Semiconductor snail laser

M.J. Strain; A. Pérez-Serrano; G. Mezösi; G. Verschaffelt; A. Scirè; J. Danckaert; M. Sorel; S. Balle

doi:10.1109/CLEOE-EQEC.2009.5191743

Semiconductor snail laser

M.J. Strain, A. Pérez-Serrano, G. Mezösi, G. Verschaffelt, A. Scirè, J. Danckaert, M. Sorel, S. Balle

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

A new snail laser geometry is modelled and presented, exhibiting stable, unidirectional lasing at both 1550 nm and 808 nm. We have calculated the fundamental mode thresholds and output power for Semiconductor Snail Laser (SSL) as a function of device parameters, i.e. coupler efficiency and output facets reflectivities. The coupler efficiency is the fraction of light transmitted between the waveguides in the directional couplers (DC). We have used a scattering matrix formulation and an analytical approximation to the optical susceptibility for the medium description, in order to determine the "optimal" coupling efficiency that maximizes the output power. Lasing action and good emission properties were therefore theoretically predicted.

Original language	English
Title of host publication	European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009.
Place of Publication	New York
Publisher	IEEE
Number of pages	1
ISBN (Print)	9781424440795
DOIs	https://doi.org/10.1109/CLEOE-EQEC.2009.5191743
Publication status	Published - 2009

Keywords

semiconductor snail laser
semiconductor lasers
S-matrix theory
laser beams
laser modes
optical directional couplers
optical susceptibility
optical waveguides

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10.1109/CLEOE-EQEC.2009.5191743

Cite this

@inproceedings{ea688d213021463eb305d365f6962b76,

title = "Semiconductor snail laser",

abstract = "A new snail laser geometry is modelled and presented, exhibiting stable, unidirectional lasing at both 1550 nm and 808 nm. We have calculated the fundamental mode thresholds and output power for Semiconductor Snail Laser (SSL) as a function of device parameters, i.e. coupler efficiency and output facets reflectivities. The coupler efficiency is the fraction of light transmitted between the waveguides in the directional couplers (DC). We have used a scattering matrix formulation and an analytical approximation to the optical susceptibility for the medium description, in order to determine the {"}optimal{"} coupling efficiency that maximizes the output power. Lasing action and good emission properties were therefore theoretically predicted.",

keywords = "semiconductor snail laser, semiconductor lasers , S-matrix theory, laser beams, laser modes, optical directional couplers, optical susceptibility, optical waveguides",

author = "M.J. Strain and A. P{\'e}rez-Serrano and G. Mez{\"o}si and G. Verschaffelt and A. Scir{\`e} and J. Danckaert and M. Sorel and S. Balle",

year = "2009",

doi = "10.1109/CLEOE-EQEC.2009.5191743",

language = "English",

isbn = "9781424440795",

booktitle = "European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009.",

publisher = "IEEE",

}

TY - GEN

T1 - Semiconductor snail laser

AU - Strain, M.J.

AU - Pérez-Serrano, A.

AU - Mezösi, G.

AU - Verschaffelt, G.

AU - Scirè, A.

AU - Danckaert, J.

AU - Sorel, M.

AU - Balle, S.

PY - 2009

Y1 - 2009

N2 - A new snail laser geometry is modelled and presented, exhibiting stable, unidirectional lasing at both 1550 nm and 808 nm. We have calculated the fundamental mode thresholds and output power for Semiconductor Snail Laser (SSL) as a function of device parameters, i.e. coupler efficiency and output facets reflectivities. The coupler efficiency is the fraction of light transmitted between the waveguides in the directional couplers (DC). We have used a scattering matrix formulation and an analytical approximation to the optical susceptibility for the medium description, in order to determine the "optimal" coupling efficiency that maximizes the output power. Lasing action and good emission properties were therefore theoretically predicted.

AB - A new snail laser geometry is modelled and presented, exhibiting stable, unidirectional lasing at both 1550 nm and 808 nm. We have calculated the fundamental mode thresholds and output power for Semiconductor Snail Laser (SSL) as a function of device parameters, i.e. coupler efficiency and output facets reflectivities. The coupler efficiency is the fraction of light transmitted between the waveguides in the directional couplers (DC). We have used a scattering matrix formulation and an analytical approximation to the optical susceptibility for the medium description, in order to determine the "optimal" coupling efficiency that maximizes the output power. Lasing action and good emission properties were therefore theoretically predicted.

KW - semiconductor snail laser

KW - semiconductor lasers

KW - S-matrix theory

KW - laser beams

KW - laser modes

KW - optical directional couplers

KW - optical susceptibility

KW - optical waveguides

UR - http://www.scopus.com/inward/record.url?scp=70449578693&partnerID=8YFLogxK

U2 - 10.1109/CLEOE-EQEC.2009.5191743

DO - 10.1109/CLEOE-EQEC.2009.5191743

M3 - Conference contribution book

AN - SCOPUS:70449578693

SN - 9781424440795

BT - European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009.

PB - IEEE

CY - New York

ER -

Semiconductor snail laser

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