Second harmonic generation in the characterisation of surface effects in epitaxial CdxHg1-xTe (CMT) <111> layers

Leonard Berlouis, A. Wark, F.R. Cruickshank, R. Antoine, P. Galletto, Pierre-Francois Brevet, H.H. Girault, S.C. Gupta, F.R. Chavada, S. Kumar, A.K. Garg

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Second-harmonic (SH) rotational anisotropy measurements performed
on epitaxial Cdx
Hg1−x
Te (CMT) layers grown on CdTe h111i B substrate exhibits an
interference in the SH signal originating from the bulk and from the CMT surfaces.
The threefold symmetry of the epilayer was shown to be sensitive to the nature of
adsorbed species at the surface when in contact with an electrolyte solution despite
the strong SH generation in the bulk of the layer. The modification of the SH
response from a non-centrosymmetric semiconducting material to such an extent is
unusual since bulk SH generation is considered as the dominant contributor in
these instances. The case of CMT is, however, rather specific in that the observed
SH signal originates from, at most, only the top 40 nm of the CMT epilayer.
This important difference means that surface modification by means of electron
donating or withdrawing groups will play a large role in the observed SHG signal.
Original languageEnglish
Pages (from-to)1117-1122
Number of pages6
JournalSemiconductor Science and Technology
Volume13
Issue number10
DOIs
Publication statusPublished - 1998

Keywords

  • second harmonic generation
  • characterization
  • surface effects
  • epitaxial layers
  • CdxHg1-xTe(111)

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