Silicon for thin-film transistors

Sigurd Wagner, Helena Gleskova, I. Chun Cheng, Ming Wu

Research output: Contribution to journalArticle

92 Citations (Scopus)

Abstract

We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials.
LanguageEnglish
Pages15-19
Number of pages5
JournalThin Solid Films
Volume430
Issue number1-2
DOIs
Publication statusPublished - 22 Apr 2003
Event2nd International Conference on Cat-CVD (Hot-Wire CVD) Process - Denver, United States
Duration: 10 Sep 200213 Sep 2002

Fingerprint

Silicon
Thin film transistors
transistors
silicon
thin films
Semiconductor materials
MIS (semiconductors)
Amorphous films
Substrates
silicon films
compatibility
Metal foil
foils
Metals
Electrons
electrons

Keywords

  • transistors
  • thin films
  • flexible substrates
  • deposition
  • CVD
  • low-temperature
  • foil
  • TFTS
  • 150-degrees-C

Cite this

Wagner, Sigurd ; Gleskova, Helena ; Cheng, I. Chun ; Wu, Ming. / Silicon for thin-film transistors. In: Thin Solid Films. 2003 ; Vol. 430, No. 1-2. pp. 15-19.
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Silicon for thin-film transistors. / Wagner, Sigurd; Gleskova, Helena; Cheng, I. Chun; Wu, Ming.

In: Thin Solid Films, Vol. 430, No. 1-2, 22.04.2003, p. 15-19.

Research output: Contribution to journalArticle

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