Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime

N. Schulz, M. Rattunde, A.C.S. Manzor, K. Kohler, J. Wagner, J.M. Hopkins, D. Burns

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35mum optimized for resonant optical in-well pumping around 1.95mum. Compared to conventional barrier-pumped devices, the power conversion efficiency is significantly increased.
Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, 2007. CLEO 2007
PublisherIEEE
Pages1-2
Number of pages1
ISBN (Print)9781557528346
DOIs
Publication statusPublished - 11 May 2007

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lasing
pumping
wavelengths

Keywords

  • semiconductors
  • gallium compounds
  • optical pumping
  • surface emitting lasers
  • in-well pumping

Cite this

Schulz, N., Rattunde, M., Manzor, A. C. S., Kohler, K., Wagner, J., Hopkins, J. M., & Burns, D. (2007). Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime. In Conference on Lasers and Electro-Optics, 2007. CLEO 2007 (pp. 1-2). IEEE. https://doi.org/10.1109/CLEO.2007.4452522
Schulz, N. ; Rattunde, M. ; Manzor, A.C.S. ; Kohler, K. ; Wagner, J. ; Hopkins, J.M. ; Burns, D. / Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime. Conference on Lasers and Electro-Optics, 2007. CLEO 2007. IEEE, 2007. pp. 1-2
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keywords = "semiconductors, gallium compounds, optical pumping, surface emitting lasers, in-well pumping",
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Schulz, N, Rattunde, M, Manzor, ACS, Kohler, K, Wagner, J, Hopkins, JM & Burns, D 2007, Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime. in Conference on Lasers and Electro-Optics, 2007. CLEO 2007. IEEE, pp. 1-2. https://doi.org/10.1109/CLEO.2007.4452522

Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime. / Schulz, N.; Rattunde, M.; Manzor, A.C.S.; Kohler, K.; Wagner, J.; Hopkins, J.M.; Burns, D.

Conference on Lasers and Electro-Optics, 2007. CLEO 2007. IEEE, 2007. p. 1-2.

Research output: Chapter in Book/Report/Conference proceedingChapter

TY - CHAP

T1 - Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime

AU - Schulz, N.

AU - Rattunde, M.

AU - Manzor, A.C.S.

AU - Kohler, K.

AU - Wagner, J.

AU - Hopkins, J.M.

AU - Burns, D.

PY - 2007/5/11

Y1 - 2007/5/11

N2 - We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35mum optimized for resonant optical in-well pumping around 1.95mum. Compared to conventional barrier-pumped devices, the power conversion efficiency is significantly increased.

AB - We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35mum optimized for resonant optical in-well pumping around 1.95mum. Compared to conventional barrier-pumped devices, the power conversion efficiency is significantly increased.

KW - semiconductors

KW - gallium compounds

KW - optical pumping

KW - surface emitting lasers

KW - in-well pumping

UR - http://dx.doi.org/10.1109/CLEO.2007.4452522

U2 - 10.1109/CLEO.2007.4452522

DO - 10.1109/CLEO.2007.4452522

M3 - Chapter

SN - 9781557528346

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EP - 2

BT - Conference on Lasers and Electro-Optics, 2007. CLEO 2007

PB - IEEE

ER -

Schulz N, Rattunde M, Manzor ACS, Kohler K, Wagner J, Hopkins JM et al. Resonant in-Well pumping of GaSb-based VECSELs emitting the 2.Xum wavelength regime. In Conference on Lasers and Electro-Optics, 2007. CLEO 2007. IEEE. 2007. p. 1-2 https://doi.org/10.1109/CLEO.2007.4452522