Recovery kinetics of phosphorus ion-implanted a-Si:H

J. Nakata, S. Wagner, Helena Gleskova, P. A. Stolk, J. M. Poate

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

This chapter looks at recovery kinetics of phosphorus ion-implanted a-Si:H
LanguageEnglish
Title of host publicationAmorphous silicon technology - 1996
Subtitle of host publicationvolume 420 - MRS proceedings
EditorsM. Hack, A. Matsuda, E. A. Schiff, R. Schropp, S. Wagner
Place of PublicationWarrendale, PA
Pages653-658
Number of pages6
Volume420
Publication statusPublished - 31 Dec 1996
EventMRS Spring Meeting 1996 - San Francisco, United States
Duration: 8 Apr 199612 Apr 1996

Publication series

NameMRS Symposium Proceedings
PublisherMaterials Research Society
Volume420

Conference

ConferenceMRS Spring Meeting 1996
CountryUnited States
CitySan Francisco
Period8/04/9612/04/96

Fingerprint

Phosphorus
Kinetics
Recovery

Keywords

  • recovery kinetics
  • phosphorus
  • ion-implanted

Cite this

Nakata, J., Wagner, S., Gleskova, H., Stolk, P. A., & Poate, J. M. (1996). Recovery kinetics of phosphorus ion-implanted a-Si:H. In M. Hack, A. Matsuda, E. A. Schiff, R. Schropp, & S. Wagner (Eds.), Amorphous silicon technology - 1996: volume 420 - MRS proceedings (Vol. 420, pp. 653-658). (MRS Symposium Proceedings; Vol. 420). Warrendale, PA.
Nakata, J. ; Wagner, S. ; Gleskova, Helena ; Stolk, P. A. ; Poate, J. M. / Recovery kinetics of phosphorus ion-implanted a-Si:H. Amorphous silicon technology - 1996: volume 420 - MRS proceedings. editor / M. Hack ; A. Matsuda ; E. A. Schiff ; R. Schropp ; S. Wagner. Vol. 420 Warrendale, PA, 1996. pp. 653-658 (MRS Symposium Proceedings).
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Nakata, J, Wagner, S, Gleskova, H, Stolk, PA & Poate, JM 1996, Recovery kinetics of phosphorus ion-implanted a-Si:H. in M Hack, A Matsuda, EA Schiff, R Schropp & S Wagner (eds), Amorphous silicon technology - 1996: volume 420 - MRS proceedings. vol. 420, MRS Symposium Proceedings, vol. 420, Warrendale, PA, pp. 653-658, MRS Spring Meeting 1996, San Francisco, United States, 8/04/96.

Recovery kinetics of phosphorus ion-implanted a-Si:H. / Nakata, J.; Wagner, S.; Gleskova, Helena; Stolk, P. A.; Poate, J. M.

Amorphous silicon technology - 1996: volume 420 - MRS proceedings. ed. / M. Hack; A. Matsuda; E. A. Schiff; R. Schropp; S. Wagner. Vol. 420 Warrendale, PA, 1996. p. 653-658 (MRS Symposium Proceedings; Vol. 420).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

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A2 - Matsuda, A.

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Nakata J, Wagner S, Gleskova H, Stolk PA, Poate JM. Recovery kinetics of phosphorus ion-implanted a-Si:H. In Hack M, Matsuda A, Schiff EA, Schropp R, Wagner S, editors, Amorphous silicon technology - 1996: volume 420 - MRS proceedings. Vol. 420. Warrendale, PA. 1996. p. 653-658. (MRS Symposium Proceedings).