Abstract
| Language | English |
|---|---|
| Pages | 80-82 |
| Number of pages | 2 |
| Journal | IEE Proceedings Optoelectronics |
| Volume | 150 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Feb 2003 |
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Keywords
- simulation
- gain
- modulation
- bandwidths
- InGaAsN lasers
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Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers. / Yong, J.C.L.; Rorison, J.M.; Othman, M.; Sun, H.D.; Dawson, M.D.; Williams, K.A.
In: IEE Proceedings Optoelectronics, Vol. 150, No. 1, 02.2003, p. 80-82.Research output: Contribution to journal › Article
TY - JOUR
T1 - Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers
AU - Yong, J.C.L.
AU - Rorison, J.M.
AU - Othman, M.
AU - Sun, H.D.
AU - Dawson, M.D.
AU - Williams, K.A.
PY - 2003/2
Y1 - 2003/2
N2 - The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.
AB - The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.
KW - simulation
KW - gain
KW - modulation
KW - bandwidths
KW - InGaAsN lasers
UR - http://dx.doi.org/10.1049/ip-opt:20030048
U2 - 10.1049/ip-opt:20030048
DO - 10.1049/ip-opt:20030048
M3 - Article
VL - 150
SP - 80
EP - 82
JO - IEE Proceedings Optoelectronics
T2 - IEE Proceedings Optoelectronics
JF - IEE Proceedings Optoelectronics
SN - 1350-2433
IS - 1
ER -