Single point diamond turning of single crystal silicon carbide: molecular dynamic simulation study

S. Goel, X. Luo, R.L. Reuben, W.B. Rashid, J. Sun

Research output: Chapter in Book/Report/Conference proceedingChapter

10 Citations (Scopus)

Abstract

Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal β-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). β-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp3- sp2 order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.
Original languageEnglish
Title of host publicationKey Engineering Materials
Place of PublicationDurnten-Zurich, Switzerland
Pages150-155
Number of pages6
Volume496
DOIs
Publication statusPublished - Dec 2011

Keywords

  • β-Silicon Carbide (Cubic)
  • molecular dynamical simulations
  • single point diamond turning

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    Goel, S., Luo, X., Reuben, R. L., Rashid, W. B., & Sun, J. (2011). Single point diamond turning of single crystal silicon carbide: molecular dynamic simulation study. In Key Engineering Materials (Vol. 496, pp. 150-155). https://doi.org/10.4028/www.scientific.net/KEM.496.150