Short Wavelength GaInNAs/GaAs semiconductor disk lasers

S.L. Vetter, J.E. Hastie, V.M. Korpijarvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, M.D. Dawson

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1160-1210-nm wavelength range is reported.
Original languageEnglish
Pages (from-to)1069-1070
Number of pages1
JournalElectronics Letters
Issue number18
Publication statusPublished - 28 Aug 2008


  • III-V semiconductors
  • gallium arsenide
  • indium compounds
  • semiconductor laser
  • semiconductor disk laser


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