Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector

C.G. Leburn, A.D. McRobbie, A.A. Lagatsky, C.T.A. Brown, W. Sibbett, S. Calvez, D. Burns, M.D. Dawson, J.A. Gupta, G.C. Aers

Research output: Contribution to conferencePaper

Abstract

THE quaternary semiconductor system Ga In N As has been the subject of considerable recent interest. The ability to vary the nitrogen (N) and indium (In) concentrations permits the bandgap energy to be tailored for applications in the important 1200-1600 nm spectral region, via strong band-bowing, while controlling the lattice constant to permit pseudomorphic growth on a GaAs substrate [1]. GaInNAs is proven for light emission from vertical-cavity surface-emitting laser and vertical-external-cavity surface-emitting laser devices operating near 1300 nm [2]-[4], but it is also a potentially important material for developing saturable absorber devices. Of particular relevance are the saturable Bragg reflectors (SBRs) and semiconductor saturable absorbing mirrors for the passive mode-locking of near-infrared solid-state lasers operating in the 1200-1600 nm region.

Conference

ConferenceAdvanced Solid State Photonics Conference, ASSP 2007
CityVancouver, Canada
Period28/01/0731/01/07

Fingerprint

laser modes
Bragg reflectors
surface emitting lasers
indium
YAG lasers
cavities
solid state lasers
infrared lasers
locking
light emission
absorbers
mirrors
nitrogen
energy

Keywords

  • optics
  • photonics
  • GaInNAs
  • Bragg reflector

Cite this

Leburn, C. G., McRobbie, A. D., Lagatsky, A. A., Brown, C. T. A., Sibbett, W., Calvez, S., ... Aers, G. C. (2007). Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector. Paper presented at Advanced Solid State Photonics Conference, ASSP 2007, Vancouver, Canada, .
Leburn, C.G. ; McRobbie, A.D. ; Lagatsky, A.A. ; Brown, C.T.A. ; Sibbett, W. ; Calvez, S. ; Burns, D. ; Dawson, M.D. ; Gupta, J.A. ; Aers, G.C. / Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector. Paper presented at Advanced Solid State Photonics Conference, ASSP 2007, Vancouver, Canada, .
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title = "Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector",
abstract = "THE quaternary semiconductor system Ga In N As has been the subject of considerable recent interest. The ability to vary the nitrogen (N) and indium (In) concentrations permits the bandgap energy to be tailored for applications in the important 1200-1600 nm spectral region, via strong band-bowing, while controlling the lattice constant to permit pseudomorphic growth on a GaAs substrate [1]. GaInNAs is proven for light emission from vertical-cavity surface-emitting laser and vertical-external-cavity surface-emitting laser devices operating near 1300 nm [2]-[4], but it is also a potentially important material for developing saturable absorber devices. Of particular relevance are the saturable Bragg reflectors (SBRs) and semiconductor saturable absorbing mirrors for the passive mode-locking of near-infrared solid-state lasers operating in the 1200-1600 nm region.",
keywords = "optics, photonics, GaInNAs, Bragg reflector",
author = "C.G. Leburn and A.D. McRobbie and A.A. Lagatsky and C.T.A. Brown and W. Sibbett and S. Calvez and D. Burns and M.D. Dawson and J.A. Gupta and G.C. Aers",
year = "2007",
month = "1",
language = "English",
note = "Advanced Solid State Photonics Conference, ASSP 2007 ; Conference date: 28-01-2007 Through 31-01-2007",

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Leburn, CG, McRobbie, AD, Lagatsky, AA, Brown, CTA, Sibbett, W, Calvez, S, Burns, D, Dawson, MD, Gupta, JA & Aers, GC 2007, 'Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector' Paper presented at Advanced Solid State Photonics Conference, ASSP 2007, Vancouver, Canada, 28/01/07 - 31/01/07, .

Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector. / Leburn, C.G.; McRobbie, A.D.; Lagatsky, A.A.; Brown, C.T.A.; Sibbett, W.; Calvez, S.; Burns, D.; Dawson, M.D.; Gupta, J.A.; Aers, G.C.

2007. Paper presented at Advanced Solid State Photonics Conference, ASSP 2007, Vancouver, Canada, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector

AU - Leburn, C.G.

AU - McRobbie, A.D.

AU - Lagatsky, A.A.

AU - Brown, C.T.A.

AU - Sibbett, W.

AU - Calvez, S.

AU - Burns, D.

AU - Dawson, M.D.

AU - Gupta, J.A.

AU - Aers, G.C.

PY - 2007/1

Y1 - 2007/1

N2 - THE quaternary semiconductor system Ga In N As has been the subject of considerable recent interest. The ability to vary the nitrogen (N) and indium (In) concentrations permits the bandgap energy to be tailored for applications in the important 1200-1600 nm spectral region, via strong band-bowing, while controlling the lattice constant to permit pseudomorphic growth on a GaAs substrate [1]. GaInNAs is proven for light emission from vertical-cavity surface-emitting laser and vertical-external-cavity surface-emitting laser devices operating near 1300 nm [2]-[4], but it is also a potentially important material for developing saturable absorber devices. Of particular relevance are the saturable Bragg reflectors (SBRs) and semiconductor saturable absorbing mirrors for the passive mode-locking of near-infrared solid-state lasers operating in the 1200-1600 nm region.

AB - THE quaternary semiconductor system Ga In N As has been the subject of considerable recent interest. The ability to vary the nitrogen (N) and indium (In) concentrations permits the bandgap energy to be tailored for applications in the important 1200-1600 nm spectral region, via strong band-bowing, while controlling the lattice constant to permit pseudomorphic growth on a GaAs substrate [1]. GaInNAs is proven for light emission from vertical-cavity surface-emitting laser and vertical-external-cavity surface-emitting laser devices operating near 1300 nm [2]-[4], but it is also a potentially important material for developing saturable absorber devices. Of particular relevance are the saturable Bragg reflectors (SBRs) and semiconductor saturable absorbing mirrors for the passive mode-locking of near-infrared solid-state lasers operating in the 1200-1600 nm region.

KW - optics

KW - photonics

KW - GaInNAs

KW - Bragg reflector

UR - http://www.osa.org/meetings/archives/2007/ASSP/ASSP_2007_Final_Archive.pdf

M3 - Paper

ER -

Leburn CG, McRobbie AD, Lagatsky AA, Brown CTA, Sibbett W, Calvez S et al. Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector. 2007. Paper presented at Advanced Solid State Photonics Conference, ASSP 2007, Vancouver, Canada, .