nitrides. / O'Donnell, K.P.; Katchkanov, V.; Wang, K.; Martin, R.W.; Hourahine, B.; Edwards, P.R.; Nogales, E.; Mosselmans, J.F.W.; De-Vries, B.

In: MRS Online Proceedings Library , Vol. 831, 03.12.2004, p. 527-535.

Research output: Contribution to journalArticle

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T1 - Site multiplicity of rare earth ions in III-nitrides

AU - O'Donnell, K.P.

AU - Katchkanov, V.

AU - Wang, K.

AU - Martin, R.W.

AU - Hourahine, B.

AU - Edwards, P.R.

AU - Nogales, E.

AU - Mosselmans, J.F.W.

AU - De-Vries, B.

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AB - This presentation reviews recent lattice location studies of RE ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the welldocumented richness of optical spectra of GaN:RE3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the REGa defect.

KW - site multiplicity

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