Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers

J.C.L. Yong; J.M. Rorison; M. Othman; H.D. Sun; M.D. Dawson; K.A. Williams

doi:10.1049/ip-opt:20030048

Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers

J.C.L. Yong, J.M. Rorison, M. Othman, H.D. Sun, M.D. Dawson, K.A. Williams

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.

Original language	English
Pages (from-to)	80-82
Number of pages	2
Journal	IEE Proceedings Optoelectronics
Volume	150
Issue number	1
DOIs	https://doi.org/10.1049/ip-opt:20030048
Publication status	Published - Feb 2003

Keywords

simulation
gain
modulation
bandwidths
InGaAsN lasers

Access to Document

10.1049/ip-opt:20030048

http://dx.doi.org/10.1049/ip-opt:20030048

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abstract = "The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.",

keywords = "simulation, gain, modulation, bandwidths, InGaAsN lasers",

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AU - Yong, J.C.L.

AU - Rorison, J.M.

AU - Othman, M.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Williams, K.A.

PY - 2003/2

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N2 - The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.

AB - The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.

KW - simulation

KW - gain

KW - modulation

KW - bandwidths

KW - InGaAsN lasers

UR - http://dx.doi.org/10.1049/ip-opt:20030048

U2 - 10.1049/ip-opt:20030048

DO - 10.1049/ip-opt:20030048

M3 - Article

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EP - 82

JO - IEE Proceedings Optoelectronics

JF - IEE Proceedings Optoelectronics

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