Abstract
Gallium nitride based structures have been characterised using the novel approach of simultaneous wavelength-dispersive X-ray microanalysis and cathodoluminescence spectral mapping. Details are presented of the instrumentation developed to carry out such measurements. Application of the technique to MOVPE-grown indium gallium nitride epilayers shows microscopic variations in the indium content, which correlate directly with spatially-dependent shifts observed in the peak wavelength of the luminescence spectrum. Regions of higher indium content are shown to emit at lower energy, mirroring equivalent macroscopic observations.
| Original language | English |
|---|---|
| Pages (from-to) | 293-296 |
| Number of pages | 4 |
| Journal | Design and Nature |
| Volume | 6 |
| Publication status | Published - 17 Nov 2004 |
| Event | Design and Nature II: Comparing Design in Nature with Science and Engineering - Rhodes, Greece Duration: 28 Jun 2004 → 30 Jun 2004 |
Keywords
- electron probe microanalyzers (EPMA)
- emission energy
- spatial resolution
- X-ray microanalysis
- Gallium nitride
- semiconductor quantum dots
- cathodoluminescence
- electroluminescence
- microanalysis