Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime

N. Schulz, M. Rattunde, A.C.S. Manzor, K. Kohler, J. Wagner, J.M. Hopkins, D. Burns

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35mum optimized for resonant optical in-well pumping around 1.95mum. Compared to conventional barrier-pumped devices, the power conversion efficiency is significantly increased.
Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, 2007. CLEO 2007
PublisherIEEE
Pages1-2
Number of pages1
ISBN (Print)9781557528346
DOIs
Publication statusPublished - 11 May 2007

Keywords

  • semiconductors
  • gallium compounds
  • optical pumping
  • surface emitting lasers
  • in-well pumping

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