Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing

R. Macaluso, H.D. Sun, M.D. Dawson, F. Robert, A.C. Bryce, J.H. Marsh, H. Riechert

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Abstract

We report an investigation of selective quantum-well intermixing (QWI) in 1.3-µm GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO2-capped samples, while uncapped and SiO2-capped samples by plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications.
Original languageEnglish
Pages (from-to)4259-4261
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number24
DOIs
Publication statusPublished - 16 Jun 2003

Keywords

  • bandgap
  • GaInNAs
  • GaAs
  • quantum well intermixing

Cite this

Macaluso, R., Sun, H. D., Dawson, M. D., Robert, F., Bryce, A. C., Marsh, J. H., & Riechert, H. (2003). Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixing. Applied Physics Letters, 82(24), 4259-4261. https://doi.org/10.1063/1.1583865