Second harmonic generation in the characterisation of epitaxial CdxHg1-xTe (CMT) (111) surfaces

L.E.A. Berlouis, A.W. Wark, F.R. Cruickshank, R. Antoine, P. Galletto, Pierre-Francois Brevet, H.H. Girault, S.C. Gupta, F.R. Chavada, A.K. Garg

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Abstract

Second-harmonic (SH) rotation anisotropy measurements have been performed for the first time on epitaxial CMT layers grown on CdTe〈1 1 1〉 B substrate. The CMT response shows a strong surface contribution to the SH signal. This modification of the SH response from a non-centrosymmetric II–VI material has not been previously reported since bulk SH generation has always been considered as the dominant contributor in these instances. The difference in the case of the CMT however is that the observed SH signal orginates from, at most, only the top 30 nm of the CMT epilayer.
Original languageEnglish
Pages (from-to)691-695
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
DOIs
Publication statusPublished - Feb 1998

Keywords

  • second harmonic generation
  • characterisation
  • epitaxial CdxHg1-xTe (CMT) (111) surfaces

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    Berlouis, L. E. A., Wark, A. W., Cruickshank, F. R., Antoine, R., Galletto, P., Brevet, P-F., Girault, H. H., Gupta, S. C., Chavada, F. R., & Garg, A. K. (1998). Second harmonic generation in the characterisation of epitaxial CdxHg1-xTe (CMT) (111) surfaces. Journal of Crystal Growth, 184-185, 691-695. https://doi.org/10.1016/S0022-0248(98)80144-9