Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors

N.M. Boyall, K. Durose, T.Y. Liu, A. Trampert, C. Liu, I.M. Watson

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Abstract

Three methods in semiconductor defect analysis are described with examples and appraisal of their capbilities; an electron beam induced current method (R-EBIC) is shown to determine the sense of band bending at grain boundaries in the CdTe-CdS system. Cathodoluminescence in the TEM has demonstrated a link between stacking faults and 3.26eV luminescence in GaN. Statistical analysis of spatial pattern appolied to 'v-pit' distributions in InGaN structures on sapphire demonstrates the pits to be correlatied on the scale of 60-120nm.
Original languageEnglish
Pages (from-to)61-66
Number of pages5
JournalInstitute of Physics Conference Series
Volume179
Issue number2
Publication statusPublished - 2003

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Keywords

  • semiconductor defect analysis

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