Silicon doping of gallium nitride using ditertiarybutylsilane

C.J. Deatcher, C. Liu, M.G. Cheong, L.M. Smith, S. Rushworth, A. Widdowson, I.M. Watson

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

No abstract
LanguageEnglish
Pages187-190
Number of pages3
JournalChemical Vapor Deposition
Volume10
Issue number4
DOIs
Publication statusPublished - 8 Sep 2004

Fingerprint

Gallium nitride
gallium nitrides
Silicon
Doping (additives)
silicon
gallium nitride

Keywords

  • gallium nitride
  • metal-organic vapor phase epitaxy
  • silanes
  • silicon doping

Cite this

Deatcher, C. J., Liu, C., Cheong, M. G., Smith, L. M., Rushworth, S., Widdowson, A., & Watson, I. M. (2004). Silicon doping of gallium nitride using ditertiarybutylsilane. Chemical Vapor Deposition, 10(4), 187-190. https://doi.org/10.1002/cvde.200304171
Deatcher, C.J. ; Liu, C. ; Cheong, M.G. ; Smith, L.M. ; Rushworth, S. ; Widdowson, A. ; Watson, I.M. / Silicon doping of gallium nitride using ditertiarybutylsilane. In: Chemical Vapor Deposition. 2004 ; Vol. 10, No. 4. pp. 187-190.
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author = "C.J. Deatcher and C. Liu and M.G. Cheong and L.M. Smith and S. Rushworth and A. Widdowson and I.M. Watson",
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Deatcher, CJ, Liu, C, Cheong, MG, Smith, LM, Rushworth, S, Widdowson, A & Watson, IM 2004, 'Silicon doping of gallium nitride using ditertiarybutylsilane' Chemical Vapor Deposition, vol. 10, no. 4, pp. 187-190. https://doi.org/10.1002/cvde.200304171

Silicon doping of gallium nitride using ditertiarybutylsilane. / Deatcher, C.J.; Liu, C.; Cheong, M.G.; Smith, L.M.; Rushworth, S.; Widdowson, A.; Watson, I.M.

In: Chemical Vapor Deposition, Vol. 10, No. 4, 08.09.2004, p. 187-190.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Silicon doping of gallium nitride using ditertiarybutylsilane

AU - Deatcher, C.J.

AU - Liu, C.

AU - Cheong, M.G.

AU - Smith, L.M.

AU - Rushworth, S.

AU - Widdowson, A.

AU - Watson, I.M.

PY - 2004/9/8

Y1 - 2004/9/8

N2 - No abstract

AB - No abstract

KW - gallium nitride

KW - metal-organic vapor phase epitaxy

KW - silanes

KW - silicon doping

UR - http://dx.doi.org/10.1002/cvde.200304171

U2 - 10.1002/cvde.200304171

DO - 10.1002/cvde.200304171

M3 - Article

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EP - 190

JO - Chemical Vapor Deposition

T2 - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

SN - 0948-1907

IS - 4

ER -

Deatcher CJ, Liu C, Cheong MG, Smith LM, Rushworth S, Widdowson A et al. Silicon doping of gallium nitride using ditertiarybutylsilane. Chemical Vapor Deposition. 2004 Sep 8;10(4):187-190. https://doi.org/10.1002/cvde.200304171