Abstract
Module performance data collected at two sites are analyzed in order to identify the respective magnitudes of seasonal annealing and degradation in comparison to spectral effects. It is demonstrated in this paper that at one site (Loughborough, UK) the spectrum dominates and very little seasonal annealing is observed. In contrast, at the other site (Golden, US), half of the seasonal variation can be attributed to spectral changes while the other half must be attributed to thermal annealing of defects. Differences between multi-junction categories are investigated and it is shown that singlejunction devices exhibit a greater seasonal annealing than multi-junctions, while the latter tend to be more influenced by spectral effects.
Original language | English |
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Pages | 1484-1487 |
Number of pages | 4 |
DOIs | |
Publication status | Published - Jan 2005 |
Event | 31st IEEE Photovoltaic Specialist Conference - Florida, United States Duration: 3 Jan 2005 → 7 Jan 2005 |
Conference
Conference | 31st IEEE Photovoltaic Specialist Conference |
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Country/Territory | United States |
City | Florida |
Period | 3/01/05 → 7/01/05 |
Keywords
- seasonal performance
- a-Si
- single-
- multijunction modules
- two locations
- annealing
- voltage
- temperature
- system testing
- renewable energy resources
- power measurement
- photonic band gap
- manufacturing
- dual band
- degradation