Saturation of absorption and gain in a quantum dot diode with continuous-wave driving

A. Tierno, T. Ackemann, C. G. Leburn, C. T. A. Brown

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]
Original languageEnglish
Article number231104
Number of pages3
JournalApplied Physics Letters
Volume97
Issue number23
DOIs
Publication statusPublished - 6 Dec 2010

Fingerprint

continuous radiation
diodes
quantum dots
saturation
room temperature
wavelengths

Keywords

  • gallium arsenide
  • wide band gap semiconductors
  • semiconductor quantum dots
  • semiconductor diodes
  • self-assembly
  • indium compounds
  • III-V semiconductors

Cite this

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abstract = "We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]",
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Saturation of absorption and gain in a quantum dot diode with continuous-wave driving. / Tierno, A.; Ackemann, T.; Leburn, C. G.; Brown, C. T. A.

In: Applied Physics Letters, Vol. 97, No. 23, 231104, 06.12.2010.

Research output: Contribution to journalArticle

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AU - Tierno, A.

AU - Ackemann, T.

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AU - Brown, C. T. A.

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AB - We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]

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KW - wide band gap semiconductors

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