Simulation of GaAs 3-D pixel detectors

K Mathieson, R Bates, A Meikle, V O'Shea, MS Passmore, M Rahman, KM Smith

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The performance of an architecture for X-ray pixel detectors is discussed. The three-dimensional (3-D) structure has electrodes which penetrate the bulk of the detector medium allowing low-bias, high-speed operation along with improved charge collection efficiency. We use the modelling package MEDICI to simulate epitaxial gallium arsenide 3-D detectors. This includes an analysis of charge transport and signal formation, with details of the expected charge collection efficiencies. These detectors may be fabricated by a number of means including dry etching. The effect of dry-etch damage on detector performance is analysed as this is potentially an important factor.
LanguageEnglish
Pages194-201
Number of pages8
JournalNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume466
Issue number1
DOIs
Publication statusPublished - 21 Jun 2001

Fingerprint

Pixels
pixels
Detectors
detectors
simulation
Dry etching
Gallium arsenide
gallium
Charge transfer
high speed
etching
damage
X rays
Electrodes
electrodes
x rays

Keywords

  • photonics
  • pixel detectors
  • GaAs 3-D pixel detectors
  • arsenide 3-D detectors

Cite this

Mathieson, K ; Bates, R ; Meikle, A ; O'Shea, V ; Passmore, MS ; Rahman, M ; Smith, KM. / Simulation of GaAs 3-D pixel detectors. In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2001 ; Vol. 466, No. 1. pp. 194-201.
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Simulation of GaAs 3-D pixel detectors. / Mathieson, K; Bates, R; Meikle, A; O'Shea, V; Passmore, MS; Rahman, M; Smith, KM.

In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 466, No. 1, 21.06.2001, p. 194-201.

Research output: Contribution to journalArticle

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T1 - Simulation of GaAs 3-D pixel detectors

AU - Mathieson, K

AU - Bates, R

AU - Meikle, A

AU - O'Shea, V

AU - Passmore, MS

AU - Rahman, M

AU - Smith, KM

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AB - The performance of an architecture for X-ray pixel detectors is discussed. The three-dimensional (3-D) structure has electrodes which penetrate the bulk of the detector medium allowing low-bias, high-speed operation along with improved charge collection efficiency. We use the modelling package MEDICI to simulate epitaxial gallium arsenide 3-D detectors. This includes an analysis of charge transport and signal formation, with details of the expected charge collection efficiencies. These detectors may be fabricated by a number of means including dry etching. The effect of dry-etch damage on detector performance is analysed as this is potentially an important factor.

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KW - pixel detectors

KW - GaAs 3-D pixel detectors

KW - arsenide 3-D detectors

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