Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates: [LED display applications]

K. Long, H. Gleskova, Sigurd Wagner, J. C. Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

12 Citations (Scopus)

Abstract

The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiN x buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.

LanguageEnglish
Title of host publicationDevice Research Conference - Conference Digest, DRC
PublisherIEEE
Pages89-90
Number of pages2
ISBN (Print)0780382846
DOIs
Publication statusPublished - 1 Dec 2004
Event62nd DRC Device Research Conference, 2004 - Indiana, United States
Duration: 21 Jun 200423 Jun 2004

Conference

Conference62nd DRC Device Research Conference, 2004
CountryUnited States
CityIndiana
Period21/06/0423/06/04

Fingerprint

amorphous silicon
light emitting diodes
plastics
transistors
thin films
adhesion
leakage
buffers
vapor deposition
fabrication

Keywords

  • temperature
  • active matrix organic light emitting diodes
  • displays
  • glass
  • light emitting diodes
  • optical device fabrication
  • optical devices
  • organic light emitting diodes
  • plastics
  • surface cleaning

Cite this

Long, K., Gleskova, H., Wagner, S., & Sturm, J. C. (2004). Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates: [LED display applications] . In Device Research Conference - Conference Digest, DRC (pp. 89-90). [III.-19] IEEE. https://doi.org/10.1109/DRC.2004.1367797
Long, K. ; Gleskova, H. ; Wagner, Sigurd ; Sturm, J. C. / Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates : [LED display applications] . Device Research Conference - Conference Digest, DRC. IEEE, 2004. pp. 89-90
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title = "Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates: [LED display applications]",
abstract = "The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiN x buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.",
keywords = "temperature , active matrix organic light emitting diodes, displays, glass , light emitting diodes, optical device fabrication, optical devices, organic light emitting diodes, plastics, surface cleaning",
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Long, K, Gleskova, H, Wagner, S & Sturm, JC 2004, Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates: [LED display applications] . in Device Research Conference - Conference Digest, DRC., III.-19, IEEE, pp. 89-90, 62nd DRC Device Research Conference, 2004, Indiana, United States, 21/06/04. https://doi.org/10.1109/DRC.2004.1367797

Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates : [LED display applications] . / Long, K.; Gleskova, H.; Wagner, Sigurd ; Sturm, J. C.

Device Research Conference - Conference Digest, DRC. IEEE, 2004. p. 89-90 III.-19.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates

T2 - [LED display applications]

AU - Long, K.

AU - Gleskova, H.

AU - Wagner, Sigurd

AU - Sturm, J. C.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiN x buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.

AB - The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiN x buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.

KW - temperature

KW - active matrix organic light emitting diodes

KW - displays

KW - glass

KW - light emitting diodes

KW - optical device fabrication

KW - optical devices

KW - organic light emitting diodes

KW - plastics

KW - surface cleaning

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Long K, Gleskova H, Wagner S, Sturm JC. Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates: [LED display applications] . In Device Research Conference - Conference Digest, DRC. IEEE. 2004. p. 89-90. III.-19 https://doi.org/10.1109/DRC.2004.1367797