Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation

S.P. Jamison; B. Ersfeld; D.A. Jaroszynski

doi:10.1016/j.cap.2003.11.013

Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation

S.P. Jamison, B. Ersfeld, D.A. Jaroszynski

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.

Original language	English
Pages (from-to)	217-220
Number of pages	3
Journal	Current Applied Physics
Volume	4
Issue number	2-4
DOIs	https://doi.org/10.1016/j.cap.2003.11.013
Publication status	Published - Apr 2004

Keywords

THz generation
photoconductive
spectral hole burning

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10.1016/j.cap.2003.11.013

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title = "Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation",

abstract = "Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.",

keywords = "THz generation, photoconductive, spectral hole burning",

author = "S.P. Jamison and B. Ersfeld and D.A. Jaroszynski",

year = "2004",

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doi = "10.1016/j.cap.2003.11.013",

language = "English",

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journal = "Current Applied Physics",

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T1 - Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation

AU - Jamison, S.P.

AU - Ersfeld, B.

AU - Jaroszynski, D.A.

PY - 2004/4

Y1 - 2004/4

N2 - Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.

AB - Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.

KW - THz generation

KW - photoconductive

KW - spectral hole burning

UR - http://dx.doi.org/10.1016/j.cap.2003.11.013

U2 - 10.1016/j.cap.2003.11.013

DO - 10.1016/j.cap.2003.11.013

M3 - Article

SN - 1567-1739

VL - 4

SP - 217

EP - 220

JO - Current Applied Physics

JF - Current Applied Physics

IS - 2-4

ER -

Role of propagating ionisation fronts in semiconductor generation of sub-ps thz radiation

Abstract

Keywords

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