Simultaneous improved performance and thermal stability of planar metal ion incorporated CsPbI2Br all-inorganic perovskite solar cells based on MgZnO nanocrystalline electron transporting layer

Sawanta S. Mali; Jyoti V. Patil; Chang Kook Hong

doi:10.1002/aenm.201902708

Simultaneous improved performance and thermal stability of planar metal ion incorporated CsPbI₂Br all-inorganic perovskite solar cells based on MgZnO nanocrystalline electron transporting layer

Sawanta S. Mali^*, Jyoti V. Patil, Chang Kook Hong

^*Corresponding author for this work

Pure And Applied Chemistry

Research output: Contribution to journal › Article › peer-review

70 Citations (Scopus)

Abstract

The high thermal stability and facile synthesis of CsPbI₂Br all-inorganic perovskite solar cells (AI-PSCs) have attracted tremendous attention. As far as electron-transporting layers (ETLs) are concerned, low temperature processing and reduced interfacial recombination centers through tunable energy levels determine the feasibility of the perovskite devices. Although the TiO₂ is the most popular ETL used in PSCs, its processing temperature and moderate electron mobility hamper the performance and feasibility. Herein, the highly stable, low-temperature processed MgZnO nanocrystal-based ETLs for dynamic hot-air processed Mn²⁺ incorporated CsPbI2Br AI-PSCs are reported. By holding its regular planar “n–i–p” type device architecture, the MgZnO ETL and poly(3-hexylthiophene-2,5-diyl) hole transporting layer, 15.52% power conversion efficiency (PCE) is demonstrated. The thermal-stability analysis reveals that the conventional ZnO ETL-based AI-PSCs show a serious instability and poor efficiency than the Mg²⁺ modified MgZnO ETLs. The photovoltaic and stability analysis of this improved photovoltaic performance is attributed to the suitable wide-bandgap, low ETL/perovskite interface recombination, and interface stability by Mg²⁺ doping. Interestingly, the thermal stability analysis of the unencapsulated AI-PSCs maintains >95% of initial PCE more than 400 h at 85 °C for MgZnO ETL, revealing the suitability against thermal degradation than conventional ZnO ETL.

Original language	English
Article number	1902708
Number of pages	13
Journal	Advanced Energy Materials
Volume	10
Issue number	3
Early online date	2 Dec 2019
DOIs	https://doi.org/10.1002/aenm.201902708
Publication status	Published - 21 Jan 2020

Funding

This work was supported by Korea Research Fellowship Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2016H1D3A1909289) for an outstanding overseas young researcher. This research was also supported by the National Research Foundation of Korea (NRF) (NRF-2017R1A2B4008117). This work was also supported by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2018R1A6A1A03024334). This work was also supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (2018R1C1B6008218). S.S.M. and C.K.H. contributed to the conception and design of the experiments. S.S.M. fabricated all the devices and conducted most of the characterizations. S.S.M. and J.V.P. measured the EQE and UV–vis spectra. S.S.M. and C.K.H. wrote the paper. All authors discussed the results and reviewed the manuscript.

Keywords

degradation
MgZnO electron transporting layer
Mn incorporated CsPbIBr

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1002/aenm.201902708

Cite this

@article{ccd43df12be448a29abcd745a4f0e8f5,

title = "Simultaneous improved performance and thermal stability of planar metal ion incorporated CsPbI2Br all-inorganic perovskite solar cells based on MgZnO nanocrystalline electron transporting layer",

abstract = "The high thermal stability and facile synthesis of CsPbI2Br all-inorganic perovskite solar cells (AI-PSCs) have attracted tremendous attention. As far as electron-transporting layers (ETLs) are concerned, low temperature processing and reduced interfacial recombination centers through tunable energy levels determine the feasibility of the perovskite devices. Although the TiO2 is the most popular ETL used in PSCs, its processing temperature and moderate electron mobility hamper the performance and feasibility. Herein, the highly stable, low-temperature processed MgZnO nanocrystal-based ETLs for dynamic hot-air processed Mn2+ incorporated CsPbI2Br AI-PSCs are reported. By holding its regular planar “n–i–p” type device architecture, the MgZnO ETL and poly(3-hexylthiophene-2,5-diyl) hole transporting layer, 15.52% power conversion efficiency (PCE) is demonstrated. The thermal-stability analysis reveals that the conventional ZnO ETL-based AI-PSCs show a serious instability and poor efficiency than the Mg2+ modified MgZnO ETLs. The photovoltaic and stability analysis of this improved photovoltaic performance is attributed to the suitable wide-bandgap, low ETL/perovskite interface recombination, and interface stability by Mg2+ doping. Interestingly, the thermal stability analysis of the unencapsulated AI-PSCs maintains >95% of initial PCE more than 400 h at 85 °C for MgZnO ETL, revealing the suitability against thermal degradation than conventional ZnO ETL.",

