Resonance raman-spectra of a langmuir-blodgett film of substituted copper phthalocyanine on n-type silicon

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Abstract

Resonance Raman excitation profiles for a substituted phthalocyanine dispersed as a polycrystalline powder in a silver disc were compared with those for a Langmuir-Blodgett (LB) multilayer of the same material on a silicon surface. There is a strong angular dependence of the efficiency of the scattering process. The LB profiles are strongly influenced by the electronic fields from the smooth semiconducting silicon surface, which gives rise to increased -* energy separation and comparatively efficient scattering from upper vibronic states.
Original languageEnglish
Pages (from-to)31-34
Number of pages3
JournalJournal of Raman Spectroscopy
Volume20
Issue number1
DOIs
Publication statusPublished - Jan 1989

Keywords

  • resonance raman-spectra
  • langmuir-blodgett film
  • copper phthalocyanine
  • n-type silicon

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