Simulation study of cutting forces, stresses and temperature during nanometric cutting of single crystal silicon

S. Goel, X. Luo, R.L. Reuben, W. Bin Rashid, J. N. Sun

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

Wear of diamond tool has always been a limiting factor in ductile regime machining of large size silicon components. In order to understand the tool wear phenomena, it is non-trivial to know the process outputs especially cutting forces, stresses and temperature during nanometric turning. In this paper, a realistic potential energy function has been deployed through molecular dynamic (MD) simulation, to simulate the process outputs of single diamond turning operation against single crystal silicon. The simulation result suggests that wear mechanism of diamond tool is fundamentally governed by these process parameters and thus critical.
LanguageEnglish
Title of host publicationKey Engineering Materials
Place of PublicationDurnten-Zurich, Switzerland
Pages223-228
Number of pages6
Volume496
DOIs
Publication statusPublished - 1 Dec 2011

Fingerprint

Diamonds
Wear of materials
Single crystals
Silicon
Potential energy functions
Temperature
Molecular dynamics
Machining
Computer simulation

Keywords

  • molecular dynamic simulation
  • single crystal silicon
  • single point diamond turning

Cite this

Goel, S., Luo, X., Reuben, R. L., Rashid, W. B., & Sun, J. N. (2011). Simulation study of cutting forces, stresses and temperature during nanometric cutting of single crystal silicon. In Key Engineering Materials (Vol. 496, pp. 223-228). Durnten-Zurich, Switzerland. https://doi.org/10.4028/www.scientific.net/KEM.496.223
Goel, S. ; Luo, X. ; Reuben, R.L. ; Rashid, W. Bin ; Sun, J. N. / Simulation study of cutting forces, stresses and temperature during nanometric cutting of single crystal silicon. Key Engineering Materials. Vol. 496 Durnten-Zurich, Switzerland, 2011. pp. 223-228
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Goel, S, Luo, X, Reuben, RL, Rashid, WB & Sun, JN 2011, Simulation study of cutting forces, stresses and temperature during nanometric cutting of single crystal silicon. in Key Engineering Materials. vol. 496, Durnten-Zurich, Switzerland, pp. 223-228. https://doi.org/10.4028/www.scientific.net/KEM.496.223

Simulation study of cutting forces, stresses and temperature during nanometric cutting of single crystal silicon. / Goel, S.; Luo, X.; Reuben, R.L.; Rashid, W. Bin; Sun, J. N.

Key Engineering Materials. Vol. 496 Durnten-Zurich, Switzerland, 2011. p. 223-228.

Research output: Chapter in Book/Report/Conference proceedingChapter

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T1 - Simulation study of cutting forces, stresses and temperature during nanometric cutting of single crystal silicon

AU - Goel, S.

AU - Luo, X.

AU - Reuben, R.L.

AU - Rashid, W. Bin

AU - Sun, J. N.

PY - 2011/12/1

Y1 - 2011/12/1

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Goel S, Luo X, Reuben RL, Rashid WB, Sun JN. Simulation study of cutting forces, stresses and temperature during nanometric cutting of single crystal silicon. In Key Engineering Materials. Vol. 496. Durnten-Zurich, Switzerland. 2011. p. 223-228 https://doi.org/10.4028/www.scientific.net/KEM.496.223