The performance of an architecture for X-ray pixel detectors is discussed. The three-dimensional (3-D) structure has electrodes which penetrate the bulk of the detector medium allowing low-bias, high-speed operation along with improved charge collection efficiency. We use the modelling package MEDICI to simulate epitaxial gallium arsenide 3-D detectors. This includes an analysis of charge transport and signal formation, with details of the expected charge collection efficiencies. These detectors may be fabricated by a number of means including dry etching. The effect of dry-etch damage on detector performance is analysed as this is potentially an important factor.
|Number of pages||8|
|Journal||Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|Publication status||Published - 21 Jun 2001|
- pixel detectors
- GaAs 3-D pixel detectors
- arsenide 3-D detectors
Mathieson, K., Bates, R., Meikle, A., O'Shea, V., Passmore, MS., Rahman, M., & Smith, KM. (2001). Simulation of GaAs 3-D pixel detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 466(1), 194-201. https://doi.org/10.1016/S0168-9002(01)00845-2