Silicon nitride waveguide polarization rotator and polarization beam splitter for chip-scale atomic systems

Kevin Gallacher, Paul F. Griffin, Erling Riis, Marc Sorel, Douglas J. Paul

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)
7 Downloads (Pure)

Abstract

The design, fabrication, and characterization of a silicon nitride waveguide polarization rotator and polarization beam splitter that operate with a polarization extinction ratio (PER) of ∼30 dB at the rubidium atomic transition of 780 nm wavelength are demonstrated. These polarization devices are fabricated on the same chip using a self-aligned process for integration of the rib and ridge waveguide structures. The polarization rotator is based on the mode evolution approach using adiabatic tapers and demonstrates a PER of ≥20 dB over a 100 nm bandwidth (730-830 nm wavelengths) with an insertion loss (IL) ≤1 dB. The polarization beam splitter is based on a cascaded tapered asymmetric directional coupler with phase matching between the fundamental and higher order TM modes, whereas the TE mode is separated by the through port. This provides a PER ≥ 20 dB with IL ≤ 1 dB over a 50 nm bandwidth for the cross port and a PER ≥ 15 dB with an IL ≤ 1 dB over an 18 nm bandwidth for the through port. These polarization control waveguide devices will enable photonic integrated circuits for saturated absorption spectroscopy of atomic vapors for laser stabilization on-chip.

Original languageEnglish
Article number046101
Number of pages8
JournalAPL Photonics
Volume7
Issue number4
DOIs
Publication statusPublished - 1 Apr 2022

Keywords

  • photonic integrated circuits (PICs)
  • silicon nitride
  • chip scale
  • Lab on a chip
  • atomtronics
  • beam splitter
  • waveplate
  • saturated absorption spectroscopy

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