Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.
Original languageEnglish
Pages (from-to)217-220
Number of pages3
JournalCurrent Applied Physics
Volume4
Issue number2-4
DOIs
Publication statusPublished - Apr 2004

Fingerprint

Ionization
asymmetry
Semiconductor materials
Radiation
ionization
Carrier transport
hole burning
radiation
Transport properties
excitation
surface layers
transport properties
gallium arsenide

Keywords

  • THz generation
  • photoconductive
  • spectral hole burning

Cite this

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title = "Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation",
abstract = "Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.",
keywords = "THz generation, photoconductive, spectral hole burning",
author = "S.P. Jamison and B. Ersfeld and D.A. Jaroszynski",
year = "2004",
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doi = "10.1016/j.cap.2003.11.013",
language = "English",
volume = "4",
pages = "217--220",
journal = "Current Applied Physics",
issn = "1567-1739",
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Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation. / Jamison, S.P.; Ersfeld, B.; Jaroszynski, D.A.

In: Current Applied Physics, Vol. 4, No. 2-4, 04.2004, p. 217-220.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation

AU - Jamison, S.P.

AU - Ersfeld, B.

AU - Jaroszynski, D.A.

PY - 2004/4

Y1 - 2004/4

N2 - Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.

AB - Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.

KW - THz generation

KW - photoconductive

KW - spectral hole burning

UR - http://dx.doi.org/10.1016/j.cap.2003.11.013

U2 - 10.1016/j.cap.2003.11.013

DO - 10.1016/j.cap.2003.11.013

M3 - Article

VL - 4

SP - 217

EP - 220

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

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ER -