Second harmonic generation in the characterisation of epitaxial CdxHg1-xTe (CMT) (111) surfaces

L.E.A. Berlouis, A.W. Wark, F.R. Cruickshank, R. Antoine, P. Galletto, Pierre-Francois Brevet, H.H. Girault, S.C. Gupta, F.R. Chavada, A.K. Garg

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Second-harmonic (SH) rotation anisotropy measurements have been performed for the first time on epitaxial CMT layers grown on CdTe〈1 1 1〉 B substrate. The CMT response shows a strong surface contribution to the SH signal. This modification of the SH response from a non-centrosymmetric II–VI material has not been previously reported since bulk SH generation has always been considered as the dominant contributor in these instances. The difference in the case of the CMT however is that the observed SH signal orginates from, at most, only the top 30 nm of the CMT epilayer.
LanguageEnglish
Pages691-695
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
DOIs
Publication statusPublished - Feb 1998

Fingerprint

Epilayers
Anisotropy
Epitaxial layers
Harmonic generation
harmonic generations
harmonics
Substrates
anisotropy

Keywords

  • second harmonic generation
  • characterisation
  • epitaxial CdxHg1-xTe (CMT) (111) surfaces

Cite this

Berlouis, L.E.A. ; Wark, A.W. ; Cruickshank, F.R. ; Antoine, R. ; Galletto, P. ; Brevet, Pierre-Francois ; Girault, H.H. ; Gupta, S.C. ; Chavada, F.R. ; Garg, A.K. / Second harmonic generation in the characterisation of epitaxial CdxHg1-xTe (CMT) (111) surfaces. In: Journal of Crystal Growth. 1998 ; Vol. 184-185. pp. 691-695.
@article{0081a1aa91e646cbb59b88a2c9352337,
title = "Second harmonic generation in the characterisation of epitaxial CdxHg1-xTe (CMT) (111) surfaces",
abstract = "Second-harmonic (SH) rotation anisotropy measurements have been performed for the first time on epitaxial CMT layers grown on CdTe〈1 1 1〉 B substrate. The CMT response shows a strong surface contribution to the SH signal. This modification of the SH response from a non-centrosymmetric II–VI material has not been previously reported since bulk SH generation has always been considered as the dominant contributor in these instances. The difference in the case of the CMT however is that the observed SH signal orginates from, at most, only the top 30 nm of the CMT epilayer.",
keywords = "second harmonic generation, characterisation, epitaxial CdxHg1-xTe (CMT) (111) surfaces",
author = "L.E.A. Berlouis and A.W. Wark and F.R. Cruickshank and R. Antoine and P. Galletto and Pierre-Francois Brevet and H.H. Girault and S.C. Gupta and F.R. Chavada and A.K. Garg",
year = "1998",
month = "2",
doi = "10.1016/S0022-0248(98)80144-9",
language = "English",
volume = "184-185",
pages = "691--695",
journal = "Journal of Crystal Growth",
issn = "0022-0248",

}

Berlouis, LEA, Wark, AW, Cruickshank, FR, Antoine, R, Galletto, P, Brevet, P-F, Girault, HH, Gupta, SC, Chavada, FR & Garg, AK 1998, 'Second harmonic generation in the characterisation of epitaxial CdxHg1-xTe (CMT) (111) surfaces' Journal of Crystal Growth, vol. 184-185, pp. 691-695. https://doi.org/10.1016/S0022-0248(98)80144-9

Second harmonic generation in the characterisation of epitaxial CdxHg1-xTe (CMT) (111) surfaces. / Berlouis, L.E.A.; Wark, A.W.; Cruickshank, F.R.; Antoine, R.; Galletto, P.; Brevet, Pierre-Francois; Girault, H.H.; Gupta, S.C.; Chavada, F.R.; Garg, A.K.

In: Journal of Crystal Growth, Vol. 184-185, 02.1998, p. 691-695.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Second harmonic generation in the characterisation of epitaxial CdxHg1-xTe (CMT) (111) surfaces

AU - Berlouis, L.E.A.

AU - Wark, A.W.

AU - Cruickshank, F.R.

AU - Antoine, R.

AU - Galletto, P.

AU - Brevet, Pierre-Francois

AU - Girault, H.H.

AU - Gupta, S.C.

AU - Chavada, F.R.

AU - Garg, A.K.

PY - 1998/2

Y1 - 1998/2

N2 - Second-harmonic (SH) rotation anisotropy measurements have been performed for the first time on epitaxial CMT layers grown on CdTe〈1 1 1〉 B substrate. The CMT response shows a strong surface contribution to the SH signal. This modification of the SH response from a non-centrosymmetric II–VI material has not been previously reported since bulk SH generation has always been considered as the dominant contributor in these instances. The difference in the case of the CMT however is that the observed SH signal orginates from, at most, only the top 30 nm of the CMT epilayer.

AB - Second-harmonic (SH) rotation anisotropy measurements have been performed for the first time on epitaxial CMT layers grown on CdTe〈1 1 1〉 B substrate. The CMT response shows a strong surface contribution to the SH signal. This modification of the SH response from a non-centrosymmetric II–VI material has not been previously reported since bulk SH generation has always been considered as the dominant contributor in these instances. The difference in the case of the CMT however is that the observed SH signal orginates from, at most, only the top 30 nm of the CMT epilayer.

KW - second harmonic generation

KW - characterisation

KW - epitaxial CdxHg1-xTe (CMT) (111) surfaces

U2 - 10.1016/S0022-0248(98)80144-9

DO - 10.1016/S0022-0248(98)80144-9

M3 - Article

VL - 184-185

SP - 691

EP - 695

JO - Journal of Crystal Growth

T2 - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -