Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers

J.C.L. Yong, J.M. Rorison, M. Othman, H.D. Sun, M.D. Dawson, K.A. Williams

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.
Original languageEnglish
Pages (from-to)80-82
Number of pages2
JournalIEE Proceedings Optoelectronics
Volume150
Issue number1
DOIs
Publication statusPublished - Feb 2003

Keywords

  • simulation
  • gain
  • modulation
  • bandwidths
  • InGaAsN lasers

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