Saturation of absorption and gain in a quantum dot diode with continuous-wave driving

A. Tierno; T. Ackemann; C. G. Leburn; C. T. A. Brown

doi:10.1063/1.3524824

Saturation of absorption and gain in a quantum dot diode with continuous-wave driving

A. Tierno, T. Ackemann, C. G. Leburn, C. T. A. Brown

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]

Original language	English
Article number	231104
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	23
DOIs	https://doi.org/10.1063/1.3524824
Publication status	Published - 6 Dec 2010

Keywords

gallium arsenide
wide band gap semiconductors
semiconductor quantum dots
semiconductor diodes
self-assembly
indium compounds
III-V semiconductors

Access to Document

10.1063/1.3524824

Link to publication in Scopus

Projects

1 Finished

NONLINEAR OPTICS AND LIGHT LOCALIZATION IN QUANTUM DOT

Ackemann, T.

EPSRC (Engineering and Physical Sciences Research Council)

1/01/07 → 30/06/10

Project: Research

Cite this

Tierno, A., Ackemann, T., Leburn, C. G., & Brown, C. T. A. (2010). Saturation of absorption and gain in a quantum dot diode with continuous-wave driving. Applied Physics Letters, 97(23), [231104]. https://doi.org/10.1063/1.3524824

@article{c4489a8ac9094025b549056764c4e084,

title = "Saturation of absorption and gain in a quantum dot diode with continuous-wave driving",

abstract = "We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]",

keywords = "gallium arsenide, wide band gap semiconductors , semiconductor quantum dots, semiconductor diodes, self-assembly, indium compounds, III-V semiconductors",

author = "A. Tierno and T. Ackemann and Leburn, {C. G.} and Brown, {C. T. A.}",

year = "2010",

month = dec,

day = "6",

doi = "10.1063/1.3524824",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "23",

}

TY - JOUR

T1 - Saturation of absorption and gain in a quantum dot diode with continuous-wave driving

AU - Tierno, A.

AU - Ackemann, T.

AU - Leburn, C. G.

AU - Brown, C. T. A.

PY - 2010/12/6

Y1 - 2010/12/6

N2 - We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]

AB - We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]

KW - gallium arsenide

KW - wide band gap semiconductors

KW - semiconductor quantum dots

KW - semiconductor diodes

KW - self-assembly

KW - indium compounds

KW - III-V semiconductors

UR - http://www.scopus.com/inward/record.url?scp=78650397519&partnerID=8YFLogxK

U2 - 10.1063/1.3524824

DO - 10.1063/1.3524824

M3 - Article

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 231104

ER -