Abstract
The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.
| Original language | English |
|---|---|
| Pages (from-to) | 80-82 |
| Number of pages | 2 |
| Journal | IEE Proceedings Optoelectronics |
| Volume | 150 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Feb 2003 |
Keywords
- simulation
- gain
- modulation
- bandwidths
- InGaAsN lasers
Fingerprint Dive into the research topics of 'Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers'. Together they form a unique fingerprint.
Cite this
Yong, J. C. L., Rorison, J. M., Othman, M., Sun, H. D., Dawson, M. D., & Williams, K. A. (2003). Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers. IEE Proceedings Optoelectronics, 150(1), 80-82. https://doi.org/10.1049/ip-opt:20030048