We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials.
|Number of pages||5|
|Journal||Thin Solid Films|
|Publication status||Published - 22 Apr 2003|
|Event||2nd International Conference on Cat-CVD (Hot-Wire CVD) Process - Denver, United States|
Duration: 10 Sep 2002 → 13 Sep 2002
- thin films
- flexible substrates