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THE quaternary semiconductor system Ga In N As has been the subject of considerable recent interest. The ability to vary the nitrogen (N) and indium (In) concentrations permits the bandgap energy to be tailored for applications in the important 1200-1600 nm spectral region, via strong band-bowing, while controlling the lattice constant to permit pseudomorphic growth on a GaAs substrate . GaInNAs is proven for light emission from vertical-cavity surface-emitting laser and vertical-external-cavity surface-emitting laser devices operating near 1300 nm -, but it is also a potentially important material for developing saturable absorber devices. Of particular relevance are the saturable Bragg reflectors (SBRs) and semiconductor saturable absorbing mirrors for the passive mode-locking of near-infrared solid-state lasers operating in the 1200-1600 nm region.
|Publication status||Published - Jan 2007|
|Event||Advanced Solid State Photonics Conference, ASSP 2007 - Vancouver, Canada|
Duration: 28 Jan 2007 → 31 Jan 2007
|Conference||Advanced Solid State Photonics Conference, ASSP 2007|
|Period||28/01/07 → 31/01/07|
- Bragg reflector
Calvez, S., Burns, D. & Dawson, M.
1/09/07 → 30/09/11
Leburn, C. G., McRobbie, A. D., Lagatsky, A. A., Brown, C. T. A., Sibbett, W., Calvez, S., ... Aers, G. C. (2007). Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector. Paper presented at Advanced Solid State Photonics Conference, ASSP 2007, Vancouver, Canada, .