Abstract
Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400–1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.
Original language | English |
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Pages (from-to) | 1782-1786 |
Number of pages | 5 |
Journal | Nano Letters |
Volume | 17 |
Issue number | 3 |
Early online date | 24 Feb 2017 |
DOIs | |
Publication status | Published - 8 Mar 2017 |
Keywords
- color centers
- nanopillars
- photonics
- silicon carbide
- spin-qubits
- spintronics