Silicon for thin-film transistors

Sigurd Wagner, Helena Gleskova, I. Chun Cheng, Ming Wu

Research output: Contribution to journalArticle

93 Citations (Scopus)

Abstract

We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials.
Original languageEnglish
Pages (from-to)15-19
Number of pages5
JournalThin Solid Films
Volume430
Issue number1-2
DOIs
Publication statusPublished - 22 Apr 2003
Event2nd International Conference on Cat-CVD (Hot-Wire CVD) Process - Denver, United States
Duration: 10 Sep 200213 Sep 2002

Keywords

  • transistors
  • thin films
  • flexible substrates
  • deposition
  • CVD
  • low-temperature
  • foil
  • TFTS
  • 150-degrees-C

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