Semiconductor mode-locked lasers with integrated dispersion control

M.J. Strain, P.M. Stolarz, M. Sorel

Research output: Contribution to conferencePaper

Abstract

Semiconductor mode-locked lasers (MLL) often make use of distributed Bragg reflectors (DBRs) as one of the cavity reflectors, allowing both high peak reflectivity, and the central wavelength selection necessary for many applications[1,2]. However, although the passive filter bandwidth of these reflectors can be up to a few nanometres, the typical mode-locked 3dB bandwidth is significantly smaller, as shown in Fig.1(a). This bandwidth truncation leads directly to pulses with larger temporal widths than those generated in Fabry-Pérot (FP) type devices where the bandwidth can be an order of magnitude larger. Furthermore, the generated pulse-width from DBR MLLs is highly dependent on the injection current conditions, unlike their FP counterparts.

Conference

Conference2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
CountryGermany
CityMunich
Period22/05/1126/05/11

Fingerprint

bandwidth
Bragg reflectors
reflectors
lasers
pulse duration
injection
reflectance
filters
cavities
pulses
approximation
wavelengths

Keywords

  • semiconductor
  • mode-locked lasers
  • integrated dispersion control

Cite this

Strain, M. J., Stolarz, P. M., & Sorel, M. (2011). Semiconductor mode-locked lasers with integrated dispersion control. Paper presented at 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, Munich, Germany. https://doi.org/10.1109/CLEOE.2011.5942586
Strain, M.J. ; Stolarz, P.M. ; Sorel, M. / Semiconductor mode-locked lasers with integrated dispersion control. Paper presented at 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, Munich, Germany.1 p.
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author = "M.J. Strain and P.M. Stolarz and M. Sorel",
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Strain, MJ, Stolarz, PM & Sorel, M 2011, 'Semiconductor mode-locked lasers with integrated dispersion control' Paper presented at 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, Munich, Germany, 22/05/11 - 26/05/11, . https://doi.org/10.1109/CLEOE.2011.5942586

Semiconductor mode-locked lasers with integrated dispersion control. / Strain, M.J.; Stolarz, P.M.; Sorel, M.

2011. Paper presented at 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, Munich, Germany.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Semiconductor mode-locked lasers with integrated dispersion control

AU - Strain, M.J.

AU - Stolarz, P.M.

AU - Sorel, M.

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Semiconductor mode-locked lasers (MLL) often make use of distributed Bragg reflectors (DBRs) as one of the cavity reflectors, allowing both high peak reflectivity, and the central wavelength selection necessary for many applications[1,2]. However, although the passive filter bandwidth of these reflectors can be up to a few nanometres, the typical mode-locked 3dB bandwidth is significantly smaller, as shown in Fig.1(a). This bandwidth truncation leads directly to pulses with larger temporal widths than those generated in Fabry-Pérot (FP) type devices where the bandwidth can be an order of magnitude larger. Furthermore, the generated pulse-width from DBR MLLs is highly dependent on the injection current conditions, unlike their FP counterparts.

AB - Semiconductor mode-locked lasers (MLL) often make use of distributed Bragg reflectors (DBRs) as one of the cavity reflectors, allowing both high peak reflectivity, and the central wavelength selection necessary for many applications[1,2]. However, although the passive filter bandwidth of these reflectors can be up to a few nanometres, the typical mode-locked 3dB bandwidth is significantly smaller, as shown in Fig.1(a). This bandwidth truncation leads directly to pulses with larger temporal widths than those generated in Fabry-Pérot (FP) type devices where the bandwidth can be an order of magnitude larger. Furthermore, the generated pulse-width from DBR MLLs is highly dependent on the injection current conditions, unlike their FP counterparts.

KW - semiconductor

KW - mode-locked lasers

KW - integrated dispersion control

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Strain MJ, Stolarz PM, Sorel M. Semiconductor mode-locked lasers with integrated dispersion control. 2011. Paper presented at 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, Munich, Germany. https://doi.org/10.1109/CLEOE.2011.5942586