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Relaxation dynamics of spin-3/2 silicon vacancies in 4H-SiC
A. J. Ramsay,
A. Rossi
Physics
Research output
:
Contribution to journal
›
Article
›
peer-review
7
Citations (Scopus)
34
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Dive into the research topics of 'Relaxation dynamics of spin-3/2 silicon vacancies in 4H-SiC'. Together they form a unique fingerprint.
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Physics
Silicon
100%
Spin
100%
Frequencies
40%
Ratios
20%
Deviation
20%
Room Temperature
20%
Differences
20%
Magnetic Resonance
20%
Microwave
20%
Relaxation Time
20%
Value
20%
Chemistry
Relaxation
100%
Dipole
60%
Thr-Asp
60%
Quadrupole
40%
Ambient Reaction Temperature
20%
Microwave
20%
Magnetic Resonance
20%
Purity
20%
Time
20%
Material Science
Silicon
100%
Vacancy
100%
Temperature
20%