Resonant wavelength control of a 1.3um microcavity by intracavity steam oxidation

R. Macaluso, F. Robert, A.C. Bryce, S. Calvez, M.D. Dawson

Research output: Contribution to journalArticle

Abstract

We report a multi-wavelength passive filter working in the 1.3 μm range, fabricated by a post-growth technique based on the combined lateral-vertical steam oxidation of AlGaAs layers within a microcavity. Wafers are photolithographically patterned and etched through the top to create mesa structures which are oxidized from both edges, and control of resonant wavelength is achieved through mesa width, thickness and compositional control of intracavity layers to be oxidized, and oxidation conditions. Microreflectivity measurements of the processed devices show that in this wavelength range it is possible using this approach to control the resonant wavelength over a range of about 52 nm.
LanguageEnglish
PagesL12-L15
JournalSemiconductor Science and Technology
Volume18
Issue number2
DOIs
Publication statusPublished - Feb 2003

Fingerprint

Microcavities
Steam
steam
Wavelength
Oxidation
oxidation
mesas
wavelengths
Passive filters
aluminum gallium arsenides
wafers
filters

Keywords

  • wavelength tuning
  • semiconductors
  • optical microcavity

Cite this

Macaluso, R. ; Robert, F. ; Bryce, A.C. ; Calvez, S. ; Dawson, M.D. / Resonant wavelength control of a 1.3um microcavity by intracavity steam oxidation. In: Semiconductor Science and Technology. 2003 ; Vol. 18, No. 2. pp. L12-L15.
@article{09027b3d498849f6ad5db4bfbf0852b7,
title = "Resonant wavelength control of a 1.3um microcavity by intracavity steam oxidation",
abstract = "We report a multi-wavelength passive filter working in the 1.3 μm range, fabricated by a post-growth technique based on the combined lateral-vertical steam oxidation of AlGaAs layers within a microcavity. Wafers are photolithographically patterned and etched through the top to create mesa structures which are oxidized from both edges, and control of resonant wavelength is achieved through mesa width, thickness and compositional control of intracavity layers to be oxidized, and oxidation conditions. Microreflectivity measurements of the processed devices show that in this wavelength range it is possible using this approach to control the resonant wavelength over a range of about 52 nm.",
keywords = "wavelength tuning, semiconductors, optical microcavity",
author = "R. Macaluso and F. Robert and A.C. Bryce and S. Calvez and M.D. Dawson",
year = "2003",
month = "2",
doi = "10.1088/0268-1242/18/2/102",
language = "English",
volume = "18",
pages = "L12--L15",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
number = "2",

}

Resonant wavelength control of a 1.3um microcavity by intracavity steam oxidation. / Macaluso, R.; Robert, F.; Bryce, A.C.; Calvez, S.; Dawson, M.D.

In: Semiconductor Science and Technology, Vol. 18, No. 2, 02.2003, p. L12-L15.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Resonant wavelength control of a 1.3um microcavity by intracavity steam oxidation

AU - Macaluso, R.

AU - Robert, F.

AU - Bryce, A.C.

AU - Calvez, S.

AU - Dawson, M.D.

PY - 2003/2

Y1 - 2003/2

N2 - We report a multi-wavelength passive filter working in the 1.3 μm range, fabricated by a post-growth technique based on the combined lateral-vertical steam oxidation of AlGaAs layers within a microcavity. Wafers are photolithographically patterned and etched through the top to create mesa structures which are oxidized from both edges, and control of resonant wavelength is achieved through mesa width, thickness and compositional control of intracavity layers to be oxidized, and oxidation conditions. Microreflectivity measurements of the processed devices show that in this wavelength range it is possible using this approach to control the resonant wavelength over a range of about 52 nm.

AB - We report a multi-wavelength passive filter working in the 1.3 μm range, fabricated by a post-growth technique based on the combined lateral-vertical steam oxidation of AlGaAs layers within a microcavity. Wafers are photolithographically patterned and etched through the top to create mesa structures which are oxidized from both edges, and control of resonant wavelength is achieved through mesa width, thickness and compositional control of intracavity layers to be oxidized, and oxidation conditions. Microreflectivity measurements of the processed devices show that in this wavelength range it is possible using this approach to control the resonant wavelength over a range of about 52 nm.

KW - wavelength tuning

KW - semiconductors

KW - optical microcavity

UR - http://dx.doi.org/10.1088/0268-1242/18/2/102

U2 - 10.1088/0268-1242/18/2/102

DO - 10.1088/0268-1242/18/2/102

M3 - Article

VL - 18

SP - L12-L15

JO - Semiconductor Science and Technology

T2 - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 2

ER -