Scanning tunnelling luminescence studies of nitride semiconductor thin films under ambient conditions

S.K. Manson-Smith; C. Trager-Cowan; K.P. O'Donnell

doi:10.1002/1521-3951(200111)228:2<445::AID-PSSB445>3.0.CO;2-I

Scanning tunnelling luminescence studies of nitride semiconductor thin films under ambient conditions

S.K. Manson-Smith, C. Trager-Cowan, K.P. O'Donnell

Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have investigated the properties of a commercial light-emitting diode (LED) structure containing an InGaN single quantum well (SQW) by scanning tunneling luminescence (STL). Data was acquired under ambient conditions, i.e., in air and at room temperature, using our unique STL microscope with a novel light collection geometry. Scanning tunneling microscopy (STM) images revealed the presence of hexagonal pits in the structure, with STL images showing strong luminescence from these pits. The variation of STL intensity with bias voltage shows the STL threshold at --2.1 V is numerically similar to the peak position of the SQW luminescence band. A slight shoulder at --2.8V corresponds to the plateau of the delocalised absorption profile, observed in macroscopic measurements. The peak observed at --3.2 V is close to the observed GaN band edge emission.

Original language	English
Pages (from-to)	445 -448
Journal	Physica Status Solidi B
Volume	228
Issue number	2
DOIs	https://doi.org/10.1002/1521-3951(200111)228:2<445::AID-PSSB445>3.0.CO;2-I
Publication status	Published - 13 Nov 2001

Keywords

tunnelling luminescence
nitride semiconductor
thin films
InGaN
nanoscience

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10.1002/1521-3951(200111)228:2<445::AID-PSSB445>3.0.CO;2-I

Cite this

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title = "Scanning tunnelling luminescence studies of nitride semiconductor thin films under ambient conditions",

abstract = "We have investigated the properties of a commercial light-emitting diode (LED) structure containing an InGaN single quantum well (SQW) by scanning tunneling luminescence (STL). Data was acquired under ambient conditions, i.e., in air and at room temperature, using our unique STL microscope with a novel light collection geometry. Scanning tunneling microscopy (STM) images revealed the presence of hexagonal pits in the structure, with STL images showing strong luminescence from these pits. The variation of STL intensity with bias voltage shows the STL threshold at --2.1 V is numerically similar to the peak position of the SQW luminescence band. A slight shoulder at --2.8V corresponds to the plateau of the delocalised absorption profile, observed in macroscopic measurements. The peak observed at --3.2 V is close to the observed GaN band edge emission.",

keywords = "tunnelling luminescence, nitride semiconductor, thin films, InGaN, nanoscience",

author = "S.K. Manson-Smith and C. Trager-Cowan and K.P. O'Donnell",

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T1 - Scanning tunnelling luminescence studies of nitride semiconductor thin films under ambient conditions

AU - Manson-Smith, S.K.

AU - Trager-Cowan, C.

AU - O'Donnell, K.P.

PY - 2001/11/13

Y1 - 2001/11/13

N2 - We have investigated the properties of a commercial light-emitting diode (LED) structure containing an InGaN single quantum well (SQW) by scanning tunneling luminescence (STL). Data was acquired under ambient conditions, i.e., in air and at room temperature, using our unique STL microscope with a novel light collection geometry. Scanning tunneling microscopy (STM) images revealed the presence of hexagonal pits in the structure, with STL images showing strong luminescence from these pits. The variation of STL intensity with bias voltage shows the STL threshold at --2.1 V is numerically similar to the peak position of the SQW luminescence band. A slight shoulder at --2.8V corresponds to the plateau of the delocalised absorption profile, observed in macroscopic measurements. The peak observed at --3.2 V is close to the observed GaN band edge emission.

AB - We have investigated the properties of a commercial light-emitting diode (LED) structure containing an InGaN single quantum well (SQW) by scanning tunneling luminescence (STL). Data was acquired under ambient conditions, i.e., in air and at room temperature, using our unique STL microscope with a novel light collection geometry. Scanning tunneling microscopy (STM) images revealed the presence of hexagonal pits in the structure, with STL images showing strong luminescence from these pits. The variation of STL intensity with bias voltage shows the STL threshold at --2.1 V is numerically similar to the peak position of the SQW luminescence band. A slight shoulder at --2.8V corresponds to the plateau of the delocalised absorption profile, observed in macroscopic measurements. The peak observed at --3.2 V is close to the observed GaN band edge emission.

KW - tunnelling luminescence

KW - nitride semiconductor

KW - thin films

KW - InGaN

KW - nanoscience

UR - http://dx.doi.org/10.1002/1521-3951(200111)228:2<445::AID-PSSB445>3.0.CO;2-I

U2 - 10.1002/1521-3951(200111)228:2<445::AID-PSSB445>3.0.CO;2-I

DO - 10.1002/1521-3951(200111)228:2<445::AID-PSSB445>3.0.CO;2-I

M3 - Article

SN - 0370-1972

VL - 228

SP - 445

EP - 448

JO - Physica Status Solidi B

JF - Physica Status Solidi B

IS - 2

ER -

Scanning tunnelling luminescence studies of nitride semiconductor thin films under ambient conditions

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Keywords

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