Reversibility of the light-induced saturation and annealing of defects in a-Si:H

Helena Gleskova, P. A. Morin, J. N. Bullock, S. Wagner

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Results on the reversibility of the light-induced saturation and dark- and light-annealing of the deep-level defects in a-S:H films are presented. The value of the saturated defect density (Nsat) in three samples obtained after initial light-soaking was observed to decrease upon cyclic light-annealing and saturation. This drop in Nsat was observed in two samples after the second illumination while in another sample the drop was observed only after a series of experiments carried out to determine the temperature dependence of Nsat
Original languageEnglish
Pages (from-to)279-283
Number of pages5
JournalMaterials Letters
Volume13
Issue number4-5
Publication statusPublished - 1992

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Annealing
saturation
Defects
annealing
defects
soaking
Defect density
Lighting
illumination
temperature dependence
Experiments
Temperature

Keywords

  • light-induced saturation
  • annealing
  • saturated defect density

Cite this

Gleskova, H., Morin, P. A., Bullock, J. N., & Wagner, S. (1992). Reversibility of the light-induced saturation and annealing of defects in a-Si:H. Materials Letters, 13(4-5), 279-283.
Gleskova, Helena ; Morin, P. A. ; Bullock, J. N. ; Wagner, S. / Reversibility of the light-induced saturation and annealing of defects in a-Si:H. In: Materials Letters. 1992 ; Vol. 13, No. 4-5. pp. 279-283.
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Gleskova, H, Morin, PA, Bullock, JN & Wagner, S 1992, 'Reversibility of the light-induced saturation and annealing of defects in a-Si:H', Materials Letters, vol. 13, no. 4-5, pp. 279-283.

Reversibility of the light-induced saturation and annealing of defects in a-Si:H. / Gleskova, Helena; Morin, P. A.; Bullock, J. N.; Wagner, S.

In: Materials Letters, Vol. 13, No. 4-5, 1992, p. 279-283.

Research output: Contribution to journalArticle

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