Simple models for InGaN alloys

Fathi Elfituri, Benjamin Hourahine

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The properties of InGaN alloys are important for many applications in optoelectronics, since their fundamental gap spans the visible range. Calculating properties, particularly for InN, is theoretically challenging, especially to obtain accurate values for the band gap. We have developed a semi-empirical parametrization of (In,Ga) N using the density functional based tight binding method (DFTB), where the band gaps of InN and GaN have been empirically corrected to experiment. We demonstrate the performance of this method by calculating a range of properties for the two materials, including elastic constants and carrier effective masses. There are several methods to model alloys of these material, one of the simplest being the virtual crystal approximation, which we apply to derive electronic properties over the whole composition range for InGaN.
LanguageEnglish
Article numberpssc.201100147.R1
Number of pages4
JournalPhysica Status Solidi A
Volume209
Issue number79
Early online date29 Nov 2012
DOIs
Publication statusPublished - 2012

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Energy gap
Elastic constants
Electronic properties
Optoelectronic devices
Crystals
Chemical analysis
elastic properties
Experiments
approximation
electronics
crystals

Keywords

  • InGaN alloys
  • optoelectronics
  • crystal approximation

Cite this

Elfituri, Fathi ; Hourahine, Benjamin. / Simple models for InGaN alloys. In: Physica Status Solidi A. 2012 ; Vol. 209, No. 79.
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Simple models for InGaN alloys. / Elfituri, Fathi; Hourahine, Benjamin.

In: Physica Status Solidi A, Vol. 209, No. 79, pssc.201100147.R1, 2012.

Research output: Contribution to journalArticle

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