The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.
- InGaAsN lasers
Yong, J. C. L., Rorison, J. M., Othman, M., Sun, H. D., Dawson, M. D., & Williams, K. A. (2003). Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers. IEE Proceedings Optoelectronics, 150(1), 80-82. https://doi.org/10.1049/ip-opt:20030048