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Abstract
We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]
Original language | English |
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Article number | 231104 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 23 |
DOIs | |
Publication status | Published - 6 Dec 2010 |
Keywords
- gallium arsenide
- wide band gap semiconductors
- semiconductor quantum dots
- semiconductor diodes
- self-assembly
- indium compounds
- III-V semiconductors
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Dive into the research topics of 'Saturation of absorption and gain in a quantum dot diode with continuous-wave driving'. Together they form a unique fingerprint.Projects
- 1 Finished
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NONLINEAR OPTICS AND LIGHT LOCALIZATION IN QUANTUM DOT
EPSRC (Engineering and Physical Sciences Research Council)
1/01/07 → 30/06/10
Project: Research