keywords = "degradation, MgZnO electron transporting layer, Mn incorporated CsPbIBr",

author = "Mali, {Sawanta S.} and Patil, {Jyoti V.} and Hong, {Chang Kook}",

year = "2020",

month = jan,

day = "21",

doi = "10.1002/aenm.201902708",

language = "English",

volume = "10",

journal = "Advanced Energy Materials",

issn = "1614-6832",

publisher = "John Wiley and Sons Inc.",

number = "3",

}

Simultaneous improved performance and thermal stability of planar metal ion incorporated CsPbI₂Br all-inorganic perovskite solar cells based on MgZnO nanocrystalline electron transporting layer. / Mali, Sawanta S.; Patil, Jyoti V.; Hong, Chang Kook.
In: Advanced Energy Materials, Vol. 10, No. 3, 1902708, 21.01.2020.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Simultaneous improved performance and thermal stability of planar metal ion incorporated CsPbI2Br all-inorganic perovskite solar cells based on MgZnO nanocrystalline electron transporting layer

AU - Mali, Sawanta S.

AU - Patil, Jyoti V.

AU - Hong, Chang Kook

PY - 2020/1/21

Y1 - 2020/1/21

N2 - The high thermal stability and facile synthesis of CsPbI2Br all-inorganic perovskite solar cells (AI-PSCs) have attracted tremendous attention. As far as electron-transporting layers (ETLs) are concerned, low temperature processing and reduced interfacial recombination centers through tunable energy levels determine the feasibility of the perovskite devices. Although the TiO2 is the most popular ETL used in PSCs, its processing temperature and moderate electron mobility hamper the performance and feasibility. Herein, the highly stable, low-temperature processed MgZnO nanocrystal-based ETLs for dynamic hot-air processed Mn2+ incorporated CsPbI2Br AI-PSCs are reported. By holding its regular planar “n–i–p” type device architecture, the MgZnO ETL and poly(3-hexylthiophene-2,5-diyl) hole transporting layer, 15.52% power conversion efficiency (PCE) is demonstrated. The thermal-stability analysis reveals that the conventional ZnO ETL-based AI-PSCs show a serious instability and poor efficiency than the Mg2+ modified MgZnO ETLs. The photovoltaic and stability analysis of this improved photovoltaic performance is attributed to the suitable wide-bandgap, low ETL/perovskite interface recombination, and interface stability by Mg2+ doping. Interestingly, the thermal stability analysis of the unencapsulated AI-PSCs maintains >95% of initial PCE more than 400 h at 85 °C for MgZnO ETL, revealing the suitability against thermal degradation than conventional ZnO ETL.

AB - The high thermal stability and facile synthesis of CsPbI2Br all-inorganic perovskite solar cells (AI-PSCs) have attracted tremendous attention. As far as electron-transporting layers (ETLs) are concerned, low temperature processing and reduced interfacial recombination centers through tunable energy levels determine the feasibility of the perovskite devices. Although the TiO2 is the most popular ETL used in PSCs, its processing temperature and moderate electron mobility hamper the performance and feasibility. Herein, the highly stable, low-temperature processed MgZnO nanocrystal-based ETLs for dynamic hot-air processed Mn2+ incorporated CsPbI2Br AI-PSCs are reported. By holding its regular planar “n–i–p” type device architecture, the MgZnO ETL and poly(3-hexylthiophene-2,5-diyl) hole transporting layer, 15.52% power conversion efficiency (PCE) is demonstrated. The thermal-stability analysis reveals that the conventional ZnO ETL-based AI-PSCs show a serious instability and poor efficiency than the Mg2+ modified MgZnO ETLs. The photovoltaic and stability analysis of this improved photovoltaic performance is attributed to the suitable wide-bandgap, low ETL/perovskite interface recombination, and interface stability by Mg2+ doping. Interestingly, the thermal stability analysis of the unencapsulated AI-PSCs maintains >95% of initial PCE more than 400 h at 85 °C for MgZnO ETL, revealing the suitability against thermal degradation than conventional ZnO ETL.

KW - degradation

KW - MgZnO electron transporting layer

KW - Mn incorporated CsPbIBr

U2 - 10.1002/aenm.201902708

DO - 10.1002/aenm.201902708

M3 - Article

AN - SCOPUS:85076166835

SN - 1614-6832

VL - 10

JO - Advanced Energy Materials

JF - Advanced Energy Materials

IS - 3

M1 - 1902708

ER -