Three methods in semiconductor defect analysis are described with examples and appraisal of their capbilities; an electron beam induced current method (R-EBIC) is shown to determine the sense of band bending at grain boundaries in the CdTe-CdS system. Cathodoluminescence in the TEM has demonstrated a link between stacking faults and 3.26eV luminescence in GaN. Statistical analysis of spatial pattern appolied to 'v-pit' distributions in InGaN structures on sapphire demonstrates the pits to be correlatied on the scale of 60-120nm.
|Number of pages||5|
|Journal||Institute of Physics Conference Series|
|Publication status||Published - 2003|
- semiconductor defect analysis
Boyall, N. M., Durose, K., Liu, T. Y., Trampert, A., Liu, C., & Watson, I. M. (2003). Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors. Institute of Physics Conference Series, 179(2), 61-66.