Semiconductor optical amplifier

C. Tombling (Inventor), A.H. Kean (Inventor), M.D. Dawson (Inventor), A. Kelly (Inventor), Kamelian Limited (Patent applicant) (Inventor)

Research output: Patent

Abstract

A semiconductor optical amplifier comprising an active gain region of the (In,Ga)(As,N) system is proposed, together with the use of (Ga,In)(As,N) as the base material for the fabrication of an SOA, and a semiconductor optical amplifier comprising (Ga,In)(As,N) as the base material. The N content of the (In,Ga)(As,N) can be varied along a dimension of the active region in the direction of propagation of light signals therein, to create a varying bandgap such as for mode expanders. The active region can be supplied by a source of electrical bias which is applied in segments along the dimension of the active region, the segments being capable of independent variation. This should allow channel equalisation of WDM signals to be performed dynamically. This scheme could also be used to equalise device parameters such as differential gain, saturation output power and linewidth enhancement factor across the amplification bandwidth.
LanguageEnglish
Patent numberWO/2002/056379
Publication statusPublished - 18 Jul 2002

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light amplifiers
bandwidth
saturation
fabrication
propagation
augmentation
output

Keywords

  • semiconductor optical amplifier
  • active gain
  • differential gain
  • saturation output power
  • linewidth enhancement factor
  • amplification bandwidth

Cite this

Tombling, C., Kean, A. H., Dawson, M. D., Kelly, A., & Kamelian Limited (Patent applicant) (2002). Semiconductor optical amplifier. (Patent No. WO/2002/056379).
Tombling, C. (Inventor) ; Kean, A.H. (Inventor) ; Dawson, M.D. (Inventor) ; Kelly, A. (Inventor) ; Kamelian Limited (Patent applicant) (Inventor). / Semiconductor optical amplifier. Patent No.: WO/2002/056379.
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title = "Semiconductor optical amplifier",
abstract = "A semiconductor optical amplifier comprising an active gain region of the (In,Ga)(As,N) system is proposed, together with the use of (Ga,In)(As,N) as the base material for the fabrication of an SOA, and a semiconductor optical amplifier comprising (Ga,In)(As,N) as the base material. The N content of the (In,Ga)(As,N) can be varied along a dimension of the active region in the direction of propagation of light signals therein, to create a varying bandgap such as for mode expanders. The active region can be supplied by a source of electrical bias which is applied in segments along the dimension of the active region, the segments being capable of independent variation. This should allow channel equalisation of WDM signals to be performed dynamically. This scheme could also be used to equalise device parameters such as differential gain, saturation output power and linewidth enhancement factor across the amplification bandwidth.",
keywords = "semiconductor optical amplifier, active gain, differential gain, saturation output power, linewidth enhancement factor, amplification bandwidth",
author = "C. Tombling and A.H. Kean and M.D. Dawson and A. Kelly and {Kamelian Limited (Patent applicant)}",
year = "2002",
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Tombling, C, Kean, AH, Dawson, MD, Kelly, A & Kamelian Limited (Patent applicant) 2002, Semiconductor optical amplifier, Patent No. WO/2002/056379.

Semiconductor optical amplifier. / Tombling, C. (Inventor); Kean, A.H. (Inventor); Dawson, M.D. (Inventor); Kelly, A. (Inventor); Kamelian Limited (Patent applicant) (Inventor).

Patent No.: WO/2002/056379.

Research output: Patent

TY - PAT

T1 - Semiconductor optical amplifier

AU - Tombling, C.

AU - Kean, A.H.

AU - Dawson, M.D.

AU - Kelly, A.

AU - Kamelian Limited (Patent applicant)

PY - 2002/7/18

Y1 - 2002/7/18

N2 - A semiconductor optical amplifier comprising an active gain region of the (In,Ga)(As,N) system is proposed, together with the use of (Ga,In)(As,N) as the base material for the fabrication of an SOA, and a semiconductor optical amplifier comprising (Ga,In)(As,N) as the base material. The N content of the (In,Ga)(As,N) can be varied along a dimension of the active region in the direction of propagation of light signals therein, to create a varying bandgap such as for mode expanders. The active region can be supplied by a source of electrical bias which is applied in segments along the dimension of the active region, the segments being capable of independent variation. This should allow channel equalisation of WDM signals to be performed dynamically. This scheme could also be used to equalise device parameters such as differential gain, saturation output power and linewidth enhancement factor across the amplification bandwidth.

AB - A semiconductor optical amplifier comprising an active gain region of the (In,Ga)(As,N) system is proposed, together with the use of (Ga,In)(As,N) as the base material for the fabrication of an SOA, and a semiconductor optical amplifier comprising (Ga,In)(As,N) as the base material. The N content of the (In,Ga)(As,N) can be varied along a dimension of the active region in the direction of propagation of light signals therein, to create a varying bandgap such as for mode expanders. The active region can be supplied by a source of electrical bias which is applied in segments along the dimension of the active region, the segments being capable of independent variation. This should allow channel equalisation of WDM signals to be performed dynamically. This scheme could also be used to equalise device parameters such as differential gain, saturation output power and linewidth enhancement factor across the amplification bandwidth.

KW - semiconductor optical amplifier

KW - active gain

KW - differential gain

KW - saturation output power

KW - linewidth enhancement factor

KW - amplification bandwidth

UR - http://www.wipo.int/pctdb/en/wo.jsp?wo=2002056379

M3 - Patent

M1 - WO/2002/056379

ER -

Tombling C, Kean AH, Dawson MD, Kelly A, Kamelian Limited (Patent applicant), inventors. Semiconductor optical amplifier. WO/2002/056379. 2002 Jul 18.