Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates: [LED display applications]

K. Long; H. Gleskova; Sigurd  Wagner; J. C. Sturm

doi:10.1109/DRC.2004.1367797

Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates: [LED display applications]

K. Long^*, H. Gleskova, Sigurd Wagner, J. C. Sturm

^*Corresponding author for this work

Electronic And Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

12 Citations (Scopus)

Abstract

The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiN _x buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.

Original language	English
Title of host publication	Device Research Conference - Conference Digest, DRC
Publisher	IEEE
Pages	89-90
Number of pages	2
ISBN (Print)	0780382846
DOIs	https://doi.org/10.1109/DRC.2004.1367797
Publication status	Published - 1 Dec 2004
Event	62nd DRC Device Research Conference, 2004 - Indiana, United States Duration: 21 Jun 2004 → 23 Jun 2004

Conference

Conference	62nd DRC Device Research Conference, 2004
Country/Territory	United States
City	Indiana
Period	21/06/04 → 23/06/04

Keywords

temperature
active matrix organic light emitting diodes
displays
glass
light emitting diodes
optical device fabrication
optical devices
organic light emitting diodes
plastics
surface cleaning

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10.1109/DRC.2004.1367797

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@inproceedings{a6776f03ddd946ef977efb85e8e6e014,

title = "Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates: [LED display applications] ",

abstract = "The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiN x buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.",

keywords = "temperature , active matrix organic light emitting diodes, displays, glass , light emitting diodes, optical device fabrication, optical devices, organic light emitting diodes, plastics, surface cleaning",

author = "K. Long and H. Gleskova and Sigurd Wagner and Sturm, {J. C.}",

year = "2004",

month = dec,

day = "1",

doi = "10.1109/DRC.2004.1367797",

language = "English",

isbn = "0780382846",

pages = "89--90",

booktitle = "Device Research Conference - Conference Digest, DRC",

publisher = "IEEE",

note = "62nd DRC Device Research Conference, 2004 ; Conference date: 21-06-2004 Through 23-06-2004",

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T1 - Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates

T2 - 62nd DRC Device Research Conference, 2004

AU - Long, K.

AU - Gleskova, H.

AU - Wagner, Sigurd

AU - Sturm, J. C.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiN x buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.

AB - The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiN x buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.

KW - temperature

KW - active matrix organic light emitting diodes

KW - displays

KW - glass

KW - light emitting diodes

KW - optical device fabrication

KW - optical devices

KW - organic light emitting diodes

KW - plastics

KW - surface cleaning

UR - http://www.scopus.com/inward/record.url?scp=18044385539&partnerID=8YFLogxK

U2 - 10.1109/DRC.2004.1367797

DO - 10.1109/DRC.2004.1367797

M3 - Conference contribution book

AN - SCOPUS:18044385539

SN - 0780382846

SP - 89

EP - 90

BT - Device Research Conference - Conference Digest, DRC

PB - IEEE

Y2 - 21 June 2004 through 23 June 2004

ER -

Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates: [LED display applications]

Abstract

Conference

Keywords

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