Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal β-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). β-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp3- sp2 order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.
|Title of host publication||Key Engineering Materials|
|Place of Publication||Durnten-Zurich, Switzerland|
|Number of pages||6|
|Publication status||Published - Dec 2011|
- β-Silicon Carbide (Cubic)
- molecular dynamical simulations
- single point diamond turning