Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers

J.C.L. Yong, J.M. Rorison, M. Othman, H.D. Sun, M.D. Dawson, K.A. Williams

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.
LanguageEnglish
Pages80-82
Number of pages2
JournalIEE Proceedings Optoelectronics
Volume150
Issue number1
DOIs
Publication statusPublished - Feb 2003

Fingerprint

Ridge waveguides
Quantum well lasers
waveguide lasers
Semiconductor quantum wells
Gages
ridges
Modulation
bandwidth
Bandwidth
modulation
Lasers
simulation
quantum well lasers
Temperature
quantum wells

Keywords

  • simulation
  • gain
  • modulation
  • bandwidths
  • InGaAsN lasers

Cite this

Yong, J.C.L. ; Rorison, J.M. ; Othman, M. ; Sun, H.D. ; Dawson, M.D. ; Williams, K.A. / Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers. In: IEE Proceedings Optoelectronics. 2003 ; Vol. 150, No. 1. pp. 80-82.
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abstract = "The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.",
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Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers. / Yong, J.C.L.; Rorison, J.M.; Othman, M.; Sun, H.D.; Dawson, M.D.; Williams, K.A.

In: IEE Proceedings Optoelectronics, Vol. 150, No. 1, 02.2003, p. 80-82.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers

AU - Yong, J.C.L.

AU - Rorison, J.M.

AU - Othman, M.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Williams, K.A.

PY - 2003/2

Y1 - 2003/2

N2 - The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.

AB - The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.

KW - simulation

KW - gain

KW - modulation

KW - bandwidths

KW - InGaAsN lasers

UR - http://dx.doi.org/10.1049/ip-opt:20030048

U2 - 10.1049/ip-opt:20030048

DO - 10.1049/ip-opt:20030048

M3 - Article

VL - 150

SP - 80

EP - 82

JO - IEE Proceedings Optoelectronics

T2 - IEE Proceedings Optoelectronics

JF - IEE Proceedings Optoelectronics

SN - 1350-2433

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