Shear instability of nanocrystalline silicon carbide during nanometric cutting

Saurav Goel, Xichun Luo, Robert L Reuben

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)

Abstract

The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100 m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp3-sp2 disorder resulting in the local formation of SiC-graphene and Herzfeld-Mott transitions of 3C-SiC at much lower transition pressures than that required under pure compression. Besides explaining the ductility of SiC at 1500 K, this is a promising phenomenon in general nanoscale engineering of SiC. It shows that modifying the tetrahedral bonding of 3C-SiC, which would otherwise require sophisticated pressure cells, can be achieved more easily by introducing non-hydrostatic stress conditions.
Original languageEnglish
Number of pages5
JournalApplied Physics Letters
Volume100
DOIs
Publication statusPublished - 2012

Keywords

  • shear instability
  • nanocrystalline
  • silicon carbide
  • nanometric cutting

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