Resistance to cracking of a stretchable semiconductor: speed of crack propagation for varying energy release rate

S. Liu, H. C. Lim, Qu Min, J. F. Federici, G. A. Thomas, H. Gleskova, S. Wagner

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

We have measured and calculated the propagation velocity of successive cracks in a single sample of amorphous SiNx as a function of energy release rate. We have obtained the conditions for controlled, repetitive crack formation by using a Substrate of compliant plastic that survives the cracking of a thin film formed on it. We have recorded the crack velocity curves using high-speed micro-photography using dark field illumination. Under uniform, uniaxial tensile strain, the films crack in an array of essentially straight, parallel lines, if the increase of the strain density is slow. We find reasonable agreement in the comparison of theory and experiment and find a linear relationship between the initial velocity and energy release rate threshold. Consequently, in cases where the theoretical agreement with the data is reasonable, the successive cracks show velocity curves that scale with each other.
LanguageEnglish
Title of host publicationThin films - stresses and mechanical properties X
EditorsS. G. Corcoran, Y. C. Joo, N. R. Moody, Z. Suo
Place of PublicationWarrendale
Pages173-178
Number of pages6
Volume795
Publication statusPublished - 2004
EventSymposium on Thin Films - Stresses and Mechanical Properties X held at the 2003 MRS Fall Meeting - Boston, United States
Duration: 1 Dec 20035 Dec 2003

Publication series

NameMRS Symposium Proceedings
PublisherMaterials Research Society
Volume795

Conference

ConferenceSymposium on Thin Films - Stresses and Mechanical Properties X held at the 2003 MRS Fall Meeting
CountryUnited States
CityBoston
Period1/12/035/12/03

Fingerprint

crack propagation
cracks
energy
propagation velocity
crack initiation
photography
curves
plastics
illumination
high speed
thresholds
thin films

Keywords

  • thin films
  • patterns
  • resistance
  • cracking
  • stretchable semiconductor
  • speed
  • crack propagation
  • energy release rate

Cite this

Liu, S., Lim, H. C., Min, Q., Federici, J. F., Thomas, G. A., Gleskova, H., & Wagner, S. (2004). Resistance to cracking of a stretchable semiconductor: speed of crack propagation for varying energy release rate. In S. G. Corcoran, Y. C. Joo, N. R. Moody, & Z. Suo (Eds.), Thin films - stresses and mechanical properties X (Vol. 795, pp. 173-178 ). (MRS Symposium Proceedings; Vol. 795). Warrendale.
Liu, S. ; Lim, H. C. ; Min, Qu ; Federici, J. F. ; Thomas, G. A. ; Gleskova, H. ; Wagner, S. / Resistance to cracking of a stretchable semiconductor : speed of crack propagation for varying energy release rate. Thin films - stresses and mechanical properties X. editor / S. G. Corcoran ; Y. C. Joo ; N. R. Moody ; Z. Suo. Vol. 795 Warrendale, 2004. pp. 173-178 (MRS Symposium Proceedings).
@inproceedings{70259daa8ae7482d9ab8db673e14eca3,
title = "Resistance to cracking of a stretchable semiconductor: speed of crack propagation for varying energy release rate",
abstract = "We have measured and calculated the propagation velocity of successive cracks in a single sample of amorphous SiNx as a function of energy release rate. We have obtained the conditions for controlled, repetitive crack formation by using a Substrate of compliant plastic that survives the cracking of a thin film formed on it. We have recorded the crack velocity curves using high-speed micro-photography using dark field illumination. Under uniform, uniaxial tensile strain, the films crack in an array of essentially straight, parallel lines, if the increase of the strain density is slow. We find reasonable agreement in the comparison of theory and experiment and find a linear relationship between the initial velocity and energy release rate threshold. Consequently, in cases where the theoretical agreement with the data is reasonable, the successive cracks show velocity curves that scale with each other.",
keywords = "thin films, patterns, resistance, cracking, stretchable semiconductor, speed, crack propagation , energy release rate",
author = "S. Liu and Lim, {H. C.} and Qu Min and Federici, {J. F.} and Thomas, {G. A.} and H. Gleskova and S. Wagner",
year = "2004",
language = "English",
isbn = "1558997334",
volume = "795",
series = "MRS Symposium Proceedings",
publisher = "Materials Research Society",
pages = "173--178",
editor = "Corcoran, {S. G.} and Joo, {Y. C.} and Moody, {N. R.} and Z. Suo",
booktitle = "Thin films - stresses and mechanical properties X",

