Abstract
Three methods in semiconductor defect analysis are described with examples and appraisal of their capbilities; an electron beam induced current method (R-EBIC) is shown to determine the sense of band bending at grain boundaries in the CdTe-CdS system. Cathodoluminescence in the TEM has demonstrated a link between stacking faults and 3.26eV luminescence in GaN. Statistical analysis of spatial pattern appolied to 'v-pit' distributions in InGaN structures on sapphire demonstrates the pits to be correlatied on the scale of 60-120nm.
Original language | English |
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Pages (from-to) | 61-66 |
Number of pages | 5 |
Journal | Institute of Physics Conference Series |
Volume | 179 |
Issue number | 2 |
Publication status | Published - 2003 |
Keywords
- semiconductor defect analysis