Report on the evening rump session on InN - July 21, 2004 at the 2004 international workshop on nitride semiconductors

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The following is a report on the Evening Rump Session on InN held as part of the 2004 International Workshop on Nitride Semiconductors. It summarises (1) the presentations given by the 5 panellists covering data generated from theory and a wide range of experimental techniques relating to the properties of InN, in particular its bandgap and (2) the subsequent discussion. The most recent parameter-free electronic-structure calculations predict a value for the InN bandgap of 0.8 +/- 0.4 eV; experimental results obtained from a wide range of InN samples point to a bandgap around 0.7 eV, or to a bandgap around 1.3 eV. The interpretation of available data is hotly contested, not surprisingly a definitive conclusion on the true value of the bandgap of InN was not reached during the Rump Session. It was agreed that InN is a difficult material to grow and its properties vary depending on how and where it is grown. However with mobilities of order 4000 cm(2)/Vs, high saturation velocities and the absorption wavelengths of InGaN spanning the visible, InN is a material with huge potential.
Original languageEnglish
Title of host publicationPhysica status solidi C - conferences and critical reviews
EditorsM Stutzmann
Place of PublicationWeinheim
Number of pages5
Publication statusPublished - 2005
EventInternational Workshop on Nitrides Semiconductors (IWN 2004) - Pittsburgh, United States
Duration: 19 Jul 200423 Jul 2004

Publication series

NamePhysica status solidi c - current topics in solid state physics
ISSN (Print)1610-1634


ConferenceInternational Workshop on Nitrides Semiconductors (IWN 2004)
CountryUnited States


  • molecular-beam epitaxy
  • optical-properties
  • energy-gap
  • alloys
  • growth
  • absorption
  • films

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