Reversibility of the light-induced saturation and annealing of defects in a-Si:H

Helena Gleskova, P. A. Morin, J. N. Bullock, S. Wagner

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Results on the reversibility of the light-induced saturation and dark- and light-annealing of the deep-level defects in a-S:H films are presented. The value of the saturated defect density (Nsat) in three samples obtained after initial light-soaking was observed to decrease upon cyclic light-annealing and saturation. This drop in Nsat was observed in two samples after the second illumination while in another sample the drop was observed only after a series of experiments carried out to determine the temperature dependence of Nsat
Original languageEnglish
Pages (from-to)279-283
Number of pages5
JournalMaterials Letters
Volume13
Issue number4-5
Publication statusPublished - 1992

Keywords

  • light-induced saturation
  • annealing
  • saturated defect density

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