Saturation of absorption and gain in a quantum dot diode with continuous-wave driving

A. Tierno, T. Ackemann, C. G. Leburn, C. T. A. Brown

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6 Citations (Scopus)

Abstract

We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]
Original languageEnglish
Article number231104
Number of pages3
JournalApplied Physics Letters
Volume97
Issue number23
DOIs
Publication statusPublished - 6 Dec 2010

Keywords

  • gallium arsenide
  • wide band gap semiconductors
  • semiconductor quantum dots
  • semiconductor diodes
  • self-assembly
  • indium compounds
  • III-V semiconductors

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