}

Liu, S, Lim, HC, Min, Q, Federici, JF, Thomas, GA, Gleskova, H & Wagner, S 2004, Resistance to cracking of a stretchable semiconductor: speed of crack propagation for varying energy release rate. in SG Corcoran, YC Joo, NR Moody & Z Suo (eds), Thin films - stresses and mechanical properties X. vol. 795, MRS Symposium Proceedings, vol. 795, Warrendale, pp. 173-178 , Symposium on Thin Films - Stresses and Mechanical Properties X held at the 2003 MRS Fall Meeting , Boston, United States, 1/12/03.

Resistance to cracking of a stretchable semiconductor : speed of crack propagation for varying energy release rate. / Liu, S.; Lim, H. C.; Min, Qu; Federici, J. F.; Thomas, G. A.; Gleskova, H.; Wagner, S.

Thin films - stresses and mechanical properties X. ed. / S. G. Corcoran; Y. C. Joo; N. R. Moody; Z. Suo. Vol. 795 Warrendale, 2004. p. 173-178 (MRS Symposium Proceedings; Vol. 795).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - Resistance to cracking of a stretchable semiconductor

T2 - speed of crack propagation for varying energy release rate

AU - Liu, S.

AU - Lim, H. C.

AU - Min, Qu

AU - Federici, J. F.

AU - Thomas, G. A.

AU - Gleskova, H.

AU - Wagner, S.

PY - 2004

Y1 - 2004

N2 - We have measured and calculated the propagation velocity of successive cracks in a single sample of amorphous SiNx as a function of energy release rate. We have obtained the conditions for controlled, repetitive crack formation by using a Substrate of compliant plastic that survives the cracking of a thin film formed on it. We have recorded the crack velocity curves using high-speed micro-photography using dark field illumination. Under uniform, uniaxial tensile strain, the films crack in an array of essentially straight, parallel lines, if the increase of the strain density is slow. We find reasonable agreement in the comparison of theory and experiment and find a linear relationship between the initial velocity and energy release rate threshold. Consequently, in cases where the theoretical agreement with the data is reasonable, the successive cracks show velocity curves that scale with each other.

AB - We have measured and calculated the propagation velocity of successive cracks in a single sample of amorphous SiNx as a function of energy release rate. We have obtained the conditions for controlled, repetitive crack formation by using a Substrate of compliant plastic that survives the cracking of a thin film formed on it. We have recorded the crack velocity curves using high-speed micro-photography using dark field illumination. Under uniform, uniaxial tensile strain, the films crack in an array of essentially straight, parallel lines, if the increase of the strain density is slow. We find reasonable agreement in the comparison of theory and experiment and find a linear relationship between the initial velocity and energy release rate threshold. Consequently, in cases where the theoretical agreement with the data is reasonable, the successive cracks show velocity curves that scale with each other.

KW - thin films

KW - patterns

KW - resistance

KW - cracking

KW - stretchable semiconductor

KW - speed

KW - crack propagation

KW - energy release rate

M3 - Conference contribution book

SN - 1558997334

VL - 795

T3 - MRS Symposium Proceedings

SP - 173

EP - 178

BT - Thin films - stresses and mechanical properties X

A2 - Corcoran, S. G.

A2 - Joo, Y. C.

A2 - Moody, N. R.

A2 - Suo, Z.

CY - Warrendale

ER -

Liu S, Lim HC, Min Q, Federici JF, Thomas GA, Gleskova H et al. Resistance to cracking of a stretchable semiconductor: speed of crack propagation for varying energy release rate. In Corcoran SG, Joo YC, Moody NR, Suo Z, editors, Thin films - stresses and mechanical properties X. Vol. 795. Warrendale. 2004. p. 173-178 . (MRS Symposium Proceedings).