Semiconductor snail lasers

Michael Strain, G Mezosi, Julien Javaloyes, Marc Sorel, Antonio Perez-Serrano, Alessandro Scirè, Salvador Balle, Jan Danckaert, Guy Verschaffelt

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A modified ring laser geometry is presented to promote stable unidirectional lasing. The effects of directional coupling and facet reflectivities are investigated with respect to quantum efficiency, directionality, and side-mode suppression ratio of the lasing spectra. Simulation and experimental results are presented showing single mode (>20 dB side-mode suppression ratio), unidirectional lasing on an InP based multiple quantum well material.
LanguageEnglish
Article number121105
Number of pages3
JournalApplied Physics Letters
Volume96
Issue number12
DOIs
Publication statusPublished - 22 Mar 2010

Fingerprint

snails
lasing
retarding
lasers
ring lasers
quantum efficiency
flat surfaces
quantum wells
reflectance
geometry
simulation

Keywords

  • III-V semiconductors
  • indium compounds
  • laser modes
  • laser stability
  • quantum well lasers
  • ring lasers

Cite this

Strain, M., Mezosi, G., Javaloyes, J., Sorel, M., Perez-Serrano, A., Scirè, A., ... Verschaffelt, G. (2010). Semiconductor snail lasers. Applied Physics Letters, 96(12), [121105 ]. https://doi.org/10.1063/1.3371721
Strain, Michael ; Mezosi, G ; Javaloyes, Julien ; Sorel, Marc ; Perez-Serrano, Antonio ; Scirè, Alessandro ; Balle, Salvador ; Danckaert, Jan ; Verschaffelt, Guy. / Semiconductor snail lasers. In: Applied Physics Letters. 2010 ; Vol. 96, No. 12.
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keywords = "III-V semiconductors, indium compounds, laser modes, laser stability, quantum well lasers, ring lasers",
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Strain, M, Mezosi, G, Javaloyes, J, Sorel, M, Perez-Serrano, A, Scirè, A, Balle, S, Danckaert, J & Verschaffelt, G 2010, 'Semiconductor snail lasers' Applied Physics Letters, vol. 96, no. 12, 121105 . https://doi.org/10.1063/1.3371721

Semiconductor snail lasers. / Strain, Michael; Mezosi, G; Javaloyes, Julien; Sorel, Marc; Perez-Serrano, Antonio; Scirè, Alessandro; Balle, Salvador; Danckaert, Jan; Verschaffelt, Guy.

In: Applied Physics Letters, Vol. 96, No. 12, 121105 , 22.03.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Semiconductor snail lasers

AU - Strain, Michael

AU - Mezosi, G

AU - Javaloyes, Julien

AU - Sorel, Marc

AU - Perez-Serrano, Antonio

AU - Scirè, Alessandro

AU - Balle, Salvador

AU - Danckaert, Jan

AU - Verschaffelt, Guy

PY - 2010/3/22

Y1 - 2010/3/22

N2 - A modified ring laser geometry is presented to promote stable unidirectional lasing. The effects of directional coupling and facet reflectivities are investigated with respect to quantum efficiency, directionality, and side-mode suppression ratio of the lasing spectra. Simulation and experimental results are presented showing single mode (>20 dB side-mode suppression ratio), unidirectional lasing on an InP based multiple quantum well material.

AB - A modified ring laser geometry is presented to promote stable unidirectional lasing. The effects of directional coupling and facet reflectivities are investigated with respect to quantum efficiency, directionality, and side-mode suppression ratio of the lasing spectra. Simulation and experimental results are presented showing single mode (>20 dB side-mode suppression ratio), unidirectional lasing on an InP based multiple quantum well material.

KW - III-V semiconductors

KW - indium compounds

KW - laser modes

KW - laser stability

KW - quantum well lasers

KW - ring lasers

U2 - 10.1063/1.3371721

DO - 10.1063/1.3371721

M3 - Article

VL - 96

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

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Strain M, Mezosi G, Javaloyes J, Sorel M, Perez-Serrano A, Scirè A et al. Semiconductor snail lasers. Applied Physics Letters. 2010 Mar 22;96(12). 121105 . https://doi.org/10.1063/1.3371721