Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing

R. Macaluso; H.D. Sun; M.D. Dawson; F. Robert; A.C. Bryce; J.H. Marsh; H. Riechert

doi:10.1063/1.1583865

Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing

R. Macaluso, H.D. Sun, M.D. Dawson, F. Robert, A.C. Bryce, J.H. Marsh, H. Riechert

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We report an investigation of selective quantum-well intermixing (QWI) in 1.3-µm GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO2-capped samples, while uncapped and SiO2-capped samples by plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications.

Original language	English
Pages (from-to)	4259-4261
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	24
DOIs	https://doi.org/10.1063/1.1583865
Publication status	Published - 16 Jun 2003

Keywords

bandgap
GaInNAs
GaAs
quantum well intermixing

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10.1063/1.1583865

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@article{710bb9765fdf4975811cdaf4e4932b49,

title = "Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing",

abstract = "We report an investigation of selective quantum-well intermixing (QWI) in 1.3-µm GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO2-capped samples, while uncapped and SiO2-capped samples by plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications.",

keywords = "bandgap, GaInNAs, GaAs, quantum well intermixing",

author = "R. Macaluso and H.D. Sun and M.D. Dawson and F. Robert and A.C. Bryce and J.H. Marsh and H. Riechert",

year = "2003",

month = jun,

day = "16",

doi = "10.1063/1.1583865",

language = "English",

volume = "82",

pages = "4259--4261",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing

AU - Macaluso, R.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Robert, F.

AU - Bryce, A.C.

AU - Marsh, J.H.

AU - Riechert, H.

PY - 2003/6/16

Y1 - 2003/6/16

N2 - We report an investigation of selective quantum-well intermixing (QWI) in 1.3-µm GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO2-capped samples, while uncapped and SiO2-capped samples by plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications.

AB - We report an investigation of selective quantum-well intermixing (QWI) in 1.3-µm GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO2-capped samples, while uncapped and SiO2-capped samples by plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications.

KW - bandgap

KW - GaInNAs

KW - GaAs

KW - quantum well intermixing

U2 - 10.1063/1.1583865

DO - 10.1063/1.1583865

M3 - Article

SN - 0003-6951

VL - 82

SP - 4259

EP - 4261

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing

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Keywords

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