Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector

C.G. Leburn; A.D. McRobbie; A.A. Lagatsky; C.T.A. Brown; W. Sibbett; S. Calvez; D. Burns; M.D. Dawson; J.A. Gupta; G.C. Aers

Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector

C.G. Leburn, A.D. McRobbie, A.A. Lagatsky, C.T.A. Brown, W. Sibbett, S. Calvez, D. Burns, M.D. Dawson, J.A. Gupta, G.C. Aers

Research output: Contribution to conference › Paper › peer-review

Abstract

THE quaternary semiconductor system Ga In N As has been the subject of considerable recent interest. The ability to vary the nitrogen (N) and indium (In) concentrations permits the bandgap energy to be tailored for applications in the important 1200-1600 nm spectral region, via strong band-bowing, while controlling the lattice constant to permit pseudomorphic growth on a GaAs substrate [1]. GaInNAs is proven for light emission from vertical-cavity surface-emitting laser and vertical-external-cavity surface-emitting laser devices operating near 1300 nm [2]-[4], but it is also a potentially important material for developing saturable absorber devices. Of particular relevance are the saturable Bragg reflectors (SBRs) and semiconductor saturable absorbing mirrors for the passive mode-locking of near-infrared solid-state lasers operating in the 1200-1600 nm region.

Original language	English
Publication status	Published - Jan 2007
Event	Advanced Solid State Photonics Conference, ASSP 2007 - Vancouver, Canada Duration: 28 Jan 2007 → 31 Jan 2007

Conference

Conference	Advanced Solid State Photonics Conference, ASSP 2007
City	Vancouver, Canada
Period	28/01/07 → 31/01/07

Keywords

optics
photonics
GaInNAs
Bragg reflector

Cite this

@conference{444a3d15246544b490a7d1fee3614724,

title = "Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector",

abstract = "THE quaternary semiconductor system Ga In N As has been the subject of considerable recent interest. The ability to vary the nitrogen (N) and indium (In) concentrations permits the bandgap energy to be tailored for applications in the important 1200-1600 nm spectral region, via strong band-bowing, while controlling the lattice constant to permit pseudomorphic growth on a GaAs substrate [1]. GaInNAs is proven for light emission from vertical-cavity surface-emitting laser and vertical-external-cavity surface-emitting laser devices operating near 1300 nm [2]-[4], but it is also a potentially important material for developing saturable absorber devices. Of particular relevance are the saturable Bragg reflectors (SBRs) and semiconductor saturable absorbing mirrors for the passive mode-locking of near-infrared solid-state lasers operating in the 1200-1600 nm region.",

keywords = "optics, photonics, GaInNAs, Bragg reflector",

author = "C.G. Leburn and A.D. McRobbie and A.A. Lagatsky and C.T.A. Brown and W. Sibbett and S. Calvez and D. Burns and M.D. Dawson and J.A. Gupta and G.C. Aers",

year = "2007",

month = jan,

language = "English",

note = "Advanced Solid State Photonics Conference, ASSP 2007 ; Conference date: 28-01-2007 Through 31-01-2007",

}

TY - CONF

T1 - Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector

AU - Leburn, C.G.

AU - McRobbie, A.D.

AU - Lagatsky, A.A.

AU - Brown, C.T.A.

AU - Sibbett, W.

AU - Calvez, S.

AU - Burns, D.

AU - Dawson, M.D.

AU - Gupta, J.A.

AU - Aers, G.C.

PY - 2007/1

Y1 - 2007/1

N2 - THE quaternary semiconductor system Ga In N As has been the subject of considerable recent interest. The ability to vary the nitrogen (N) and indium (In) concentrations permits the bandgap energy to be tailored for applications in the important 1200-1600 nm spectral region, via strong band-bowing, while controlling the lattice constant to permit pseudomorphic growth on a GaAs substrate [1]. GaInNAs is proven for light emission from vertical-cavity surface-emitting laser and vertical-external-cavity surface-emitting laser devices operating near 1300 nm [2]-[4], but it is also a potentially important material for developing saturable absorber devices. Of particular relevance are the saturable Bragg reflectors (SBRs) and semiconductor saturable absorbing mirrors for the passive mode-locking of near-infrared solid-state lasers operating in the 1200-1600 nm region.

AB - THE quaternary semiconductor system Ga In N As has been the subject of considerable recent interest. The ability to vary the nitrogen (N) and indium (In) concentrations permits the bandgap energy to be tailored for applications in the important 1200-1600 nm spectral region, via strong band-bowing, while controlling the lattice constant to permit pseudomorphic growth on a GaAs substrate [1]. GaInNAs is proven for light emission from vertical-cavity surface-emitting laser and vertical-external-cavity surface-emitting laser devices operating near 1300 nm [2]-[4], but it is also a potentially important material for developing saturable absorber devices. Of particular relevance are the saturable Bragg reflectors (SBRs) and semiconductor saturable absorbing mirrors for the passive mode-locking of near-infrared solid-state lasers operating in the 1200-1600 nm region.

KW - optics

KW - photonics

KW - GaInNAs

KW - Bragg reflector

UR - http://www.osa.org/meetings/archives/2007/ASSP/ASSP_2007_Final_Archive.pdf

M3 - Paper

T2 - Advanced Solid State Photonics Conference, ASSP 2007

Y2 - 28 January 2007 through 31 January 2007

ER -

Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector

Abstract

Conference

Keywords

Other files and links

Fingerprint

MUSIC: MODULAR ULTRAFAST SOURCES

ADVANCED SOLID STATE LASER SOURCES AND SYSTEMS

Cite this

Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector

Abstract

Conference

Keywords

Other files and links

Fingerprint

Projects

MUSIC: MODULAR ULTRAFAST SOURCES

ADVANCED SOLID STATE LASER SOURCES AND SYSTEMS

Cite this