Reversibility of the light-induced saturation and annealing of defects in a-Si:H

Helena Gleskova; P. A. Morin; J. N. Bullock; S. Wagner

Reversibility of the light-induced saturation and annealing of defects in a-Si:H

Helena Gleskova, P. A. Morin, J. N. Bullock, S. Wagner

Electronic And Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Results on the reversibility of the light-induced saturation and dark- and light-annealing of the deep-level defects in a-S:H films are presented. The value of the saturated defect density (Nsat) in three samples obtained after initial light-soaking was observed to decrease upon cyclic light-annealing and saturation. This drop in Nsat was observed in two samples after the second illumination while in another sample the drop was observed only after a series of experiments carried out to determine the temperature dependence of Nsat

Original language	English
Pages (from-to)	279-283
Number of pages	5
Journal	Materials Letters
Volume	13
Issue number	4-5
Publication status	Published - 1992

Keywords

light-induced saturation
annealing
saturated defect density

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@article{e3f10a252ab142b0be2cee40f557df7e,

title = "Reversibility of the light-induced saturation and annealing of defects in a-Si:H",

abstract = "Results on the reversibility of the light-induced saturation and dark- and light-annealing of the deep-level defects in a-S:H films are presented. The value of the saturated defect density (Nsat) in three samples obtained after initial light-soaking was observed to decrease upon cyclic light-annealing and saturation. This drop in Nsat was observed in two samples after the second illumination while in another sample the drop was observed only after a series of experiments carried out to determine the temperature dependence of Nsat",

keywords = "light-induced saturation , annealing , saturated defect density",

author = "Helena Gleskova and Morin, {P. A.} and Bullock, {J. N.} and S. Wagner",

year = "1992",

language = "English",

volume = "13",

pages = "279--283",

journal = "Materials Letters",

issn = "0167-577X",

number = "4-5",

}

TY - JOUR

T1 - Reversibility of the light-induced saturation and annealing of defects in a-Si:H

AU - Gleskova, Helena

AU - Morin, P. A.

AU - Bullock, J. N.

AU - Wagner, S.

PY - 1992

Y1 - 1992

N2 - Results on the reversibility of the light-induced saturation and dark- and light-annealing of the deep-level defects in a-S:H films are presented. The value of the saturated defect density (Nsat) in three samples obtained after initial light-soaking was observed to decrease upon cyclic light-annealing and saturation. This drop in Nsat was observed in two samples after the second illumination while in another sample the drop was observed only after a series of experiments carried out to determine the temperature dependence of Nsat

AB - Results on the reversibility of the light-induced saturation and dark- and light-annealing of the deep-level defects in a-S:H films are presented. The value of the saturated defect density (Nsat) in three samples obtained after initial light-soaking was observed to decrease upon cyclic light-annealing and saturation. This drop in Nsat was observed in two samples after the second illumination while in another sample the drop was observed only after a series of experiments carried out to determine the temperature dependence of Nsat

KW - light-induced saturation

KW - annealing

KW - saturated defect density

UR - http://cat.inist.fr/?aModele=afficheN&cpsidt=5300897

M3 - Article

VL - 13

SP - 279

EP - 283

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

IS - 4-5

ER -