Abstract
The vibrational properties of interstitial silane ( SiH 4 ) i and silyl ( SiH 3 ) i molecules in crystalline silicon are calculated using a first-principle, cluster-based, spin-polarized local-density method. The Si-H stretch modes are found to be redshifted by ∼ 300 cm − 1 from those of the isolated molecule, which lie around 2200 cm − 1 . These results refute recent suggestions that modes observed around 2200 cm − 1 , and previously assigned to hydrogenated vacancy defects, are due to these interstitial molecules.
Original language | English |
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Article number | 15729 |
Number of pages | 4 |
Journal | Physical Review B (Condensed Matter) |
Volume | 59 |
Issue number | 24 |
DOIs | |
Publication status | Published - 15 Jun 1999 |
Keywords
- crystalline silicon
- molecules
- Si-H stretch modes
- isolated molecule