Abstract
We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35mum optimized for resonant optical in-well pumping around 1.95mum. Compared to conventional barrier-pumped devices, the power conversion efficiency is significantly increased.
Original language | English |
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Title of host publication | Conference on Lasers and Electro-Optics, 2007. CLEO 2007 |
Publisher | IEEE |
Pages | 1-2 |
Number of pages | 1 |
ISBN (Print) | 9781557528346 |
DOIs | |
Publication status | Published - 11 May 2007 |
Keywords
- semiconductors
- gallium compounds
- optical pumping
- surface emitting lasers
- in-well pumping