Simulation Research on FIB Processing: a comparison between silicon and diamond

Z. Tong, X. C. Luo, Y. C. Liang, Q. S. Bai, J. N. Sun

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

2 Citations (Scopus)

Abstract

The interactions between energetic gallium ion with silicon and diamond have been studied using Large-Scale Molecular Dynamics simulation method. In order to reveal the dependence of implantation depth and damage upon the beam voltage, a serial of simulations have been performed under impact energy of 2, 5, 8, 12, and 16 kev respectively for the Ga ions. The results indicate that both the normalized implantation depth D and the peak temperature (Tmax) during the collision process are increased with the increase of the impact beam voltage. With the same lattice crystal structure and collision energy, the silicon contains a higher Tmax and a smaller D compared with diamond under all impact energy tested. Further damage evolution analysis and lattice structure changes reflected by radius distribution function (RDF) indicate that the damage of silicon caused by ion bombardment is worse than diamond, which is mainly related to the higher collision temperature and lateral recrystallization process.
LanguageEnglish
Title of host publicationAutomation and Computing (ICAC), 2012 18th International Conference on
PublisherIEEE
Number of pages5
ISBN (Electronic)9781908549006
ISBN (Print)9781467317221
Publication statusPublished - 15 Oct 2012
EventIEEE 18th International Conference on Automation & Computing, Loughborough - Loughborough University, Loughborough, United Kingdom
Duration: 7 Sep 20128 Sep 2012

Conference

ConferenceIEEE 18th International Conference on Automation & Computing, Loughborough
CountryUnited Kingdom
CityLoughborough
Period7/09/128/09/12

Fingerprint

Diamonds
Silicon
Processing
Ions
Electric potential
Gallium
Ion bombardment
Crystal lattices
Distribution functions
Molecular dynamics
Crystal structure
Temperature
Computer simulation

Keywords

  • diamond
  • ion collision
  • molecular dynamic
  • silicon
  • gallium
  • computational modelling
  • ion beams
  • lattices

Cite this

Tong, Z., Luo, X. C., Liang, Y. C., Bai, Q. S., & Sun, J. N. (2012). Simulation Research on FIB Processing: a comparison between silicon and diamond. In Automation and Computing (ICAC), 2012 18th International Conference on IEEE.
Tong, Z. ; Luo, X. C. ; Liang, Y. C. ; Bai, Q. S. ; Sun, J. N. / Simulation Research on FIB Processing: a comparison between silicon and diamond. Automation and Computing (ICAC), 2012 18th International Conference on. IEEE, 2012.
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title = "Simulation Research on FIB Processing: a comparison between silicon and diamond",
abstract = "The interactions between energetic gallium ion with silicon and diamond have been studied using Large-Scale Molecular Dynamics simulation method. In order to reveal the dependence of implantation depth and damage upon the beam voltage, a serial of simulations have been performed under impact energy of 2, 5, 8, 12, and 16 kev respectively for the Ga ions. The results indicate that both the normalized implantation depth D and the peak temperature (Tmax) during the collision process are increased with the increase of the impact beam voltage. With the same lattice crystal structure and collision energy, the silicon contains a higher Tmax and a smaller D compared with diamond under all impact energy tested. Further damage evolution analysis and lattice structure changes reflected by radius distribution function (RDF) indicate that the damage of silicon caused by ion bombardment is worse than diamond, which is mainly related to the higher collision temperature and lateral recrystallization process.",
keywords = "diamond, ion collision, molecular dynamic, silicon, gallium, computational modelling, ion beams, lattices",
author = "Z. Tong and Luo, {X. C.} and Liang, {Y. C.} and Bai, {Q. S.} and Sun, {J. N.}",
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Tong, Z, Luo, XC, Liang, YC, Bai, QS & Sun, JN 2012, Simulation Research on FIB Processing: a comparison between silicon and diamond. in Automation and Computing (ICAC), 2012 18th International Conference on. IEEE, IEEE 18th International Conference on Automation & Computing, Loughborough, Loughborough, United Kingdom, 7/09/12.

Simulation Research on FIB Processing: a comparison between silicon and diamond. / Tong, Z.; Luo, X. C.; Liang, Y. C.; Bai, Q. S.; Sun, J. N.

Automation and Computing (ICAC), 2012 18th International Conference on. IEEE, 2012.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - Simulation Research on FIB Processing: a comparison between silicon and diamond

AU - Tong, Z.

AU - Luo, X. C.

AU - Liang, Y. C.

AU - Bai, Q. S.

AU - Sun, J. N.

PY - 2012/10/15

Y1 - 2012/10/15

N2 - The interactions between energetic gallium ion with silicon and diamond have been studied using Large-Scale Molecular Dynamics simulation method. In order to reveal the dependence of implantation depth and damage upon the beam voltage, a serial of simulations have been performed under impact energy of 2, 5, 8, 12, and 16 kev respectively for the Ga ions. The results indicate that both the normalized implantation depth D and the peak temperature (Tmax) during the collision process are increased with the increase of the impact beam voltage. With the same lattice crystal structure and collision energy, the silicon contains a higher Tmax and a smaller D compared with diamond under all impact energy tested. Further damage evolution analysis and lattice structure changes reflected by radius distribution function (RDF) indicate that the damage of silicon caused by ion bombardment is worse than diamond, which is mainly related to the higher collision temperature and lateral recrystallization process.

AB - The interactions between energetic gallium ion with silicon and diamond have been studied using Large-Scale Molecular Dynamics simulation method. In order to reveal the dependence of implantation depth and damage upon the beam voltage, a serial of simulations have been performed under impact energy of 2, 5, 8, 12, and 16 kev respectively for the Ga ions. The results indicate that both the normalized implantation depth D and the peak temperature (Tmax) during the collision process are increased with the increase of the impact beam voltage. With the same lattice crystal structure and collision energy, the silicon contains a higher Tmax and a smaller D compared with diamond under all impact energy tested. Further damage evolution analysis and lattice structure changes reflected by radius distribution function (RDF) indicate that the damage of silicon caused by ion bombardment is worse than diamond, which is mainly related to the higher collision temperature and lateral recrystallization process.

KW - diamond

KW - ion collision

KW - molecular dynamic

KW - silicon

KW - gallium

KW - computational modelling

KW - ion beams

KW - lattices

UR - http://ieeexplore.ieee.org/abstract/document/6330521/

M3 - Conference contribution book

SN - 9781467317221

BT - Automation and Computing (ICAC), 2012 18th International Conference on

PB - IEEE

ER -

Tong Z, Luo XC, Liang YC, Bai QS, Sun JN. Simulation Research on FIB Processing: a comparison between silicon and diamond. In Automation and Computing (ICAC), 2012 18th International Conference on. IEEE. 2012