Reprint of: Electron channelling contrast imaging for III-nitride thin film structures

G. Naresh-Kumar; D. Thomson; M. Nouf-Allehiani; J. Bruckbauer; P. R. Edwards; B. Hourahine; R. W. Martin; C. Trager-Cowan

doi:10.1016/j.mssp.2016.09.025

Reprint of: Electron channelling contrast imaging for III-nitride thin film structures

G. Naresh-Kumar^*, D. Thomson, M. Nouf-Allehiani, J. Bruckbauer, P. R. Edwards, B. Hourahine, R. W. Martin, C. Trager-Cowan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI, especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed.

Original language	English
Pages (from-to)	19-25
Number of pages	7
Journal	Materials Science in Semiconductor Processing
Volume	55
Early online date	4 Oct 2016
DOIs	https://doi.org/10.1016/j.mssp.2016.09.025
Publication status	Published - 15 Nov 2016

Funding

We would like to thank all our growth colleagues for providing samples for our ECCI characterisation work at the University of Strathclyde. Special thanks to Prof. Peter Parbrook, University College Cork, Ireland, Dr Rachel Oliver, University of Cambridge, Dr Trevor Martin, IQE, UK and Dr Christof Mauder and Prof. Michael Heuken, Aixtron SE, Germany for providing variety of GaN samples. We are grateful to Prof. Tao Wang, University of Sheffield for providing semipolar GaN thin films. We would also like to thank Dr M. A. di Forte-Poisson and Dr Piero Gamarra, Thales Research and Technology, France for providing HEMT structures and Prof. Nicolas Grandjean, EPFL, Switzerland for providing DBR structures. This work was supported by the EU Project no. PITN-GA-2008-213238 (RAINBOW). Financial support is also acknowledged from the Engineering and Physical Sciences Research Council (EPSRC), UK via Grant Nos. EP/J015792/1 “Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC” and EP/M015181/1, “Manufacturing nano-GaN”. The data presented in this review article is available at http://dx.doi.org/10.15129/b9e0ba43-2a2e-4ffa-a842-1d743a1d3175 or from the corresponding author.

Keywords

ECCI
extended defects
III-nitrides
SEM and thin films

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10.1016/j.mssp.2016.09.025Licence: CC BY 4.0

Naresh-Kumar-etal-MSSP-2016-Reprint-of-Electron-channelling-contrast-imaging-for-III-nitrideFinal published version, 917 KBLicence: CC BY 4.0

Cite this

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title = "Reprint of: Electron channelling contrast imaging for III-nitride thin film structures",

abstract = "Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI, especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed.",

keywords = "ECCI, extended defects, III-nitrides, SEM and thin films",

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Reprint of: Electron channelling contrast imaging for III-nitride thin film structures

Abstract

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Keywords

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Manufacturing of nano-engineered III-nitride semiconductors

Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.

Electron channelling contrast and cathodoluminescence images obtained from III-nitride layer structures

Cite this

Reprint of: Electron channelling contrast imaging for III-nitride thin film structures

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Projects

Manufacturing of nano-engineered III-nitride semiconductors

Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.

Datasets

Electron channelling contrast and cathodoluminescence images obtained from III-nitride layer structures

Cite this