Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing

R. Macaluso, H.D. Sun, M.D. Dawson, F. Robert, A.C. Bryce, J.H. Marsh, H. Riechert

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report an investigation of selective quantum-well intermixing (QWI) in 1.3-µm GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO2-capped samples, while uncapped and SiO2-capped samples by plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications.
LanguageEnglish
Pages4259-4261
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number24
DOIs
Publication statusPublished - 16 Jun 2003

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quantum wells
photoluminescence
shift
caps
secondary ion mass spectrometry
integrated circuits
tuning
vapor deposition
photonics
silicon dioxide
annealing
room temperature
spectroscopy
excitation

Keywords

  • bandgap
  • GaInNAs
  • GaAs
  • quantum well intermixing

Cite this

Macaluso, R., Sun, H. D., Dawson, M. D., Robert, F., Bryce, A. C., Marsh, J. H., & Riechert, H. (2003). Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing. Applied Physics Letters, 82(24), 4259-4261. https://doi.org/10.1063/1.1583865
Macaluso, R. ; Sun, H.D. ; Dawson, M.D. ; Robert, F. ; Bryce, A.C. ; Marsh, J.H. ; Riechert, H. / Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing. In: Applied Physics Letters. 2003 ; Vol. 82, No. 24. pp. 4259-4261.
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Macaluso, R, Sun, HD, Dawson, MD, Robert, F, Bryce, AC, Marsh, JH & Riechert, H 2003, 'Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing' Applied Physics Letters, vol. 82, no. 24, pp. 4259-4261. https://doi.org/10.1063/1.1583865

Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing. / Macaluso, R.; Sun, H.D.; Dawson, M.D.; Robert, F.; Bryce, A.C.; Marsh, J.H.; Riechert, H.

In: Applied Physics Letters, Vol. 82, No. 24, 16.06.2003, p. 4259-4261.

Research output: Contribution to journalArticle

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T1 - Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing

AU - Macaluso, R.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Robert, F.

AU - Bryce, A.C.

AU - Marsh, J.H.

AU - Riechert, H.

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N2 - We report an investigation of selective quantum-well intermixing (QWI) in 1.3-µm GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO2-capped samples, while uncapped and SiO2-capped samples by plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications.

AB - We report an investigation of selective quantum-well intermixing (QWI) in 1.3-µm GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO2-capped samples, while uncapped and SiO2-capped samples by plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications.

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