Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities

K. Bejtka, F. Rizzi, P.R. Edwards, R.W. Martin, E. Gu, M.D. Dawson, I.M. Watson, I.R. Sellers, F. Semond

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

AlInN alloys achieve an in-plane lattice match to hexagonal GaN at an indium nitride mole fraction of 18%. Meanwhile Al0.82In0.18N displays a refractive index contrast of 7% with GaN at visible wavelengths. We illustrate the use of Al0.82In0.18N insertion layers to control layer thicknesses during homoepitaxial growth of GaN-based microcavities, using in situ optical reflectometry. The structures discussed are 3 /2 microcavities incorporating distributed InGaN quantum wells tailored for emission at 400 nm. As-grown samples have been characterised by techniques including cathodoluminescence spectroscopy. In addition to their role in growth monitoring, there are several post-growth processing steps in which Al0.82In0.18N insertion layers can assist microcavity fabrication. We focus here on a demonstration of the 1:5 etch rate selectivity obtainable between Al0.82In0.18</SUB >N and GaN in reactive ion etching
LanguageEnglish
Pages2648-2652
Number of pages4
JournalPhysica Status Solidi A: Applications and Materials Science
Volume202
Issue number14
DOIs
Publication statusPublished - 4 Nov 2005

Fingerprint

Microcavities
Aluminum
Nitrides
Indium
nitrides
indium
insertion
aluminum
Fabrication
fabrication
Cathodoluminescence
Reactive ion etching
cathodoluminescence
Semiconductor quantum wells
Refractive index
Demonstrations
selectivity
etching
quantum wells
Spectroscopy

Keywords

  • 78.60.Hk,
  • plasma
  • lasers
  • 81.65.Cn
  • 81.15.Gh,
  • 81.05.Ea,
  • 78.67.De,

Cite this

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abstract = "AlInN alloys achieve an in-plane lattice match to hexagonal GaN at an indium nitride mole fraction of 18{\%}. Meanwhile Al0.82In0.18N displays a refractive index contrast of 7{\%} with GaN at visible wavelengths. We illustrate the use of Al0.82In0.18N insertion layers to control layer thicknesses during homoepitaxial growth of GaN-based microcavities, using in situ optical reflectometry. The structures discussed are 3 /2 microcavities incorporating distributed InGaN quantum wells tailored for emission at 400 nm. As-grown samples have been characterised by techniques including cathodoluminescence spectroscopy. In addition to their role in growth monitoring, there are several post-growth processing steps in which Al0.82In0.18N insertion layers can assist microcavity fabrication. We focus here on a demonstration of the 1:5 etch rate selectivity obtainable between Al0.82In0.18N and GaN in reactive ion etching",
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Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities. / Bejtka, K.; Rizzi, F.; Edwards, P.R.; Martin, R.W.; Gu, E.; Dawson, M.D.; Watson, I.M.; Sellers, I.R.; Semond, F.

In: Physica Status Solidi A: Applications and Materials Science, Vol. 202, No. 14, 04.11.2005, p. 2648-2652.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Roles for aluminium indium nitride insertion layers in fabrication of GaN-based microcavities

AU - Bejtka, K.

AU - Rizzi, F.

AU - Edwards, P.R.

AU - Martin, R.W.

AU - Gu, E.

AU - Dawson, M.D.

AU - Watson, I.M.

AU - Sellers, I.R.

AU - Semond, F.

PY - 2005/11/4

Y1 - 2005/11/4

N2 - AlInN alloys achieve an in-plane lattice match to hexagonal GaN at an indium nitride mole fraction of 18%. Meanwhile Al0.82In0.18N displays a refractive index contrast of 7% with GaN at visible wavelengths. We illustrate the use of Al0.82In0.18N insertion layers to control layer thicknesses during homoepitaxial growth of GaN-based microcavities, using in situ optical reflectometry. The structures discussed are 3 /2 microcavities incorporating distributed InGaN quantum wells tailored for emission at 400 nm. As-grown samples have been characterised by techniques including cathodoluminescence spectroscopy. In addition to their role in growth monitoring, there are several post-growth processing steps in which Al0.82In0.18N insertion layers can assist microcavity fabrication. We focus here on a demonstration of the 1:5 etch rate selectivity obtainable between Al0.82In0.18N and GaN in reactive ion etching

AB - AlInN alloys achieve an in-plane lattice match to hexagonal GaN at an indium nitride mole fraction of 18%. Meanwhile Al0.82In0.18N displays a refractive index contrast of 7% with GaN at visible wavelengths. We illustrate the use of Al0.82In0.18N insertion layers to control layer thicknesses during homoepitaxial growth of GaN-based microcavities, using in situ optical reflectometry. The structures discussed are 3 /2 microcavities incorporating distributed InGaN quantum wells tailored for emission at 400 nm. As-grown samples have been characterised by techniques including cathodoluminescence spectroscopy. In addition to their role in growth monitoring, there are several post-growth processing steps in which Al0.82In0.18N insertion layers can assist microcavity fabrication. We focus here on a demonstration of the 1:5 etch rate selectivity obtainable between Al0.82In0.18N and GaN in reactive ion etching

KW - 78.60.Hk,

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KW - lasers

KW - 81.65.Cn

KW - 81.15.Gh,

KW - 81.05.Ea,

KW - 78.67.De,

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