Silicon for thin-film transistors

Sigurd Wagner; Helena Gleskova; I. Chun Cheng; Ming Wu

doi:10.1016/S0040-6090(03)00121-4

Silicon for thin-film transistors

Sigurd Wagner^*, Helena Gleskova, I. Chun Cheng, Ming Wu

^*Corresponding author for this work

Electronic And Electrical Engineering

Research output: Contribution to journal › Article › peer-review

97 Citations (Scopus)

Abstract

We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials.

Original language	English
Pages (from-to)	15-19
Number of pages	5
Journal	Thin Solid Films
Volume	430
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(03)00121-4
Publication status	Published - 22 Apr 2003
Event	2nd International Conference on Cat-CVD (Hot-Wire CVD) Process - Denver, United States Duration: 10 Sept 2002 → 13 Sept 2002

Keywords

transistors
thin films
flexible substrates
deposition
CVD
low-temperature
foil
TFTS
150-degrees-C

Access to Document

10.1016/S0040-6090(03)00121-4

Cite this

@article{1642577104b0455fb93e5613932778e0,

title = "Silicon for thin-film transistors",

abstract = "We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials.",

keywords = "transistors, thin films, flexible substrates, deposition, CVD, low-temperature, foil, TFTS, 150-degrees-C",

author = "Sigurd Wagner and Helena Gleskova and Cheng, {I. Chun} and Ming Wu",

year = "2003",

month = apr,

day = "22",

doi = "10.1016/S0040-6090(03)00121-4",

language = "English",

volume = "430",

pages = "15--19",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "1-2",

note = "2nd International Conference on Cat-CVD (Hot-Wire CVD) Process ; Conference date: 10-09-2002 Through 13-09-2002",

}

TY - JOUR

T1 - Silicon for thin-film transistors

AU - Wagner, Sigurd

AU - Gleskova, Helena

AU - Cheng, I. Chun

AU - Wu, Ming

PY - 2003/4/22

Y1 - 2003/4/22

N2 - We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials.

AB - We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials.

KW - transistors

KW - thin films

KW - flexible substrates

KW - deposition

KW - CVD

KW - low-temperature

KW - foil

KW - TFTS

KW - 150-degrees-C

UR - http://www.scopus.com/inward/record.url?scp=0038147240&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(03)00121-4

DO - 10.1016/S0040-6090(03)00121-4

M3 - Article

AN - SCOPUS:0038147240

SN - 0040-6090

VL - 430

SP - 15

EP - 19

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - 2nd International Conference on Cat-CVD (Hot-Wire CVD) Process

Y2 - 10 September 2002 through 13 September 2002

ER -

Silicon for thin-film transistors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this