Short Wavelength GaInNAs/GaAs semiconductor disk lasers

S.L. Vetter, J.E. Hastie, V.M. Korpijarvi, J. Puustinen, M. Guina, O. Okhotnikov, S. Calvez, M.D. Dawson

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1160-1210-nm wavelength range is reported.
LanguageEnglish
Pages1069-1070
Number of pages1
JournalElectronics Letters
Volume44
Issue number18
DOIs
Publication statusPublished - 28 Aug 2008

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Videodisks
Semiconductor materials
Wavelength

Keywords

  • III-V semiconductors
  • gallium arsenide
  • indium compounds
  • semiconductor laser
  • semiconductor disk laser

Cite this

Vetter, S. L., Hastie, J. E., Korpijarvi, V. M., Puustinen, J., Guina, M., Okhotnikov, O., ... Dawson, M. D. (2008). Short Wavelength GaInNAs/GaAs semiconductor disk lasers. Electronics Letters, 44(18), 1069-1070. https://doi.org/10.1049/el:20081488
Vetter, S.L. ; Hastie, J.E. ; Korpijarvi, V.M. ; Puustinen, J. ; Guina, M. ; Okhotnikov, O. ; Calvez, S. ; Dawson, M.D. / Short Wavelength GaInNAs/GaAs semiconductor disk lasers. In: Electronics Letters. 2008 ; Vol. 44, No. 18. pp. 1069-1070.
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abstract = "The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1160-1210-nm wavelength range is reported.",
keywords = "III-V semiconductors, gallium arsenide, indium compounds, semiconductor laser, semiconductor disk laser",
author = "S.L. Vetter and J.E. Hastie and V.M. Korpijarvi and J. Puustinen and M. Guina and O. Okhotnikov and S. Calvez and M.D. Dawson",
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Vetter, SL, Hastie, JE, Korpijarvi, VM, Puustinen, J, Guina, M, Okhotnikov, O, Calvez, S & Dawson, MD 2008, 'Short Wavelength GaInNAs/GaAs semiconductor disk lasers' Electronics Letters, vol. 44, no. 18, pp. 1069-1070. https://doi.org/10.1049/el:20081488

Short Wavelength GaInNAs/GaAs semiconductor disk lasers. / Vetter, S.L.; Hastie, J.E.; Korpijarvi, V.M.; Puustinen, J.; Guina, M.; Okhotnikov, O.; Calvez, S.; Dawson, M.D.

In: Electronics Letters, Vol. 44, No. 18, 28.08.2008, p. 1069-1070.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Short Wavelength GaInNAs/GaAs semiconductor disk lasers

AU - Vetter, S.L.

AU - Hastie, J.E.

AU - Korpijarvi, V.M.

AU - Puustinen, J.

AU - Guina, M.

AU - Okhotnikov, O.

AU - Calvez, S.

AU - Dawson, M.D.

PY - 2008/8/28

Y1 - 2008/8/28

N2 - The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1160-1210-nm wavelength range is reported.

AB - The use of GaInNAs/GaAs as an alternative active material to InGaAs/GaAs for semiconductor disk lasers with Watt-level emission in the 1160-1210-nm wavelength range is reported.

KW - III-V semiconductors

KW - gallium arsenide

KW - indium compounds

KW - semiconductor laser

KW - semiconductor disk laser

UR - http://dx.doi.org/10.1049/el:20081488

U2 - 10.1049/el:20081488

DO - 10.1049/el:20081488

M3 - Article

VL - 44

SP - 1069

EP - 1070

JO - Electronics Letters

T2 - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 18

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Vetter SL, Hastie JE, Korpijarvi VM, Puustinen J, Guina M, Okhotnikov O et al. Short Wavelength GaInNAs/GaAs semiconductor disk lasers. Electronics Letters. 2008 Aug 28;44(18):1069-1070. https://doi.org/10.1049/el:20081488