Silicon doping of gallium nitride using ditertiarybutylsilane

C.J. Deatcher, C. Liu, M.G. Cheong, L.M. Smith, S. Rushworth, A. Widdowson, I.M. Watson

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

No abstract
Original languageEnglish
Pages (from-to)187-190
Number of pages3
JournalChemical Vapor Deposition
Volume10
Issue number4
DOIs
Publication statusPublished - 8 Sep 2004

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Keywords

  • gallium nitride
  • metal-organic vapor phase epitaxy
  • silanes
  • silicon doping

Cite this

Deatcher, C. J., Liu, C., Cheong, M. G., Smith, L. M., Rushworth, S., Widdowson, A., & Watson, I. M. (2004). Silicon doping of gallium nitride using ditertiarybutylsilane. Chemical Vapor Deposition, 10(4), 187-190. https://doi.org/10.1002/cvde.200304171