This presentation reviews recent lattice location studies of RE ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the welldocumented richness of optical spectra of GaN:RE3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the REGa defect.
|Number of pages||9|
|Journal||MRS Online Proceedings Library|
|Publication status||Published - 3 Dec 2004|
|Event||Symposium on GaN, AIN, InN and Their Alloys held at the 2004 MRS Fall Meeting - Boston, United States|
Duration: 29 Nov 2004 → 3 Dec 2004
- site multiplicity
- rare earth ions