Semiconductor snail lasers

Michael Strain, G Mezosi, Julien Javaloyes, Marc Sorel, Antonio Perez-Serrano, Alessandro Scirè, Salvador Balle, Jan Danckaert, Guy Verschaffelt

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9 Citations (Scopus)

Abstract

A modified ring laser geometry is presented to promote stable unidirectional lasing. The effects of directional coupling and facet reflectivities are investigated with respect to quantum efficiency, directionality, and side-mode suppression ratio of the lasing spectra. Simulation and experimental results are presented showing single mode (>20 dB side-mode suppression ratio), unidirectional lasing on an InP based multiple quantum well material.
Original languageEnglish
Article number121105
Number of pages3
JournalApplied Physics Letters
Volume96
Issue number12
DOIs
Publication statusPublished - 22 Mar 2010

Keywords

  • III-V semiconductors
  • indium compounds
  • laser modes
  • laser stability
  • quantum well lasers
  • ring lasers

Cite this

Strain, M., Mezosi, G., Javaloyes, J., Sorel, M., Perez-Serrano, A., Scirè, A., Balle, S., Danckaert, J., & Verschaffelt, G. (2010). Semiconductor snail lasers. Applied Physics Letters, 96(12), [121105 ]. https://doi.org/10.1063/1.3371721