Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors

N.M. Boyall; K. Durose; T.Y. Liu; A. Trampert; C. Liu; I.M. Watson

Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors

N.M. Boyall, K. Durose, T.Y. Liu, A. Trampert, C. Liu, I.M. Watson

Research output: Contribution to journal › Article

Abstract

Three methods in semiconductor defect analysis are described with examples and appraisal of their capbilities; an electron beam induced current method (R-EBIC) is shown to determine the sense of band bending at grain boundaries in the CdTe-CdS system. Cathodoluminescence in the TEM has demonstrated a link between stacking faults and 3.26eV luminescence in GaN. Statistical analysis of spatial pattern appolied to 'v-pit' distributions in InGaN structures on sapphire demonstrates the pits to be correlatied on the scale of 60-120nm.

Original language	English
Pages (from-to)	61-66
Number of pages	5
Journal	Institute of Physics Conference Series
Volume	179
Issue number	2
Publication status	Published - 2003

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Keywords

semiconductor defect analysis

Cite this

Boyall, N. M., Durose, K., Liu, T. Y., Trampert, A., Liu, C., & Watson, I. M. (2003). Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors. Institute of Physics Conference Series, 179(2), 61-66.

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abstract = "Three methods in semiconductor defect analysis are described with examples and appraisal of their capbilities; an electron beam induced current method (R-EBIC) is shown to determine the sense of band bending at grain boundaries in the CdTe-CdS system. Cathodoluminescence in the TEM has demonstrated a link between stacking faults and 3.26eV luminescence in GaN. Statistical analysis of spatial pattern appolied to 'v-pit' distributions in InGaN structures on sapphire demonstrates the pits to be correlatied on the scale of 60-120nm.",

keywords = "semiconductor defect analysis",

author = "N.M. Boyall and K. Durose and T.Y. Liu and A. Trampert and C. Liu and I.M. Watson",

note = "Paper presented at Electron Microscopy and Analysis Group Conference, Oxford, 2003.",

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language = "English",

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T1 - Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors

AU - Boyall, N.M.

AU - Durose, K.

AU - Liu, T.Y.

AU - Trampert, A.

AU - Liu, C.

AU - Watson, I.M.

N1 - Paper presented at Electron Microscopy and Analysis Group Conference, Oxford, 2003.

PY - 2003

Y1 - 2003

N2 - Three methods in semiconductor defect analysis are described with examples and appraisal of their capbilities; an electron beam induced current method (R-EBIC) is shown to determine the sense of band bending at grain boundaries in the CdTe-CdS system. Cathodoluminescence in the TEM has demonstrated a link between stacking faults and 3.26eV luminescence in GaN. Statistical analysis of spatial pattern appolied to 'v-pit' distributions in InGaN structures on sapphire demonstrates the pits to be correlatied on the scale of 60-120nm.

AB - Three methods in semiconductor defect analysis are described with examples and appraisal of their capbilities; an electron beam induced current method (R-EBIC) is shown to determine the sense of band bending at grain boundaries in the CdTe-CdS system. Cathodoluminescence in the TEM has demonstrated a link between stacking faults and 3.26eV luminescence in GaN. Statistical analysis of spatial pattern appolied to 'v-pit' distributions in InGaN structures on sapphire demonstrates the pits to be correlatied on the scale of 60-120nm.

KW - semiconductor defect analysis

M3 - Article

VL - 179

SP - 61

EP - 66

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

SN - 0951-3248

IS - 2

ER -