Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexylthienothiophene units

Greg J. McEntee, Filipe Vilela, Peter Skabara, Thomas D. Anthopoulos, John G. Labram, Steve Tierney, Ross W. Harrington, William Clegg

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Abstract

The synthesis of a new conjugated material is reported; BDHTT–BBT features a central electron-deficient benzobisthiazole capped with two 3,6-dihexyl-thieno[3,2-b]thiophenes. Cyclic voltammetry was used to determine the HOMO (−5.7 eV) and LUMO (−2.9 eV) levels. The solid-state properties of the compound were investigated by X-ray diffraction on single-crystal and thin-film samples. OFETs were constructed with vacuum deposited films of BDHTT–BBT. The films displayed phase transitions over a range of temperatures and the morphology of the films affected the charge transport properties of the films. The maximum hole mobility observed from bottom-contact, top-gate devices was 3 × 10−3 cm2 V−1 s−1, with an on/off ratio of 104–105 and a threshold voltage of −42 V. The morphological and self-assembly characteristics versus electronic properties are discussed for future improvement of OFET devices.
Original languageEnglish
Pages (from-to)2091-2097
Number of pages7
JournalJournal of Materials Chemistry
Volume21
Issue number7
Early online date8 Nov 2010
DOIs
Publication statusPublished - 2011

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Keywords

  • self-assembly and charge transport properties
  • benzobisthiazole
  • end-capped
  • dihexyl thienothiophene units
  • new conjugated material
  • solid-state properties
  • TIC - Bionanotechnology

Cite this

McEntee, G. J., Vilela, F., Skabara, P., Anthopoulos, T. D., Labram, J. G., Tierney, S., ... Clegg, W. (2011). Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexylthienothiophene units. Journal of Materials Chemistry, 21(7), 2091-2097. https://doi.org/10.1039/c0jm02607g