Resonant wavelength control of a 1.3um microcavity by intracavity steam oxidation

R. Macaluso, F. Robert, A.C. Bryce, S. Calvez, M.D. Dawson

Research output: Contribution to journalArticlepeer-review


We report a multi-wavelength passive filter working in the 1.3 μm range, fabricated by a post-growth technique based on the combined lateral-vertical steam oxidation of AlGaAs layers within a microcavity. Wafers are photolithographically patterned and etched through the top to create mesa structures which are oxidized from both edges, and control of resonant wavelength is achieved through mesa width, thickness and compositional control of intracavity layers to be oxidized, and oxidation conditions. Microreflectivity measurements of the processed devices show that in this wavelength range it is possible using this approach to control the resonant wavelength over a range of about 52 nm.
Original languageEnglish
Pages (from-to)L12-L15
JournalSemiconductor Science and Technology
Issue number2
Publication statusPublished - Feb 2003


  • wavelength tuning
  • semiconductors
  • optical microcavity

Fingerprint Dive into the research topics of 'Resonant wavelength control of a 1.3um microcavity by intracavity steam oxidation'. Together they form a unique fingerprint.

Cite this