The following is a report on the Evening Rump Session on InN held as part of the 2004 International Workshop on Nitride Semiconductors. It summarises (1) the presentations given by the 5 panellists covering data generated from theory and a wide range of experimental techniques relating to the properties of InN, in particular its bandgap and (2) the subsequent discussion. The most recent parameter-free electronic-structure calculations predict a value for the InN bandgap of 0.8 +/- 0.4 eV; experimental results obtained from a wide range of InN samples point to a bandgap around 0.7 eV, or to a bandgap around 1.3 eV. The interpretation of available data is hotly contested, not surprisingly a definitive conclusion on the true value of the bandgap of InN was not reached during the Rump Session. It was agreed that InN is a difficult material to grow and its properties vary depending on how and where it is grown. However with mobilities of order 4000 cm(2)/Vs, high saturation velocities and the absorption wavelengths of InGaN spanning the visible, InN is a material with huge potential.
|Name||Physica status solidi c - current topics in solid state physics|
|Conference||International Workshop on Nitrides Semiconductors (IWN 2004)|
|Period||19/07/04 → 23/07/04|
- molecular-beam epitaxy