Silicon doping of gallium nitride using ditertiarybutylsilane

C.J. Deatcher, C. Liu, M.G. Cheong, L.M. Smith, S. Rushworth, A. Widdowson, I.M. Watson

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


No abstract
Original languageEnglish
Pages (from-to)187-190
Number of pages3
JournalChemical Vapor Deposition
Issue number4
Publication statusPublished - 8 Sep 2004


  • gallium nitride
  • metal-organic vapor phase epitaxy
  • silanes
  • silicon doping

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