Shear instability of nanocrystalline silicon carbide during nanometric cutting

Saurav Goel, Xichun Luo, Robert L Reuben

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100 m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp3-sp2 disorder resulting in the local formation of SiC-graphene and Herzfeld-Mott transitions of 3C-SiC at much lower transition pressures than that required under pure compression. Besides explaining the ductility of SiC at 1500 K, this is a promising phenomenon in general nanoscale engineering of SiC. It shows that modifying the tetrahedral bonding of 3C-SiC, which would otherwise require sophisticated pressure cells, can be achieved more easily by introducing non-hydrostatic stress conditions.
LanguageEnglish
Number of pages5
JournalApplied Physics Letters
Volume100
DOIs
Publication statusPublished - 2012

Fingerprint

Nanocrystalline silicon
Silicon carbide
silicon carbides
shear
transition pressure
ductility
Graphene
Ductility
Molecular dynamics
graphene
low pressure
engineering
disorders
molecular dynamics
causes
Computer simulation
cells
simulation

Keywords

  • shear instability
  • nanocrystalline
  • silicon carbide
  • nanometric cutting

Cite this

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abstract = "The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100 m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp3-sp2 disorder resulting in the local formation of SiC-graphene and Herzfeld-Mott transitions of 3C-SiC at much lower transition pressures than that required under pure compression. Besides explaining the ductility of SiC at 1500 K, this is a promising phenomenon in general nanoscale engineering of SiC. It shows that modifying the tetrahedral bonding of 3C-SiC, which would otherwise require sophisticated pressure cells, can be achieved more easily by introducing non-hydrostatic stress conditions.",
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Shear instability of nanocrystalline silicon carbide during nanometric cutting. / Goel, Saurav ; Luo, Xichun; Reuben, Robert L .

In: Applied Physics Letters, Vol. 100, 2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Shear instability of nanocrystalline silicon carbide during nanometric cutting

AU - Goel, Saurav

AU - Luo, Xichun

AU - Reuben, Robert L

PY - 2012

Y1 - 2012

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AB - The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100 m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp3-sp2 disorder resulting in the local formation of SiC-graphene and Herzfeld-Mott transitions of 3C-SiC at much lower transition pressures than that required under pure compression. Besides explaining the ductility of SiC at 1500 K, this is a promising phenomenon in general nanoscale engineering of SiC. It shows that modifying the tetrahedral bonding of 3C-SiC, which would otherwise require sophisticated pressure cells, can be achieved more easily by introducing non-hydrostatic stress conditions.

KW - shear instability

KW - nanocrystalline

KW - silicon carbide

KW - nanometric cutting

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