Semiconductor snail laser

M.J. Strain, A. Pérez-Serrano, G. Mezösi, G. Verschaffelt, A. Scirè, J. Danckaert, M. Sorel, S. Balle

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

A new snail laser geometry is modelled and presented, exhibiting stable, unidirectional lasing at both 1550 nm and 808 nm. We have calculated the fundamental mode thresholds and output power for Semiconductor Snail Laser (SSL) as a function of device parameters, i.e. coupler efficiency and output facets reflectivities. The coupler efficiency is the fraction of light transmitted between the waveguides in the directional couplers (DC). We have used a scattering matrix formulation and an analytical approximation to the optical susceptibility for the medium description, in order to determine the "optimal" coupling efficiency that maximizes the output power. Lasing action and good emission properties were therefore theoretically predicted.
Original languageEnglish
Title of host publicationEuropean Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009.
Place of PublicationNew York
PublisherIEEE
Number of pages1
ISBN (Print)9781424440795
DOIs
Publication statusPublished - 2009

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Keywords

  • semiconductor snail laser
  • semiconductor lasers
  • S-matrix theory
  • laser beams
  • laser modes
  • optical directional couplers
  • optical susceptibility
  • optical waveguides

Cite this

Strain, M. J., Pérez-Serrano, A., Mezösi, G., Verschaffelt, G., Scirè, A., Danckaert, J., ... Balle, S. (2009). Semiconductor snail laser. In European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. New York: IEEE. https://doi.org/10.1109/CLEOE-EQEC.2009.5191743