Saturation of absorption and gain in a quantum dot diode with continuous-wave driving

A. Tierno, T. Ackemann, C. G. Leburn, C. T. A. Brown

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]
Original languageEnglish
Article number231104
Number of pages3
JournalApplied Physics Letters
Volume97
Issue number23
DOIs
Publication statusPublished - 6 Dec 2010

Fingerprint

continuous radiation
diodes
quantum dots
saturation
room temperature
wavelengths

Keywords

  • gallium arsenide
  • wide band gap semiconductors
  • semiconductor quantum dots
  • semiconductor diodes
  • self-assembly
  • indium compounds
  • III-V semiconductors

Cite this

Tierno, A. ; Ackemann, T. ; Leburn, C. G. ; Brown, C. T. A. / Saturation of absorption and gain in a quantum dot diode with continuous-wave driving. In: Applied Physics Letters. 2010 ; Vol. 97, No. 23.
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abstract = "We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]",
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Tierno, A, Ackemann, T, Leburn, CG & Brown, CTA 2010, 'Saturation of absorption and gain in a quantum dot diode with continuous-wave driving', Applied Physics Letters, vol. 97, no. 23, 231104. https://doi.org/10.1063/1.3524824

Saturation of absorption and gain in a quantum dot diode with continuous-wave driving. / Tierno, A.; Ackemann, T.; Leburn, C. G.; Brown, C. T. A.

In: Applied Physics Letters, Vol. 97, No. 23, 231104, 06.12.2010.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Saturation of absorption and gain in a quantum dot diode with continuous-wave driving

AU - Tierno, A.

AU - Ackemann, T.

AU - Leburn, C. G.

AU - Brown, C. T. A.

PY - 2010/12/6

Y1 - 2010/12/6

N2 - We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]

AB - We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]

KW - gallium arsenide

KW - wide band gap semiconductors

KW - semiconductor quantum dots

KW - semiconductor diodes

KW - self-assembly

KW - indium compounds

KW - III-V semiconductors

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U2 - 10.1063/1.3524824

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M3 - Article

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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M1 - 231104

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Tierno A, Ackemann T, Leburn CG, Brown CTA. Saturation of absorption and gain in a quantum dot diode with continuous-wave driving. Applied Physics Letters. 2010 Dec 6;97(23). 231104. https://doi.org/10.1063/1.3524824

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