Recent developments in high-power short-wave mid-infrared semiconductor disk lasers

D. Burns, J.M. Hopkins, A.J. Kemp, B. Rosener, N. Schulz, C. Manz, K. Kohler, M. Rattunde, J. Wagner

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Many applications exist for high performance lasers in the short-wave, mid-infrared spectral regime between 1.9 and 2.5μm - from long-range communications systems through to remote atmospheric gas sensing and pollution monitoring. However, a simple, efficient laser source offering the desired performance characteristics and flexibility has not been available. In the last few years considerable progress has been made in the development of optically-pumped (AlGaIn)(AsSb) quantum well semiconductor disk lasers emitting in the 2.Xμm mid-infrared spectral region - continuous-wave and pulsed-pumped output power levels now exceed 6W and 16W respectively. Furthermore, singlefrequency operation with linewidths <4MHz and broad tunability of up to 170nm have also been demonstrated, all at near-diffraction-limited beam quality. Such performance metrics are only possible through the very best materials growth, a sound understanding of the design principles of these highly multi-layered devices and, importantly, the application of effective thermal management.
LanguageEnglish
Article number719311
JournalProceedings of SPIE: The International Society for Optical Engineering
Volume7193
DOIs
Publication statusPublished - 25 Jan 2009

Fingerprint

Videodisks
Mid-infrared
High Power
Semiconductors
Semiconductor materials
Laser
Infrared radiation
Beam quality
Lasers
Temperature control
pollution monitoring
Linewidth
Semiconductor quantum wells
lasers
Thermal Management
Communication systems
Pollution
Beam Quality
Diffraction
Gases

Keywords

  • semiconductor disc laser
  • thermal management

Cite this

Burns, D. ; Hopkins, J.M. ; Kemp, A.J. ; Rosener, B. ; Schulz, N. ; Manz, C. ; Kohler, K. ; Rattunde, M. ; Wagner, J. / Recent developments in high-power short-wave mid-infrared semiconductor disk lasers. In: Proceedings of SPIE: The International Society for Optical Engineering. 2009 ; Vol. 7193.
@article{b197051040ff4bdba79fa5e9fe4b8afb,
title = "Recent developments in high-power short-wave mid-infrared semiconductor disk lasers",
abstract = "Many applications exist for high performance lasers in the short-wave, mid-infrared spectral regime between 1.9 and 2.5μm - from long-range communications systems through to remote atmospheric gas sensing and pollution monitoring. However, a simple, efficient laser source offering the desired performance characteristics and flexibility has not been available. In the last few years considerable progress has been made in the development of optically-pumped (AlGaIn)(AsSb) quantum well semiconductor disk lasers emitting in the 2.Xμm mid-infrared spectral region - continuous-wave and pulsed-pumped output power levels now exceed 6W and 16W respectively. Furthermore, singlefrequency operation with linewidths <4MHz and broad tunability of up to 170nm have also been demonstrated, all at near-diffraction-limited beam quality. Such performance metrics are only possible through the very best materials growth, a sound understanding of the design principles of these highly multi-layered devices and, importantly, the application of effective thermal management.",
keywords = "semiconductor disc laser, thermal management",
author = "D. Burns and J.M. Hopkins and A.J. Kemp and B. Rosener and N. Schulz and C. Manz and K. Kohler and M. Rattunde and J. Wagner",
year = "2009",
month = "1",
day = "25",
doi = "10.1117/12.811977",
language = "English",
volume = "7193",
journal = "Proceedings of SPIE",
issn = "0277-786X",

}

Recent developments in high-power short-wave mid-infrared semiconductor disk lasers. / Burns, D.; Hopkins, J.M.; Kemp, A.J.; Rosener, B.; Schulz, N.; Manz, C.; Kohler, K.; Rattunde, M.; Wagner, J.

In: Proceedings of SPIE: The International Society for Optical Engineering, Vol. 7193, 719311, 25.01.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Recent developments in high-power short-wave mid-infrared semiconductor disk lasers

AU - Burns, D.

AU - Hopkins, J.M.

AU - Kemp, A.J.

AU - Rosener, B.

AU - Schulz, N.

AU - Manz, C.

AU - Kohler, K.

AU - Rattunde, M.

AU - Wagner, J.

PY - 2009/1/25

Y1 - 2009/1/25

N2 - Many applications exist for high performance lasers in the short-wave, mid-infrared spectral regime between 1.9 and 2.5μm - from long-range communications systems through to remote atmospheric gas sensing and pollution monitoring. However, a simple, efficient laser source offering the desired performance characteristics and flexibility has not been available. In the last few years considerable progress has been made in the development of optically-pumped (AlGaIn)(AsSb) quantum well semiconductor disk lasers emitting in the 2.Xμm mid-infrared spectral region - continuous-wave and pulsed-pumped output power levels now exceed 6W and 16W respectively. Furthermore, singlefrequency operation with linewidths <4MHz and broad tunability of up to 170nm have also been demonstrated, all at near-diffraction-limited beam quality. Such performance metrics are only possible through the very best materials growth, a sound understanding of the design principles of these highly multi-layered devices and, importantly, the application of effective thermal management.

AB - Many applications exist for high performance lasers in the short-wave, mid-infrared spectral regime between 1.9 and 2.5μm - from long-range communications systems through to remote atmospheric gas sensing and pollution monitoring. However, a simple, efficient laser source offering the desired performance characteristics and flexibility has not been available. In the last few years considerable progress has been made in the development of optically-pumped (AlGaIn)(AsSb) quantum well semiconductor disk lasers emitting in the 2.Xμm mid-infrared spectral region - continuous-wave and pulsed-pumped output power levels now exceed 6W and 16W respectively. Furthermore, singlefrequency operation with linewidths <4MHz and broad tunability of up to 170nm have also been demonstrated, all at near-diffraction-limited beam quality. Such performance metrics are only possible through the very best materials growth, a sound understanding of the design principles of these highly multi-layered devices and, importantly, the application of effective thermal management.

KW - semiconductor disc laser

KW - thermal management

U2 - 10.1117/12.811977

DO - 10.1117/12.811977

M3 - Article

VL - 7193

JO - Proceedings of SPIE

T2 - Proceedings of SPIE

JF - Proceedings of SPIE

SN - 0277-786X

M1 - 719311

ER -