Scanning electron microscopy as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

C. Trager-Cowan; A. Alasmari; W. Avis; J. Bruckbauer; P. R. Edwards; B. Hourahine; S. Kraeusel; G. Kusch; R. Johnston; G. Naresh-Kumar; R. W. Martin; M. Nouf-Allehiani; E. Pascal; L. Spasevski; D. Thomson; S. Vespucci; P. J. Parbrook; M. D. Smith; J. Enslin; F. Mehnke; M. Kneissl; C. Kuhn; T. Wernicke; S. Hagedorn; A. Knauer; V. Kueller; S. Walde; M. Weyers; P.-M. Coulon; P. A. Shields; Y. Zhang; L. Jiu; Yipin Gong; R. M. Smith; T. Wang; A. Winkelmann

doi:10.1364/PRJ.7.000B73

Scanning electron microscopy as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

C. Trager-Cowan, A. Alasmari, W. Avis, J. Bruckbauer, P. R. Edwards, B. Hourahine, S. Kraeusel, G. Kusch, R. Johnston, G. Naresh-Kumar, R. W. Martin, M. Nouf-Allehiani, E. Pascal, L. Spasevski, D. Thomson, S. Vespucci, P. J. Parbrook, M. D. Smith, J. Enslin, F. MehnkeM. Kneissl, C. Kuhn, T. Wernicke, S. Hagedorn, A. Knauer, V. Kueller, S. Walde, M. Weyers, P.-M. Coulon, P. A. Shields, Y. Zhang, L. Jiu, Yipin Gong, R. M. Smith, T. Wang, A. Winkelmann

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Abstract

In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.

Original language	English
Pages (from-to)	B73-B82
Number of pages	10
Journal	Photonics Research
Volume	7
Issue number	11
DOIs	https://doi.org/10.1364/PRJ.7.000B73
Publication status	Published - 30 Oct 2019

Keywords

scanning electron microscopy
electron backscatter diffraction
non-destructive techniques
UV emitting nitride semiconductors

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Trager-Cowan-etal-PR-2019-The-scanning-electron-microscope-as-a-flexible-tool-for-investigatingFinal published version, 1.57 MBLicence: CC BY 4.0

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Trager-Cowan, C., Alasmari, A., Avis, W., Bruckbauer, J., Edwards, P. R., Hourahine, B., Kraeusel, S., Kusch, G., Johnston, R., Naresh-Kumar, G., Martin, R. W., Nouf-Allehiani, M., Pascal, E., Spasevski, L., Thomson, D., Vespucci, S., Parbrook, P. J., Smith, M. D., Enslin, J., ... Winkelmann, A. (2019). Scanning electron microscopy as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. Photonics Research, 7(11), B73-B82. https://doi.org/10.1364/PRJ.7.000B73

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title = "Scanning electron microscopy as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films",

abstract = "In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.",

keywords = "scanning electron microscopy, electron backscatter diffraction, non-destructive techniques, UV emitting nitride semiconductors",

author = "C. Trager-Cowan and A. Alasmari and W. Avis and J. Bruckbauer and Edwards, {P. R.} and B. Hourahine and S. Kraeusel and G. Kusch and R. Johnston and G. Naresh-Kumar and Martin, {R. W.} and M. Nouf-Allehiani and E. Pascal and L. Spasevski and D. Thomson and S. Vespucci and Parbrook, {P. J.} and Smith, {M. D.} and J. Enslin and F. Mehnke and M. Kneissl and C. Kuhn and T. Wernicke and S. Hagedorn and A. Knauer and V. Kueller and S. Walde and M. Weyers and P.-M. Coulon and Shields, {P. A.} and Y. Zhang and L. Jiu and Yipin Gong and Smith, {R. M.} and T. Wang and A. Winkelmann",

year = "2019",

month = oct,

day = "30",

doi = "10.1364/PRJ.7.000B73",

language = "English",

volume = "7",

pages = "B73--B82",

journal = "Photonics Research",

issn = "2327-9125",

publisher = "Optical Society of America",

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Trager-Cowan, C, Alasmari, A, Avis, W, Bruckbauer, J , Edwards, PR , Hourahine, B, Kraeusel, S, Kusch, G, Johnston, R, Naresh-Kumar, G, Martin, RW, Nouf-Allehiani, M, Pascal, E, Spasevski, L, Thomson, D, Vespucci, S, Parbrook, PJ, Smith, MD, Enslin, J, Mehnke, F, Kneissl, M, Kuhn, C, Wernicke, T, Hagedorn, S, Knauer, A, Kueller, V, Walde, S, Weyers, M, Coulon, P-M, Shields, PA, Zhang, Y, Jiu, L, Gong, Y, Smith, RM, Wang, T & Winkelmann, A 2019, 'Scanning electron microscopy as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films', Photonics Research, vol. 7, no. 11, pp. B73-B82. https://doi.org/10.1364/PRJ.7.000B73

TY - JOUR

T1 - Scanning electron microscopy as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

AU - Trager-Cowan, C.

AU - Alasmari, A.

AU - Avis, W.

AU - Bruckbauer, J.

AU - Edwards, P. R.

AU - Hourahine, B.

AU - Kraeusel, S.

AU - Kusch, G.

AU - Johnston, R.

AU - Naresh-Kumar, G.

AU - Martin, R. W.

AU - Nouf-Allehiani, M.

AU - Pascal, E.

AU - Spasevski, L.

AU - Thomson, D.

AU - Vespucci, S.

AU - Parbrook, P. J.

AU - Smith, M. D.

AU - Enslin, J.

AU - Mehnke, F.

AU - Kneissl, M.

AU - Kuhn, C.

AU - Wernicke, T.

AU - Hagedorn, S.

AU - Knauer, A.

AU - Kueller, V.

AU - Walde, S.

AU - Weyers, M.

AU - Coulon, P.-M.

AU - Shields, P. A.

AU - Zhang, Y.

AU - Jiu, L.

AU - Gong, Yipin

AU - Smith, R. M.

AU - Wang, T.

AU - Winkelmann, A.

PY - 2019/10/30

Y1 - 2019/10/30

N2 - In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.

AB - In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.

KW - scanning electron microscopy

KW - electron backscatter diffraction

KW - non-destructive techniques

KW - UV emitting nitride semiconductors

UR - https://www.osapublishing.org/prj/home.cfm

U2 - 10.1364/PRJ.7.000B73

DO - 10.1364/PRJ.7.000B73

M3 - Article

SN - 2327-9125

VL - 7

SP - B73-B82

JO - Photonics Research

JF - Photonics Research

IS - 11

ER -

Scanning electron microscopy as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

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Carol Trager-Cowan

Doctoral Training Partnership (DTP 2016-2017 University of Strathclyde) | McDermott, Ryan

Quantitative non-destructive nanoscale characterisation of advanced materials

Nanoanalysis for Advanced Materials and Healthcare - EPSRC strategic equipment

Data for: "Determining GaN nanowire polarity and its influence on light emission in the scanning electron microscope"

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SEM SIRION 200

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Scanning electron microscopy as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

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