Simulation of GaAs 3-D pixel detectors

K Mathieson, R Bates, A Meikle, V O'Shea, MS Passmore, M Rahman, KM Smith

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The performance of an architecture for X-ray pixel detectors is discussed. The three-dimensional (3-D) structure has electrodes which penetrate the bulk of the detector medium allowing low-bias, high-speed operation along with improved charge collection efficiency. We use the modelling package MEDICI to simulate epitaxial gallium arsenide 3-D detectors. This includes an analysis of charge transport and signal formation, with details of the expected charge collection efficiencies. These detectors may be fabricated by a number of means including dry etching. The effect of dry-etch damage on detector performance is analysed as this is potentially an important factor.
Original languageEnglish
Pages (from-to)194-201
Number of pages8
JournalNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume466
Issue number1
DOIs
Publication statusPublished - 21 Jun 2001

Keywords

  • photonics
  • pixel detectors
  • GaAs 3-D pixel detectors
  • arsenide 3-D detectors

Fingerprint Dive into the research topics of 'Simulation of GaAs 3-D pixel detectors'. Together they form a unique fingerprint.

  • Cite this