Short Wavelength GaInNAs/GaAs semiconductor disk lasers

S.L. Vetter; J.E. Hastie; V.M. Korpijarvi; J. Puustinen; M. Guina; O. Okhotnikov; S. Calvez; M.D. Dawson

doi:10.1049/el:20081488

Short Wavelength GaInNAs/GaAs semiconductor disk lasers

S.L. Vetter, J.E. Hastie, V.M. Korpijarvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, M.D. Dawson

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1160-1210-nm wavelength range is reported.

Original language	English
Pages (from-to)	1069-1070
Number of pages	1
Journal	Electronics Letters
Volume	44
Issue number	18
DOIs	https://doi.org/10.1049/el:20081488
Publication status	Published - 28 Aug 2008

Keywords

III-V semiconductors
gallium arsenide
indium compounds
semiconductor laser
semiconductor disk laser

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10.1049/el:20081488

Cite this

@article{1626d3c7983742d4a452ee6db7215971,

title = "Short Wavelength GaInNAs/GaAs semiconductor disk lasers",

abstract = "The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1160-1210-nm wavelength range is reported.",

keywords = "III-V semiconductors, gallium arsenide, indium compounds, semiconductor laser, semiconductor disk laser",

author = "S.L. Vetter and J.E. Hastie and V.M. Korpijarvi and J. Puustinen and M. Guina and O. Okhotnikov and S. Calvez and M.D. Dawson",

year = "2008",

month = aug,

day = "28",

doi = "10.1049/el:20081488",

language = "English",

volume = "44",

pages = "1069--1070",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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TY - JOUR

T1 - Short Wavelength GaInNAs/GaAs semiconductor disk lasers

AU - Vetter, S.L.

AU - Hastie, J.E.

AU - Korpijarvi, V.M.

AU - Puustinen, J.

AU - Guina, M.

AU - Okhotnikov, O.

AU - Calvez, S.

AU - Dawson, M.D.

PY - 2008/8/28

Y1 - 2008/8/28

N2 - The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1160-1210-nm wavelength range is reported.

AB - The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1160-1210-nm wavelength range is reported.

KW - III-V semiconductors

KW - gallium arsenide

KW - indium compounds

KW - semiconductor laser

KW - semiconductor disk laser

UR - http://dx.doi.org/10.1049/el:20081488

U2 - 10.1049/el:20081488

DO - 10.1049/el:20081488

M3 - Article

VL - 44

SP - 1069

EP - 1070

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 18

ER -

Short Wavelength GaInNAs/GaAs semiconductor disk lasers

Abstract

Keywords

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MUSIC: MODULAR ULTRAFAST SOURCES

ADVANCED SOLID STATE LASER SOURCES AND SYSTEMS

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Short Wavelength GaInNAs/GaAs semiconductor disk lasers

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Projects

MUSIC: MODULAR ULTRAFAST SOURCES

ADVANCED SOLID STATE LASER SOURCES AND SYSTEMS

Cite this