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Relaxation dynamics of spin-3/2 silicon vacancies in 4H-SiC
A. J. Ramsay,
A. Rossi
Physics
Research output
:
Contribution to journal
›
Article
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peer-review
7
Citations (Scopus)
34
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Dive into the research topics of 'Relaxation dynamics of spin-3/2 silicon vacancies in 4H-SiC'. Together they form a unique fingerprint.
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Physics
Deviation
20%
Differences
20%
Frequencies
40%
Magnetic Resonance
20%
Microwave
20%
Ratios
20%
Relaxation Time
20%
Room Temperature
20%
Silicon
100%
Spin
100%
Value
20%
Chemistry
Ambient Reaction Temperature
20%
Dipole
60%
Magnetic Resonance
20%
Microwave
20%
Purity
20%
Quadrupole
40%
Relaxation
100%
Thr-Asp
60%
Time
20%
Material Science
Silicon
100%
Temperature
20%
Vacancy
100%