Report on the evening rump session on InN - July 21, 2004 at the 2004 international workshop on nitride semiconductors

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

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Abstract

The following is a report on the Evening Rump Session on InN held as part of the 2004 International Workshop on Nitride Semiconductors. It summarises (1) the presentations given by the 5 panellists covering data generated from theory and a wide range of experimental techniques relating to the properties of InN, in particular its bandgap and (2) the subsequent discussion. The most recent parameter-free electronic-structure calculations predict a value for the InN bandgap of 0.8 +/- 0.4 eV; experimental results obtained from a wide range of InN samples point to a bandgap around 0.7 eV, or to a bandgap around 1.3 eV. The interpretation of available data is hotly contested, not surprisingly a definitive conclusion on the true value of the bandgap of InN was not reached during the Rump Session. It was agreed that InN is a difficult material to grow and its properties vary depending on how and where it is grown. However with mobilities of order 4000 cm(2)/Vs, high saturation velocities and the absorption wavelengths of InGaN spanning the visible, InN is a material with huge potential.
LanguageEnglish
Title of host publicationPhysica status solidi C - conferences and critical reviews
EditorsM Stutzmann
Place of PublicationWeinheim
Pages2240-2245
Number of pages5
DOIs
Publication statusPublished - 2005
EventInternational Workshop on Nitrides Semiconductors (IWN 2004) - Pittsburgh, United States
Duration: 19 Jul 200423 Jul 2004

Publication series

NamePhysica status solidi c - current topics in solid state physics
PublisherWiley
No.7
Volume2
ISSN (Print)1610-1634

Conference

ConferenceInternational Workshop on Nitrides Semiconductors (IWN 2004)
CountryUnited States
CityPittsburgh
Period19/07/0423/07/04

Fingerprint

evening
nitrides
coverings
electronic structure
saturation
wavelengths

Keywords

  • molecular-beam epitaxy
  • optical-properties
  • energy-gap
  • alloys
  • growth
  • absorption
  • films

Cite this

Trager-Cowan, C. (2005). Report on the evening rump session on InN - July 21, 2004 at the 2004 international workshop on nitride semiconductors. In M. Stutzmann (Ed.), Physica status solidi C - conferences and critical reviews (pp. 2240-2245). (Physica status solidi c - current topics in solid state physics; Vol. 2, No. 7). Weinheim. https://doi.org/10.1002/pssc.200461614
Trager-Cowan, Carol. / Report on the evening rump session on InN - July 21, 2004 at the 2004 international workshop on nitride semiconductors. Physica status solidi C - conferences and critical reviews. editor / M Stutzmann. Weinheim, 2005. pp. 2240-2245 (Physica status solidi c - current topics in solid state physics; 7).
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title = "Report on the evening rump session on InN - July 21, 2004 at the 2004 international workshop on nitride semiconductors",
abstract = "The following is a report on the Evening Rump Session on InN held as part of the 2004 International Workshop on Nitride Semiconductors. It summarises (1) the presentations given by the 5 panellists covering data generated from theory and a wide range of experimental techniques relating to the properties of InN, in particular its bandgap and (2) the subsequent discussion. The most recent parameter-free electronic-structure calculations predict a value for the InN bandgap of 0.8 +/- 0.4 eV; experimental results obtained from a wide range of InN samples point to a bandgap around 0.7 eV, or to a bandgap around 1.3 eV. The interpretation of available data is hotly contested, not surprisingly a definitive conclusion on the true value of the bandgap of InN was not reached during the Rump Session. It was agreed that InN is a difficult material to grow and its properties vary depending on how and where it is grown. However with mobilities of order 4000 cm(2)/Vs, high saturation velocities and the absorption wavelengths of InGaN spanning the visible, InN is a material with huge potential.",
keywords = "molecular-beam epitaxy, optical-properties, energy-gap, alloys, growth, absorption, films",
author = "Carol Trager-Cowan",
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Trager-Cowan, C 2005, Report on the evening rump session on InN - July 21, 2004 at the 2004 international workshop on nitride semiconductors. in M Stutzmann (ed.), Physica status solidi C - conferences and critical reviews. Physica status solidi c - current topics in solid state physics, no. 7, vol. 2, Weinheim, pp. 2240-2245, International Workshop on Nitrides Semiconductors (IWN 2004), Pittsburgh, United States, 19/07/04. https://doi.org/10.1002/pssc.200461614

Report on the evening rump session on InN - July 21, 2004 at the 2004 international workshop on nitride semiconductors. / Trager-Cowan, Carol.

Physica status solidi C - conferences and critical reviews. ed. / M Stutzmann. Weinheim, 2005. p. 2240-2245 (Physica status solidi c - current topics in solid state physics; Vol. 2, No. 7).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

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T1 - Report on the evening rump session on InN - July 21, 2004 at the 2004 international workshop on nitride semiconductors

AU - Trager-Cowan, Carol

PY - 2005

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N2 - The following is a report on the Evening Rump Session on InN held as part of the 2004 International Workshop on Nitride Semiconductors. It summarises (1) the presentations given by the 5 panellists covering data generated from theory and a wide range of experimental techniques relating to the properties of InN, in particular its bandgap and (2) the subsequent discussion. The most recent parameter-free electronic-structure calculations predict a value for the InN bandgap of 0.8 +/- 0.4 eV; experimental results obtained from a wide range of InN samples point to a bandgap around 0.7 eV, or to a bandgap around 1.3 eV. The interpretation of available data is hotly contested, not surprisingly a definitive conclusion on the true value of the bandgap of InN was not reached during the Rump Session. It was agreed that InN is a difficult material to grow and its properties vary depending on how and where it is grown. However with mobilities of order 4000 cm(2)/Vs, high saturation velocities and the absorption wavelengths of InGaN spanning the visible, InN is a material with huge potential.

AB - The following is a report on the Evening Rump Session on InN held as part of the 2004 International Workshop on Nitride Semiconductors. It summarises (1) the presentations given by the 5 panellists covering data generated from theory and a wide range of experimental techniques relating to the properties of InN, in particular its bandgap and (2) the subsequent discussion. The most recent parameter-free electronic-structure calculations predict a value for the InN bandgap of 0.8 +/- 0.4 eV; experimental results obtained from a wide range of InN samples point to a bandgap around 0.7 eV, or to a bandgap around 1.3 eV. The interpretation of available data is hotly contested, not surprisingly a definitive conclusion on the true value of the bandgap of InN was not reached during the Rump Session. It was agreed that InN is a difficult material to grow and its properties vary depending on how and where it is grown. However with mobilities of order 4000 cm(2)/Vs, high saturation velocities and the absorption wavelengths of InGaN spanning the visible, InN is a material with huge potential.

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Trager-Cowan C. Report on the evening rump session on InN - July 21, 2004 at the 2004 international workshop on nitride semiconductors. In Stutzmann M, editor, Physica status solidi C - conferences and critical reviews. Weinheim. 2005. p. 2240-2245. (Physica status solidi c - current topics in solid state physics; 7). https://doi.org/10.1002/pssc.200461614