Semiconductor mode-locked lasers with integrated dispersion control

M.J. Strain; P.M. Stolarz; M. Sorel

doi:10.1109/CLEOE.2011.5942586

Semiconductor mode-locked lasers with integrated dispersion control

M.J. Strain, P.M. Stolarz, M. Sorel

Research output: Contribution to conference › Paper

Abstract

Semiconductor mode-locked lasers (MLL) often make use of distributed Bragg reflectors (DBRs) as one of the cavity reflectors, allowing both high peak reflectivity, and the central wavelength selection necessary for many applications[1,2]. However, although the passive filter bandwidth of these reflectors can be up to a few nanometres, the typical mode-locked 3dB bandwidth is significantly smaller, as shown in Fig.1(a). This bandwidth truncation leads directly to pulses with larger temporal widths than those generated in Fabry-Pérot (FP) type devices where the bandwidth can be an order of magnitude larger. Furthermore, the generated pulse-width from DBR MLLs is highly dependent on the injection current conditions, unlike their FP counterparts.

Original language	English
Number of pages	1
DOIs	https://doi.org/10.1109/CLEOE.2011.5942586
Publication status	Published - 1 Jan 2011
Event	2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 - Munich, Germany Duration: 22 May 2011 → 26 May 2011

Conference

Conference	2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
Country/Territory	Germany
City	Munich
Period	22/05/11 → 26/05/11

Keywords

semiconductor
mode-locked lasers
integrated dispersion control

Access to Document

10.1109/CLEOE.2011.5942586

Cite this

@conference{1aec9f7b2f4c45949e003b724b355d4f,

title = "Semiconductor mode-locked lasers with integrated dispersion control",

abstract = "Semiconductor mode-locked lasers (MLL) often make use of distributed Bragg reflectors (DBRs) as one of the cavity reflectors, allowing both high peak reflectivity, and the central wavelength selection necessary for many applications[1,2]. However, although the passive filter bandwidth of these reflectors can be up to a few nanometres, the typical mode-locked 3dB bandwidth is significantly smaller, as shown in Fig.1(a). This bandwidth truncation leads directly to pulses with larger temporal widths than those generated in Fabry-P{\'e}rot (FP) type devices where the bandwidth can be an order of magnitude larger. Furthermore, the generated pulse-width from DBR MLLs is highly dependent on the injection current conditions, unlike their FP counterparts. ",

keywords = "semiconductor, mode-locked lasers, integrated dispersion control",

author = "M.J. Strain and P.M. Stolarz and M. Sorel",

year = "2011",

month = jan,

day = "1",

doi = "10.1109/CLEOE.2011.5942586",

language = "English",

note = "2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 ; Conference date: 22-05-2011 Through 26-05-2011",

}

TY - CONF

T1 - Semiconductor mode-locked lasers with integrated dispersion control

AU - Strain, M.J.

AU - Stolarz, P.M.

AU - Sorel, M.

PY - 2011/1/1

Y1 - 2011/1/1

N2 - Semiconductor mode-locked lasers (MLL) often make use of distributed Bragg reflectors (DBRs) as one of the cavity reflectors, allowing both high peak reflectivity, and the central wavelength selection necessary for many applications[1,2]. However, although the passive filter bandwidth of these reflectors can be up to a few nanometres, the typical mode-locked 3dB bandwidth is significantly smaller, as shown in Fig.1(a). This bandwidth truncation leads directly to pulses with larger temporal widths than those generated in Fabry-Pérot (FP) type devices where the bandwidth can be an order of magnitude larger. Furthermore, the generated pulse-width from DBR MLLs is highly dependent on the injection current conditions, unlike their FP counterparts.

AB - Semiconductor mode-locked lasers (MLL) often make use of distributed Bragg reflectors (DBRs) as one of the cavity reflectors, allowing both high peak reflectivity, and the central wavelength selection necessary for many applications[1,2]. However, although the passive filter bandwidth of these reflectors can be up to a few nanometres, the typical mode-locked 3dB bandwidth is significantly smaller, as shown in Fig.1(a). This bandwidth truncation leads directly to pulses with larger temporal widths than those generated in Fabry-Pérot (FP) type devices where the bandwidth can be an order of magnitude larger. Furthermore, the generated pulse-width from DBR MLLs is highly dependent on the injection current conditions, unlike their FP counterparts.

KW - semiconductor

KW - mode-locked lasers

KW - integrated dispersion control

UR - http://www.scopus.com/inward/record.url?scp=80052290305&partnerID=8YFLogxK

UR - http://2011.cleoeurope.org/

U2 - 10.1109/CLEOE.2011.5942586

DO - 10.1109/CLEOE.2011.5942586

M3 - Paper

AN - SCOPUS:80052290305

T2 - 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

Y2 - 22 May 2011 through 26 May 2011

ER -

Semiconductor mode-locked lasers with integrated dispersion control

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this