Semiconductor snail lasers

Michael Strain; G Mezosi; Julien Javaloyes; Marc Sorel; Antonio Perez-Serrano; Alessandro Scirè; Salvador Balle; Jan Danckaert; Guy Verschaffelt

doi:10.1063/1.3371721

Semiconductor snail lasers

Michael Strain, G Mezosi, Julien Javaloyes, Marc Sorel, Antonio Perez-Serrano, Alessandro Scirè, Salvador Balle, Jan Danckaert, Guy Verschaffelt

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A modified ring laser geometry is presented to promote stable unidirectional lasing. The effects of directional coupling and facet reflectivities are investigated with respect to quantum efficiency, directionality, and side-mode suppression ratio of the lasing spectra. Simulation and experimental results are presented showing single mode (>20 dB side-mode suppression ratio), unidirectional lasing on an InP based multiple quantum well material.

Original language	English
Article number	121105
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	12
DOIs	https://doi.org/10.1063/1.3371721
Publication status	Published - 22 Mar 2010

Keywords

III-V semiconductors
indium compounds
laser modes
laser stability
quantum well lasers
ring lasers

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10.1063/1.3371721

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title = "Semiconductor snail lasers",

abstract = "A modified ring laser geometry is presented to promote stable unidirectional lasing. The effects of directional coupling and facet reflectivities are investigated with respect to quantum efficiency, directionality, and side-mode suppression ratio of the lasing spectra. Simulation and experimental results are presented showing single mode (>20 dB side-mode suppression ratio), unidirectional lasing on an InP based multiple quantum well material.",

keywords = "III-V semiconductors, indium compounds, laser modes, laser stability, quantum well lasers, ring lasers ",

author = "Michael Strain and G Mezosi and Julien Javaloyes and Marc Sorel and Antonio Perez-Serrano and Alessandro Scir{\`e} and Salvador Balle and Jan Danckaert and Guy Verschaffelt",

year = "2010",

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language = "English",

volume = "96",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Semiconductor snail lasers

AU - Strain, Michael

AU - Mezosi, G

AU - Javaloyes, Julien

AU - Sorel, Marc

AU - Perez-Serrano, Antonio

AU - Scirè, Alessandro

AU - Balle, Salvador

AU - Danckaert, Jan

AU - Verschaffelt, Guy

PY - 2010/3/22

Y1 - 2010/3/22

N2 - A modified ring laser geometry is presented to promote stable unidirectional lasing. The effects of directional coupling and facet reflectivities are investigated with respect to quantum efficiency, directionality, and side-mode suppression ratio of the lasing spectra. Simulation and experimental results are presented showing single mode (>20 dB side-mode suppression ratio), unidirectional lasing on an InP based multiple quantum well material.

AB - A modified ring laser geometry is presented to promote stable unidirectional lasing. The effects of directional coupling and facet reflectivities are investigated with respect to quantum efficiency, directionality, and side-mode suppression ratio of the lasing spectra. Simulation and experimental results are presented showing single mode (>20 dB side-mode suppression ratio), unidirectional lasing on an InP based multiple quantum well material.

KW - III-V semiconductors

KW - indium compounds

KW - laser modes

KW - laser stability

KW - quantum well lasers

KW - ring lasers

U2 - 10.1063/1.3371721

DO - 10.1063/1.3371721

M3 - Article

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121105

ER -

Semiconductor snail lasers

Abstract

Keywords

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