Selectively excited photoluminescence from Eu- implanted GaN

K. Wang, R.W. Martin, K.P. O'Donnell, V. Katchkanov, E. Nogales, K. Lorenz, E. Alves, S. Ruffenach, O. Briot

Research output: Contribution to journalArticle

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Abstract

The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 °C. Photoluminescence (PL) and PL excitation (PLE) studies reveal a variety of Eu centers with different excitation mechanisms. High-resolution PL spectra at low temperature clearly show that emission lines ascribed to 5D0-7F2 (~622 nm), 5D0-7F3 (~664 nm), and 5D0-7F1 (~602 nm) transitions each consist of several peaks. PL excitation spectra of the spectrally resolved components of the 5D0-7F2 multiplet contain contributions from above-bandedge absorption by the GaN host, a GaN exciton absorption at 356 nm, and a broad subedge absorption band centred at ~385 nm. Marked differences in the shape of the 5D0-7F2 PL multiplet are demonstrated by selective excitation via the continuum/exciton states and the below gap absorption band. The four strongest lines of the multiplet are shown to consist of two pairs due to different Eu3+ centers with different excitation mechanisms.
LanguageEnglish
Article number112107
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number11
DOIs
Publication statusPublished - 8 Sep 2005

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photoluminescence
excitation
fine structure
excitons
absorption spectra
caps
metalorganic chemical vapor deposition
luminescence
continuums
annealing
high resolution
ions

Keywords

  • photoluminescence
  • Eu- implanted GaN
  • organic chemical vapor deposition
  • nanoscience

Cite this

Wang, K. ; Martin, R.W. ; O'Donnell, K.P. ; Katchkanov, V. ; Nogales, E. ; Lorenz, K. ; Alves, E. ; Ruffenach, S. ; Briot, O. / Selectively excited photoluminescence from Eu- implanted GaN. In: Applied Physics Letters. 2005 ; Vol. 87, No. 11.
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title = "Selectively excited photoluminescence from Eu- implanted GaN",
abstract = "The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 °C. Photoluminescence (PL) and PL excitation (PLE) studies reveal a variety of Eu centers with different excitation mechanisms. High-resolution PL spectra at low temperature clearly show that emission lines ascribed to 5D0-7F2 (~622 nm), 5D0-7F3 (~664 nm), and 5D0-7F1 (~602 nm) transitions each consist of several peaks. PL excitation spectra of the spectrally resolved components of the 5D0-7F2 multiplet contain contributions from above-bandedge absorption by the GaN host, a GaN exciton absorption at 356 nm, and a broad subedge absorption band centred at ~385 nm. Marked differences in the shape of the 5D0-7F2 PL multiplet are demonstrated by selective excitation via the continuum/exciton states and the below gap absorption band. The four strongest lines of the multiplet are shown to consist of two pairs due to different Eu3+ centers with different excitation mechanisms.",
keywords = "photoluminescence, Eu- implanted GaN, organic chemical vapor deposition, nanoscience",
author = "K. Wang and R.W. Martin and K.P. O'Donnell and V. Katchkanov and E. Nogales and K. Lorenz and E. Alves and S. Ruffenach and O. Briot",
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Wang, K, Martin, RW, O'Donnell, KP, Katchkanov, V, Nogales, E, Lorenz, K, Alves, E, Ruffenach, S & Briot, O 2005, 'Selectively excited photoluminescence from Eu- implanted GaN' Applied Physics Letters, vol. 87, no. 11, 112107 . https://doi.org/10.1063/1.2045551

Selectively excited photoluminescence from Eu- implanted GaN. / Wang, K.; Martin, R.W.; O'Donnell, K.P.; Katchkanov, V.; Nogales, E.; Lorenz, K.; Alves, E.; Ruffenach, S.; Briot, O.

In: Applied Physics Letters, Vol. 87, No. 11, 112107 , 08.09.2005.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Selectively excited photoluminescence from Eu- implanted GaN

AU - Wang, K.

AU - Martin, R.W.

AU - O'Donnell, K.P.

AU - Katchkanov, V.

AU - Nogales, E.

AU - Lorenz, K.

AU - Alves, E.

AU - Ruffenach, S.

AU - Briot, O.

PY - 2005/9/8

Y1 - 2005/9/8

N2 - The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 °C. Photoluminescence (PL) and PL excitation (PLE) studies reveal a variety of Eu centers with different excitation mechanisms. High-resolution PL spectra at low temperature clearly show that emission lines ascribed to 5D0-7F2 (~622 nm), 5D0-7F3 (~664 nm), and 5D0-7F1 (~602 nm) transitions each consist of several peaks. PL excitation spectra of the spectrally resolved components of the 5D0-7F2 multiplet contain contributions from above-bandedge absorption by the GaN host, a GaN exciton absorption at 356 nm, and a broad subedge absorption band centred at ~385 nm. Marked differences in the shape of the 5D0-7F2 PL multiplet are demonstrated by selective excitation via the continuum/exciton states and the below gap absorption band. The four strongest lines of the multiplet are shown to consist of two pairs due to different Eu3+ centers with different excitation mechanisms.

AB - The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 °C. Photoluminescence (PL) and PL excitation (PLE) studies reveal a variety of Eu centers with different excitation mechanisms. High-resolution PL spectra at low temperature clearly show that emission lines ascribed to 5D0-7F2 (~622 nm), 5D0-7F3 (~664 nm), and 5D0-7F1 (~602 nm) transitions each consist of several peaks. PL excitation spectra of the spectrally resolved components of the 5D0-7F2 multiplet contain contributions from above-bandedge absorption by the GaN host, a GaN exciton absorption at 356 nm, and a broad subedge absorption band centred at ~385 nm. Marked differences in the shape of the 5D0-7F2 PL multiplet are demonstrated by selective excitation via the continuum/exciton states and the below gap absorption band. The four strongest lines of the multiplet are shown to consist of two pairs due to different Eu3+ centers with different excitation mechanisms.

KW - photoluminescence

KW - Eu- implanted GaN

KW - organic chemical vapor deposition

KW - nanoscience

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DO - 10.1063/1.2045551

M3 - Article

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JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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M1 - 112107

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