Recovery kinetics of phosphorus ion-implanted a-Si:H

J. Nakata, S. Wagner, Helena Gleskova, P. A. Stolk, J. M. Poate

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

This chapter looks at recovery kinetics of phosphorus ion-implanted a-Si:H
Original languageEnglish
Title of host publicationAmorphous silicon technology - 1996
Subtitle of host publicationvolume 420 - MRS proceedings
EditorsM. Hack, A. Matsuda, E. A. Schiff, R. Schropp, S. Wagner
Place of PublicationWarrendale, PA
Pages653-658
Number of pages6
Volume420
Publication statusPublished - 31 Dec 1996
EventMRS Spring Meeting 1996 - San Francisco, United States
Duration: 8 Apr 199612 Apr 1996

Publication series

NameMRS Symposium Proceedings
PublisherMaterials Research Society
Volume420

Conference

ConferenceMRS Spring Meeting 1996
CountryUnited States
CitySan Francisco
Period8/04/9612/04/96

Keywords

  • recovery kinetics
  • phosphorus
  • ion-implanted

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